SG65090A1 - Dry etching method of metal oxide/photoresist film laminate - Google Patents
Dry etching method of metal oxide/photoresist film laminateInfo
- Publication number
- SG65090A1 SG65090A1 SG1998002914A SG1998002914A SG65090A1 SG 65090 A1 SG65090 A1 SG 65090A1 SG 1998002914 A SG1998002914 A SG 1998002914A SG 1998002914 A SG1998002914 A SG 1998002914A SG 65090 A1 SG65090 A1 SG 65090A1
- Authority
- SG
- Singapore
- Prior art keywords
- metal oxide
- dry etching
- photoresist film
- etching method
- film laminate
- Prior art date
Links
- 238000001312 dry etching Methods 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21475497 | 1997-08-08 | ||
JP28070097 | 1997-10-14 | ||
JP30460297 | 1997-11-06 | ||
JP7981998 | 1998-03-26 | ||
JP14809298 | 1998-05-28 | ||
JP15734298 | 1998-06-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG65090A1 true SG65090A1 (en) | 1999-05-25 |
Family
ID=27551465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1998002914A SG65090A1 (en) | 1997-08-08 | 1998-08-06 | Dry etching method of metal oxide/photoresist film laminate |
Country Status (6)
Country | Link |
---|---|
US (1) | US20010008227A1 (ko) |
EP (1) | EP0896373A3 (ko) |
KR (1) | KR100319343B1 (ko) |
CN (1) | CN1213708A (ko) |
ID (1) | ID20684A (ko) |
SG (1) | SG65090A1 (ko) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6692903B2 (en) * | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
JP4032916B2 (ja) * | 2001-11-28 | 2008-01-16 | 三菱化学株式会社 | エッチング液 |
US20070062647A1 (en) * | 2005-09-19 | 2007-03-22 | Bailey Joel B | Method and apparatus for isolative substrate edge area processing |
US7067995B2 (en) * | 2003-01-15 | 2006-06-27 | Luminator, Llc | LED lighting system |
US20050176191A1 (en) * | 2003-02-04 | 2005-08-11 | Applied Materials, Inc. | Method for fabricating a notched gate structure of a field effect transistor |
JP4558284B2 (ja) * | 2003-06-27 | 2010-10-06 | 東京エレクトロン株式会社 | プラズマ発生方法、クリーニング方法、基板処理方法、およびプラズマ発生装置 |
FR2876863B1 (fr) * | 2004-10-19 | 2007-01-12 | Saint Gobain | Dispositif de gravure d'une couche conductrice et procede de gravure |
KR100641553B1 (ko) * | 2004-12-23 | 2006-11-01 | 동부일렉트로닉스 주식회사 | 반도체 소자에서 패턴 형성 방법 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
US20080009127A1 (en) | 2006-07-04 | 2008-01-10 | Hynix Semiconductor Inc. | Method of removing photoresist |
KR100780660B1 (ko) | 2006-07-04 | 2007-11-30 | 주식회사 하이닉스반도체 | 높은 도즈의 이온주입배리어로 사용된 감광막의 스트립방법 |
JP4999400B2 (ja) * | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
KR20080034598A (ko) * | 2006-10-17 | 2008-04-22 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR101303578B1 (ko) * | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
MX2010008075A (es) * | 2008-01-23 | 2010-08-04 | Solvay Fluor Gmbh | Proceso para la fabricacion de celulas solares. |
JP5724157B2 (ja) * | 2009-04-13 | 2015-05-27 | 日立金属株式会社 | 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 |
US20110088718A1 (en) * | 2009-10-16 | 2011-04-21 | Matheson Tri-Gas, Inc. | Chamber cleaning methods using fluorine containing cleaning compounds |
KR102254619B1 (ko) * | 2013-11-15 | 2021-05-24 | 삼성디스플레이 주식회사 | 표시 기판 및 그의 제조 방법 |
JP6210039B2 (ja) | 2014-09-24 | 2017-10-11 | セントラル硝子株式会社 | 付着物の除去方法及びドライエッチング方法 |
US10460984B2 (en) * | 2015-04-15 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
US9824893B1 (en) | 2016-06-28 | 2017-11-21 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
KR20180093798A (ko) | 2017-02-13 | 2018-08-22 | 램 리써치 코포레이션 | 에어 갭들을 생성하는 방법 |
US10546748B2 (en) * | 2017-02-17 | 2020-01-28 | Lam Research Corporation | Tin oxide films in semiconductor device manufacturing |
CN111771264A (zh) * | 2018-01-30 | 2020-10-13 | 朗姆研究公司 | 在图案化中的氧化锡心轴 |
CN111886689A (zh) | 2018-03-19 | 2020-11-03 | 朗姆研究公司 | 无倒角通孔集成方案 |
US20190385828A1 (en) * | 2018-06-19 | 2019-12-19 | Lam Research Corporation | Temperature control systems and methods for removing metal oxide films |
KR102643106B1 (ko) | 2019-06-27 | 2024-02-29 | 램 리써치 코포레이션 | 교번하는 에칭 및 패시베이션 프로세스 |
US20220004105A1 (en) * | 2020-07-01 | 2022-01-06 | Applied Materials, Inc. | Dry develop process of photoresist |
US20230393325A1 (en) * | 2022-06-01 | 2023-12-07 | Phosio Corporation | Metal oxide films and uv-curable precursor solutions for deposition of metal oxide films |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4708766A (en) * | 1986-11-07 | 1987-11-24 | Texas Instruments Incorporated | Hydrogen iodide etch of tin oxide |
JPH05251400A (ja) * | 1992-03-09 | 1993-09-28 | Nisshin Hightech Kk | Itoのドライエッチング方法 |
JPH08218185A (ja) * | 1995-02-10 | 1996-08-27 | Tanaka Kikinzoku Kogyo Kk | チタニウム及びチタニウム合金の白金めっき前処理用粗面化エッチング液並びに白金めっき前処理用粗面化エッチング方法 |
JPH08319586A (ja) * | 1995-05-24 | 1996-12-03 | Nec Yamagata Ltd | 真空処理装置のクリーニング方法 |
JPH09205236A (ja) * | 1996-01-24 | 1997-08-05 | Citizen Watch Co Ltd | 薄膜ダイオード及びその製造方法 |
-
1998
- 1998-08-04 US US09/128,787 patent/US20010008227A1/en not_active Abandoned
- 1998-08-06 EP EP98306294A patent/EP0896373A3/en not_active Withdrawn
- 1998-08-06 SG SG1998002914A patent/SG65090A1/en unknown
- 1998-08-08 CN CN98117918A patent/CN1213708A/zh active Pending
- 1998-08-08 KR KR1019980032270A patent/KR100319343B1/ko not_active IP Right Cessation
- 1998-08-10 ID IDP981112A patent/ID20684A/id unknown
Also Published As
Publication number | Publication date |
---|---|
CN1213708A (zh) | 1999-04-14 |
KR100319343B1 (ko) | 2002-02-19 |
EP0896373A2 (en) | 1999-02-10 |
US20010008227A1 (en) | 2001-07-19 |
ID20684A (id) | 1999-02-11 |
EP0896373A3 (en) | 2001-01-17 |
KR19990023468A (ko) | 1999-03-25 |
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