SG63815A1 - Method for depositing golden titanium nitride - Google Patents

Method for depositing golden titanium nitride

Info

Publication number
SG63815A1
SG63815A1 SG1998000421A SG1998000421A SG63815A1 SG 63815 A1 SG63815 A1 SG 63815A1 SG 1998000421 A SG1998000421 A SG 1998000421A SG 1998000421 A SG1998000421 A SG 1998000421A SG 63815 A1 SG63815 A1 SG 63815A1
Authority
SG
Singapore
Prior art keywords
titanium nitride
golden titanium
depositing
depositing golden
nitride
Prior art date
Application number
SG1998000421A
Other languages
English (en)
Inventor
Kenny King-Tai Ngan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG63815A1 publication Critical patent/SG63815A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG1998000421A 1997-02-26 1998-02-25 Method for depositing golden titanium nitride SG63815A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/805,181 US5919342A (en) 1997-02-26 1997-02-26 Method for depositing golden titanium nitride

Publications (1)

Publication Number Publication Date
SG63815A1 true SG63815A1 (en) 1999-03-30

Family

ID=25190867

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000421A SG63815A1 (en) 1997-02-26 1998-02-25 Method for depositing golden titanium nitride

Country Status (6)

Country Link
US (1) US5919342A (ja)
EP (1) EP0861920A1 (ja)
JP (1) JPH10298748A (ja)
KR (1) KR19980071720A (ja)
SG (1) SG63815A1 (ja)
TW (1) TW370569B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627056B2 (en) 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
US6463873B1 (en) * 2000-04-04 2002-10-15 Plasma Quest Limited High density plasmas
US7678705B2 (en) * 2001-07-05 2010-03-16 Tegal Corporation Plasma semiconductor processing system and method
CN100560787C (zh) * 2002-02-27 2009-11-18 亨利J·拉莫斯 在磁化的片等离子体源中在金属衬底上形成氮化钛薄膜
TWI295729B (en) * 2005-11-01 2008-04-11 Univ Nat Yunlin Sci & Tech Preparation of a ph sensor, the prepared ph sensor, systems comprising the same, and measurement using the systems
US8888965B2 (en) * 2007-11-30 2014-11-18 Anna University—Chennai Non-stoichiometric titanium nitride films
KR102069192B1 (ko) * 2013-02-08 2020-01-23 삼성디스플레이 주식회사 나노 결정 형성 방법 및 나노 결정의 형성된 박막을 포함한 유기 발광 표시 장치의 제조 방법
JP7318565B2 (ja) * 2020-03-03 2023-08-01 信越化学工業株式会社 反射型マスクブランクの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1954366C2 (de) * 1969-10-29 1972-02-03 Heraeus Gmbh W C Verfahren und Vorrichtung zur Herstellung von harten UEberzuegen aus Titan- und/oder Tantalverbindungen
JPS58153776A (ja) * 1982-03-05 1983-09-12 Citizen Watch Co Ltd 装飾部品の製造方法およびそれに用いるイオンプレ−テイング装置
JPS61190070A (ja) * 1985-02-20 1986-08-23 Hitachi Ltd スパツタ装置
JPS63152463A (ja) * 1986-12-13 1988-06-24 豊田合成株式会社 顕色繊維物
DE69102851T2 (de) * 1990-10-09 1995-02-16 Nec Corp Verfahren zur Herstellung eines Ti/TiN/Al Kontaktes unter Benutzung eines reaktiven Zerstäubungsprozesses.

Also Published As

Publication number Publication date
KR19980071720A (ko) 1998-10-26
US5919342A (en) 1999-07-06
JPH10298748A (ja) 1998-11-10
EP0861920A1 (en) 1998-09-02
TW370569B (en) 1999-09-21

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