SG55398A1 - Thermal processor for semiconductor wafers - Google Patents

Thermal processor for semiconductor wafers

Info

Publication number
SG55398A1
SG55398A1 SG1997003852A SG1997003852A SG55398A1 SG 55398 A1 SG55398 A1 SG 55398A1 SG 1997003852 A SG1997003852 A SG 1997003852A SG 1997003852 A SG1997003852 A SG 1997003852A SG 55398 A1 SG55398 A1 SG 55398A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafers
thermal processor
processor
thermal
wafers
Prior art date
Application number
SG1997003852A
Other languages
English (en)
Inventor
Mario Ghezzo
Timothy Dietrich Page
Thomas Bert Gorczyca
Rolf Sverre Bergman
Himanshu Bachubhai Vakil
Charles Samuel Huey
Seth David Silverstein
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SG55398A1 publication Critical patent/SG55398A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
SG1997003852A 1996-11-04 1997-10-23 Thermal processor for semiconductor wafers SG55398A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/743,587 US6067931A (en) 1996-11-04 1996-11-04 Thermal processor for semiconductor wafers

Publications (1)

Publication Number Publication Date
SG55398A1 true SG55398A1 (en) 1998-12-21

Family

ID=24989354

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003852A SG55398A1 (en) 1996-11-04 1997-10-23 Thermal processor for semiconductor wafers

Country Status (9)

Country Link
US (1) US6067931A (de)
EP (1) EP0840359A3 (de)
JP (1) JPH10256171A (de)
KR (1) KR19980041866A (de)
CA (1) CA2216464A1 (de)
IL (1) IL122034A (de)
RU (1) RU2185682C2 (de)
SG (1) SG55398A1 (de)
TW (1) TW457594B (de)

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US6291868B1 (en) 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
US6666924B1 (en) * 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
DE10045264A1 (de) * 2000-09-13 2002-03-21 Zeiss Carl Verfahren zum Aufheizen eines Werkstückes, insbesondere eines optischen Elementes
DE10051125A1 (de) 2000-10-16 2002-05-02 Steag Rtp Systems Gmbh Vorrichtung zum thermischen Behandeln von Substraten
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US6600138B2 (en) 2001-04-17 2003-07-29 Mattson Technology, Inc. Rapid thermal processing system for integrated circuits
US6707011B2 (en) 2001-04-17 2004-03-16 Mattson Technology, Inc. Rapid thermal processing system for integrated circuits
KR100429296B1 (ko) * 2002-09-09 2004-04-29 한국전자통신연구원 반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조방법
US6815241B2 (en) * 2002-09-25 2004-11-09 Cao Group, Inc. GaN structures having low dislocation density and methods of manufacture
KR20040042238A (ko) * 2002-11-13 2004-05-20 주식회사 실트론 실리콘 웨이퍼의 산화막 형성 장치 및 실리콘 웨이퍼의산화막 형성 방법
US7115837B2 (en) * 2003-07-28 2006-10-03 Mattson Technology, Inc. Selective reflectivity process chamber with customized wavelength response and method
TWI224868B (en) * 2003-10-07 2004-12-01 Ind Tech Res Inst Method of forming poly-silicon thin film transistor
US7037612B2 (en) * 2003-11-26 2006-05-02 Utc Fuel Cells, Llc Moisture stabilization for a fuel cell power plant system
DE102004038233A1 (de) * 2004-08-05 2006-03-16 Schott Ag Solarabsorber
JP4852852B2 (ja) * 2005-02-17 2012-01-11 ウシオ電機株式会社 加熱ユニット
DE102005038672A1 (de) * 2005-08-16 2007-02-22 Mattson Thermal Products Gmbh Vorrichtung zum thermischen Behandeln von Halbleitersubstraten
US20070148367A1 (en) * 2005-12-22 2007-06-28 Lewis Daniel J Chemical vapor deposition apparatus and methods of using the apparatus
KR20100139092A (ko) * 2008-03-26 2010-12-31 지티 솔라 인코퍼레이티드 금-코팅된 폴리실리콘 반응기 시스템 및 방법
US20120237695A1 (en) * 2009-12-23 2012-09-20 2-Pye Solar, LLC Method and apparatus for depositing a thin film
US20120244684A1 (en) * 2011-03-24 2012-09-27 Kunihiko Suzuki Film-forming apparatus and method
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US20160379854A1 (en) * 2015-06-29 2016-12-29 Varian Semiconductor Equipment Associates, Inc. Vacuum Compatible LED Substrate Heater
FR3044023B1 (fr) * 2015-11-19 2017-12-22 Herakles Dispositif pour le revetement d'un ou plusieurs fils par un procede de depot en phase vapeur

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US3372672A (en) * 1966-03-21 1968-03-12 Gen Electric Photopolymerization means in a vapor deposition coating apparatus
DE1924997A1 (de) * 1969-05-16 1970-11-19 Siemens Ag Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US4160929A (en) * 1977-03-25 1979-07-10 Duro-Test Corporation Incandescent light source with transparent heat mirror
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US4435445A (en) * 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
JPS5994829A (ja) * 1982-11-22 1984-05-31 Nec Corp 半導体装置の製造方法
JPS6074425A (ja) * 1983-09-29 1985-04-26 Nec Corp 基板加熱装置
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS611017A (ja) * 1984-06-13 1986-01-07 Kokusai Electric Co Ltd 半導体基板の熱処理装置
JPS61129834A (ja) * 1984-11-28 1986-06-17 Dainippon Screen Mfg Co Ltd 光照射型熱処理装置
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4654509A (en) * 1985-10-07 1987-03-31 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus
US4938815A (en) * 1986-10-15 1990-07-03 Advantage Production Technology, Inc. Semiconductor substrate heater and reactor process and apparatus
JPH0474859A (ja) * 1990-07-18 1992-03-10 Shibuya Kogyo Co Ltd 熱処理装置の加熱装置
DE4026728C2 (de) * 1990-08-24 2001-05-17 Dornier Gmbh Verwendung von beschichteten transparenten Sichtscheiben aus Kunststoff
JPH0729844A (ja) * 1993-07-14 1995-01-31 Fujitsu Ltd 半導体基板の赤外線加熱方法及び赤外線加熱装置
JPH07245374A (ja) * 1994-03-03 1995-09-19 Mitsui High Tec Inc リ−ドフレ−ム及び半導体装置
US5433791A (en) * 1994-05-26 1995-07-18 Hughes Aircraft Company MBE apparatus with photo-cracker cell
JPH0897167A (ja) * 1994-09-28 1996-04-12 Tokyo Electron Ltd 処理装置及び熱処理装置
US5715361A (en) * 1995-04-13 1998-02-03 Cvc Products, Inc. Rapid thermal processing high-performance multizone illuminator for wafer backside heating
US5636320A (en) * 1995-05-26 1997-06-03 International Business Machines Corporation Sealed chamber with heating lamps provided within transparent tubes
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Also Published As

Publication number Publication date
US6067931A (en) 2000-05-30
CA2216464A1 (en) 1998-05-04
IL122034A (en) 2001-05-20
TW457594B (en) 2001-10-01
MX9708509A (es) 1998-05-31
RU2185682C2 (ru) 2002-07-20
EP0840359A3 (de) 2002-04-03
EP0840359A2 (de) 1998-05-06
KR19980041866A (ko) 1998-08-17
IL122034A0 (en) 1998-03-10
JPH10256171A (ja) 1998-09-25

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