MX9708509A - Procesador termico para plaquitas semiconductoras. - Google Patents

Procesador termico para plaquitas semiconductoras.

Info

Publication number
MX9708509A
MX9708509A MX9708509A MX9708509A MX9708509A MX 9708509 A MX9708509 A MX 9708509A MX 9708509 A MX9708509 A MX 9708509A MX 9708509 A MX9708509 A MX 9708509A MX 9708509 A MX9708509 A MX 9708509A
Authority
MX
Mexico
Prior art keywords
reactor chamber
coating
semiconductor wafer
thermal processor
nanometers
Prior art date
Application number
MX9708509A
Other languages
English (en)
Other versions
MXPA97008509A (es
Inventor
Mario Ghezzo
Timothy Dietrich Page
Thomas Ber Gorczyca
Rolf Sverre Bergman
Himanshu Bachubhai Vakil
Charles Samuel Huey
Seth David Silverstein
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of MX9708509A publication Critical patent/MX9708509A/es
Publication of MXPA97008509A publication Critical patent/MXPA97008509A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)

Abstract

Un procesador térmico para por lo menos una plaquita semiconductora que incluye una cámara de reactor que tiene un material substancialmente transparente a la luz que incluye una longitud de onda dentro de la escala de aproximadamente 200 nanometros hasta aproximadamente 800 nanometros para sostener por lo menos una plaquita semiconductora. Un recubrimiento que incluye un material substancialmente reflejante de radiacion infrarroja puede estar presente sobre por lo menos una porcion de la cámara de reactor. Una fuente de luz proporciona energía radiante hacia por lo menos una plaquita semiconductora a través del recubrimiento y la cámara de reactor. La fuente de luz puede incluir una lámpara de descarga ultravioleta, una lámpara incandescente infrarroja de halogeno o, una lámpara de descarga visible de haluro metálico. El recubrimiento puede esta situado sobre una superficie interna o externa de la cámara de reactor. Si la cámara de reactor tiene paredes internas y externas, el recubrimiento puede estar colocada sobre la pared interna o la pared externa.
MXPA/A/1997/008509A 1996-11-04 1997-11-04 Procesador termico para plaquitas semiconductoras MXPA97008509A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/743,587 US6067931A (en) 1996-11-04 1996-11-04 Thermal processor for semiconductor wafers
US08743587 1996-11-04

Publications (2)

Publication Number Publication Date
MX9708509A true MX9708509A (es) 1998-05-31
MXPA97008509A MXPA97008509A (es) 1998-10-23

Family

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Also Published As

Publication number Publication date
US6067931A (en) 2000-05-30
IL122034A0 (en) 1998-03-10
KR19980041866A (ko) 1998-08-17
CA2216464A1 (en) 1998-05-04
EP0840359A2 (en) 1998-05-06
JPH10256171A (ja) 1998-09-25
TW457594B (en) 2001-10-01
SG55398A1 (en) 1998-12-21
RU2185682C2 (ru) 2002-07-20
IL122034A (en) 2001-05-20
EP0840359A3 (en) 2002-04-03

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Legal Events

Date Code Title Description
FG Grant or registration
MM Annulment or lapse due to non-payment of fees