DE69001016D1 - Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien. - Google Patents

Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien.

Info

Publication number
DE69001016D1
DE69001016D1 DE9090313330T DE69001016T DE69001016D1 DE 69001016 D1 DE69001016 D1 DE 69001016D1 DE 9090313330 T DE9090313330 T DE 9090313330T DE 69001016 T DE69001016 T DE 69001016T DE 69001016 D1 DE69001016 D1 DE 69001016D1
Authority
DE
Germany
Prior art keywords
antimone
iii
low resistance
semiconductor materials
ohmic contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE9090313330T
Other languages
English (en)
Other versions
DE69001016T2 (de
Inventor
Ranjan Dutta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of DE69001016D1 publication Critical patent/DE69001016D1/de
Application granted granted Critical
Publication of DE69001016T2 publication Critical patent/DE69001016T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE9090313330T 1990-02-12 1990-12-07 Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien. Expired - Fee Related DE69001016T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/478,875 US5011792A (en) 1990-02-12 1990-02-12 Method of making ohmic resistance WSb, contacts to III-V semiconductor materials

Publications (2)

Publication Number Publication Date
DE69001016D1 true DE69001016D1 (de) 1993-04-08
DE69001016T2 DE69001016T2 (de) 1993-07-15

Family

ID=23901726

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9090313330T Expired - Fee Related DE69001016T2 (de) 1990-02-12 1990-12-07 Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien.

Country Status (6)

Country Link
US (1) US5011792A (de)
EP (1) EP0442203B1 (de)
JP (1) JP2898423B2 (de)
DE (1) DE69001016T2 (de)
HK (1) HK117693A (de)
SG (1) SG60093G (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632292B1 (en) * 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
JP3654037B2 (ja) * 1999-03-25 2005-06-02 住友電気工業株式会社 オーミック電極とその製造方法、および半導体装置
JP7271166B2 (ja) * 2018-12-21 2023-05-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL191674A (de) * 1953-10-26
US3768151A (en) * 1970-11-03 1973-10-30 Ibm Method of forming ohmic contacts to semiconductors
JPS567304B2 (de) * 1972-08-28 1981-02-17
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
CA1138795A (en) * 1980-02-19 1983-01-04 Goodrich (B.F.) Company (The) Escape slide and life raft
US4361718A (en) * 1980-12-19 1982-11-30 E. I. Du Pont De Nemours And Company Silicon solar cell N-region metallizations comprising a nickel-antimony alloy
JPS586143A (ja) * 1981-07-02 1983-01-13 Matsushita Electronics Corp 半導体装置
US4523212A (en) * 1982-03-12 1985-06-11 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous doped layers for semiconductor devices
JPS61111525A (ja) * 1984-11-06 1986-05-29 Nec Corp 半導体素子の電極形成方法
JPH071813B2 (ja) * 1985-05-31 1995-01-11 古河電気工業株式会社 半導体発光装置の製造方法
US4662060A (en) * 1985-12-13 1987-05-05 Allied Corporation Method of fabricating semiconductor device having low resistance non-alloyed contact layer
US4662063A (en) * 1986-01-28 1987-05-05 The United States Of America As Represented By The Department Of The Navy Generation of ohmic contacts on indium phosphide
EP0272303A1 (de) * 1986-06-24 1988-06-29 AT&T Corp. Herstellungsverfahren von halbleiteranordnungen auf iii-v-halbleitersubstraten und hergestellte anordnungen
US4850357A (en) * 1988-01-12 1989-07-25 Cardiac Pacemakers, Inc. Biphasic pulse generator for an implantable defibrillator
JPH01261204A (ja) * 1988-04-11 1989-10-18 Fujikura Ltd 酸化物系超電導体の製造方法

Also Published As

Publication number Publication date
EP0442203B1 (de) 1993-03-03
JPH04357827A (ja) 1992-12-10
SG60093G (en) 1993-07-09
EP0442203A1 (de) 1991-08-21
DE69001016T2 (de) 1993-07-15
JP2898423B2 (ja) 1999-06-02
HK117693A (en) 1993-11-05
US5011792A (en) 1991-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee