SG63839A1 - Antiparallel pinned spin valve with read signal symmetry - Google Patents

Antiparallel pinned spin valve with read signal symmetry

Info

Publication number
SG63839A1
SG63839A1 SG1998000791A SG1998000791A SG63839A1 SG 63839 A1 SG63839 A1 SG 63839A1 SG 1998000791 A SG1998000791 A SG 1998000791A SG 1998000791 A SG1998000791 A SG 1998000791A SG 63839 A1 SG63839 A1 SG 63839A1
Authority
SG
Singapore
Prior art keywords
read signal
spin valve
pinned spin
signal symmetry
antiparallel pinned
Prior art date
Application number
SG1998000791A
Other languages
English (en)
Inventor
Hardayal Singh Gill
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG63839A1 publication Critical patent/SG63839A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/60—Fluid-dynamic spacing of heads from record-carriers
    • G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
    • G11B5/6082—Design of the air bearing surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/002—Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/001—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
    • G11B2005/0013—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation
    • G11B2005/0016—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers
    • G11B2005/0018—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers by current biasing control or regulation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
SG1998000791A 1997-04-29 1998-04-27 Antiparallel pinned spin valve with read signal symmetry SG63839A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/841,182 US5828529A (en) 1997-04-29 1997-04-29 Antiparallel pinned spin valve with read signal symmetry

Publications (1)

Publication Number Publication Date
SG63839A1 true SG63839A1 (en) 1999-03-30

Family

ID=25284243

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000791A SG63839A1 (en) 1997-04-29 1998-04-27 Antiparallel pinned spin valve with read signal symmetry

Country Status (4)

Country Link
US (1) US5828529A (ko)
JP (1) JPH117614A (ko)
KR (1) KR100291274B1 (ko)
SG (1) SG63839A1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909345A (en) * 1996-02-22 1999-06-01 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
EP0905802B1 (en) * 1997-09-29 2004-11-24 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, magnetoresistance head and method for producing magnetoresistance effect device
US5903415A (en) * 1997-12-11 1999-05-11 International Business Machines Corporation AP pinned spin valve sensor with pinning layer reset and ESD protection
JPH11296823A (ja) * 1998-04-09 1999-10-29 Nec Corp 磁気抵抗効果素子およびその製造方法、ならびに磁気抵抗効果センサ，磁気記録システム
US6191926B1 (en) * 1998-05-07 2001-02-20 Seagate Technology Llc Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer
JP2000003501A (ja) * 1998-06-12 2000-01-07 Sony Corp 磁気信号再生装置及び磁気信号再生方法
JP3234814B2 (ja) * 1998-06-30 2001-12-04 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置
DE19934009B4 (de) 1998-07-21 2006-11-23 Alps Electric Co., Ltd. Magnetowiderstands-Dünnschichtelement vom Drehventil-Typ
US6052263A (en) * 1998-08-21 2000-04-18 International Business Machines Corporation Low moment/high coercivity pinned layer for magnetic tunnel junction sensors
US6185079B1 (en) * 1998-11-09 2001-02-06 International Business Machines Corporation Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor
JP3212567B2 (ja) * 1999-01-27 2001-09-25 アルプス電気株式会社 磁気抵抗効果型薄膜磁気素子を備えた薄膜磁気ヘッドおよびその製造方法
US6351355B1 (en) * 1999-02-09 2002-02-26 Read-Rite Corporation Spin valve device with improved thermal stability
JP2000285413A (ja) * 1999-03-26 2000-10-13 Fujitsu Ltd スピンバルブ磁気抵抗効果型素子とその製造法、及びこの素子を用いた磁気ヘッド
JP3286263B2 (ja) 1999-05-11 2002-05-27 アルプス電気株式会社 薄膜磁気ヘッド
US6208492B1 (en) * 1999-05-13 2001-03-27 International Business Machines Corporation Seed layer structure for spin valve sensor
US6226159B1 (en) 1999-06-25 2001-05-01 International Business Machines Corporation Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors
US6219209B1 (en) 1999-07-29 2001-04-17 International Business Machines Corporation Spin valve head with multiple antiparallel coupling layers
JP3363410B2 (ja) 1999-08-12 2003-01-08 ティーディーケイ株式会社 磁気変換素子および薄膜磁気ヘッド
WO2001024170A1 (fr) 1999-09-29 2001-04-05 Fujitsu Limited Tete a effet de resistance magnetique et dispositif de reproduction d'informations
US6456465B1 (en) 1999-11-09 2002-09-24 Read-Rite Corporation Vertical giant magnetoresistance sensor using a recessed shield
US6519117B1 (en) 1999-12-06 2003-02-11 International Business Machines Corporation Dual AP pinned GMR head with offset layer
US6411477B1 (en) 2000-02-08 2002-06-25 International Business Machines Corporation Antiparallel pinned spin valve read head with improved magnetoresistance and biasing
US6396669B1 (en) 2000-02-08 2002-05-28 International Business Machines Corporation AP pinned PtMn spin valve read head biased for playback symmetry and magnetic stability
US6594123B1 (en) 2000-02-08 2003-07-15 International Business Machines Corporation AP pinned spin valve read head with a negative ferromagnetic field biased for zero asymmetry
US6515838B1 (en) 2000-06-06 2003-02-04 International Business Machines Corporation Biasing correction for simple GMR head
US6560078B1 (en) 2000-07-13 2003-05-06 International Business Machines Corporation Bilayer seed layer for spin valves
JP3971551B2 (ja) 2000-07-19 2007-09-05 Ｔｄｋ株式会社 磁気変換素子および薄膜磁気ヘッド
US6714389B1 (en) * 2000-11-01 2004-03-30 Seagate Technology Llc Digital magnetoresistive sensor with bias
US6738237B2 (en) 2001-01-04 2004-05-18 Hitachi Global Storage Technologies Netherlands B.V. AP-pinned spin valve design using very thin Pt-Mn AFM layer
US6674616B2 (en) 2001-04-09 2004-01-06 Hitachi Global Storage Technologies Netherlands B.V. Spin valve sensor with a biasing layer ecerting a demagnetizing field on a free layer structure
US6735060B2 (en) * 2001-06-20 2004-05-11 International Business Machines Corporation Spin valve sensor with a metal and metal oxide cap layer structure
JP4573736B2 (ja) * 2005-08-31 2010-11-04 三菱電機株式会社 磁界検出装置
JP4296180B2 (ja) * 2006-02-17 2009-07-15 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，磁気再生装置，および磁気抵抗素子の製造方法
JP2008243920A (ja) * 2007-03-26 2008-10-09 Toshiba Corp 磁気抵抗効果再生素子、磁気ヘッド、および磁気再生装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
US5666248A (en) * 1996-09-13 1997-09-09 International Business Machines Corporation Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields

Also Published As

Publication number Publication date
KR100291274B1 (ko) 2001-06-01
JPH117614A (ja) 1999-01-12
KR19980079613A (ko) 1998-11-25
US5828529A (en) 1998-10-27

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