SG63690G - Process for fabricating a device - Google Patents

Process for fabricating a device

Info

Publication number
SG63690G
SG63690G SG63690A SG63690A SG63690G SG 63690 G SG63690 G SG 63690G SG 63690 A SG63690 A SG 63690A SG 63690 A SG63690 A SG 63690A SG 63690 G SG63690 G SG 63690G
Authority
SG
Singapore
Prior art keywords
fabricating
Prior art date
Application number
SG63690A
Other languages
English (en)
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of SG63690G publication Critical patent/SG63690G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
SG63690A 1984-12-18 1990-08-01 Process for fabricating a device SG63690G (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68277684A 1984-12-18 1984-12-18
PCT/US1985/002392 WO1986003887A2 (fr) 1984-12-18 1985-12-04 Procede de fabrication d'un dispositif

Publications (1)

Publication Number Publication Date
SG63690G true SG63690G (en) 1990-09-07

Family

ID=24741091

Family Applications (1)

Application Number Title Priority Date Filing Date
SG63690A SG63690G (en) 1984-12-18 1990-08-01 Process for fabricating a device

Country Status (9)

Country Link
EP (1) EP0205557B1 (fr)
JP (1) JP2868764B2 (fr)
KR (1) KR950000859B1 (fr)
CA (1) CA1278768C (fr)
DE (1) DE3577020D1 (fr)
ES (1) ES8705704A1 (fr)
IE (1) IE57062B1 (fr)
SG (1) SG63690G (fr)
WO (1) WO1986003887A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3629422C2 (de) * 1986-08-29 1994-02-17 Agfa Gevaert Ag Verfahren und Vorrichtung zum Einstellen von Belichtungsgrößen an einem Kopiergerät
US5089083A (en) * 1989-04-25 1992-02-18 Tokyo Electron Limited Plasma etching method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4427516A (en) * 1981-08-24 1984-01-24 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
US4397724A (en) * 1981-08-24 1983-08-09 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers

Also Published As

Publication number Publication date
ES550034A0 (es) 1987-05-16
EP0205557A1 (fr) 1986-12-30
CA1278768C (fr) 1991-01-08
KR880700453A (ko) 1988-03-15
KR950000859B1 (ko) 1995-02-02
WO1986003887A2 (fr) 1986-07-03
JPS62501183A (ja) 1987-05-07
JP2868764B2 (ja) 1999-03-10
ES8705704A1 (es) 1987-05-16
IE57062B1 (en) 1992-04-08
EP0205557B1 (fr) 1990-04-04
WO1986003887A3 (fr) 1986-08-14
IE853193L (en) 1986-06-18
DE3577020D1 (de) 1990-05-10

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