SG60093G - A method of making ohmic low resistance w-sb contacts to iii-v semiconductor materials - Google Patents
A method of making ohmic low resistance w-sb contacts to iii-v semiconductor materialsInfo
- Publication number
- SG60093G SG60093G SG60093A SG60093A SG60093G SG 60093 G SG60093 G SG 60093G SG 60093 A SG60093 A SG 60093A SG 60093 A SG60093 A SG 60093A SG 60093 G SG60093 G SG 60093G
- Authority
- SG
- Singapore
- Prior art keywords
- contacts
- iii
- low resistance
- semiconductor materials
- making ohmic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/478,875 US5011792A (en) | 1990-02-12 | 1990-02-12 | Method of making ohmic resistance WSb, contacts to III-V semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
SG60093G true SG60093G (en) | 1993-07-09 |
Family
ID=23901726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG60093A SG60093G (en) | 1990-02-12 | 1993-05-07 | A method of making ohmic low resistance w-sb contacts to iii-v semiconductor materials |
Country Status (6)
Country | Link |
---|---|
US (1) | US5011792A (xx) |
EP (1) | EP0442203B1 (xx) |
JP (1) | JP2898423B2 (xx) |
DE (1) | DE69001016T2 (xx) |
HK (1) | HK117693A (xx) |
SG (1) | SG60093G (xx) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6632292B1 (en) * | 1998-03-13 | 2003-10-14 | Semitool, Inc. | Selective treatment of microelectronic workpiece surfaces |
JP3654037B2 (ja) | 1999-03-25 | 2005-06-02 | 住友電気工業株式会社 | オーミック電極とその製造方法、および半導体装置 |
JP7271166B2 (ja) * | 2018-12-21 | 2023-05-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL92060C (xx) * | 1953-10-26 | |||
US3768151A (en) * | 1970-11-03 | 1973-10-30 | Ibm | Method of forming ohmic contacts to semiconductors |
JPS567304B2 (xx) * | 1972-08-28 | 1981-02-17 | ||
US4186410A (en) * | 1978-06-27 | 1980-01-29 | Bell Telephone Laboratories, Incorporated | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
CA1138795A (en) * | 1980-02-19 | 1983-01-04 | Goodrich (B.F.) Company (The) | Escape slide and life raft |
US4361718A (en) * | 1980-12-19 | 1982-11-30 | E. I. Du Pont De Nemours And Company | Silicon solar cell N-region metallizations comprising a nickel-antimony alloy |
JPS586143A (ja) * | 1981-07-02 | 1983-01-13 | Matsushita Electronics Corp | 半導体装置 |
US4523212A (en) * | 1982-03-12 | 1985-06-11 | The United States Of America As Represented By The Secretary Of The Air Force | Simultaneous doped layers for semiconductor devices |
JPS61111525A (ja) * | 1984-11-06 | 1986-05-29 | Nec Corp | 半導体素子の電極形成方法 |
JPH071813B2 (ja) * | 1985-05-31 | 1995-01-11 | 古河電気工業株式会社 | 半導体発光装置の製造方法 |
US4662060A (en) * | 1985-12-13 | 1987-05-05 | Allied Corporation | Method of fabricating semiconductor device having low resistance non-alloyed contact layer |
US4662063A (en) * | 1986-01-28 | 1987-05-05 | The United States Of America As Represented By The Department Of The Navy | Generation of ohmic contacts on indium phosphide |
WO1988000392A1 (en) * | 1986-06-24 | 1988-01-14 | American Telephone & Telegraph Company | Method for fabricating devices in iii-v semiconductor substrates and devices formed thereby |
US4850357A (en) * | 1988-01-12 | 1989-07-25 | Cardiac Pacemakers, Inc. | Biphasic pulse generator for an implantable defibrillator |
JPH01261204A (ja) * | 1988-04-11 | 1989-10-18 | Fujikura Ltd | 酸化物系超電導体の製造方法 |
-
1990
- 1990-02-12 US US07/478,875 patent/US5011792A/en not_active Expired - Lifetime
- 1990-12-07 EP EP90313330A patent/EP0442203B1/en not_active Expired - Lifetime
- 1990-12-07 DE DE9090313330T patent/DE69001016T2/de not_active Expired - Fee Related
-
1991
- 1991-02-05 JP JP3035199A patent/JP2898423B2/ja not_active Expired - Lifetime
-
1993
- 1993-05-07 SG SG60093A patent/SG60093G/en unknown
- 1993-10-28 HK HK1176/93A patent/HK117693A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2898423B2 (ja) | 1999-06-02 |
HK117693A (en) | 1993-11-05 |
EP0442203B1 (en) | 1993-03-03 |
EP0442203A1 (en) | 1991-08-21 |
JPH04357827A (ja) | 1992-12-10 |
DE69001016T2 (de) | 1993-07-15 |
US5011792A (en) | 1991-04-30 |
DE69001016D1 (de) | 1993-04-08 |
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