SG54526A1 - Memory cell having negative differential resistance devices - Google Patents
Memory cell having negative differential resistance devicesInfo
- Publication number
- SG54526A1 SG54526A1 SG1997002334A SG1997002334A SG54526A1 SG 54526 A1 SG54526 A1 SG 54526A1 SG 1997002334 A SG1997002334 A SG 1997002334A SG 1997002334 A SG1997002334 A SG 1997002334A SG 54526 A1 SG54526 A1 SG 54526A1
- Authority
- SG
- Singapore
- Prior art keywords
- memory cell
- negative differential
- differential resistance
- resistance devices
- devices
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2116596P | 1996-07-01 | 1996-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG54526A1 true SG54526A1 (en) | 1998-11-16 |
Family
ID=21802720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG1997002334A SG54526A1 (en) | 1996-07-01 | 1997-07-01 | Memory cell having negative differential resistance devices |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0817199B1 (ko) |
| JP (1) | JP3884536B2 (ko) |
| KR (1) | KR100450362B1 (ko) |
| DE (1) | DE69717352T2 (ko) |
| SG (1) | SG54526A1 (ko) |
| TW (1) | TW400636B (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003051184A (ja) * | 2001-08-06 | 2003-02-21 | Nec Corp | メモリ装置 |
| US9536886B2 (en) * | 2015-03-02 | 2017-01-03 | Samsung Electronics Co., Ltd. | CMOS compatible resonant interband tunneling cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661454A (ja) * | 1992-08-10 | 1994-03-04 | Hitachi Ltd | 半導体集積回路装置 |
| US5390145A (en) * | 1993-04-15 | 1995-02-14 | Fujitsu Limited | Resonance tunnel diode memory |
-
1997
- 1997-07-01 DE DE69717352T patent/DE69717352T2/de not_active Expired - Lifetime
- 1997-07-01 EP EP97110765A patent/EP0817199B1/en not_active Expired - Lifetime
- 1997-07-01 JP JP21111197A patent/JP3884536B2/ja not_active Expired - Fee Related
- 1997-07-01 SG SG1997002334A patent/SG54526A1/en unknown
- 1997-07-01 KR KR1019970030495A patent/KR100450362B1/ko not_active IP Right Cessation
- 1997-10-06 TW TW086109356A patent/TW400636B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0817199A2 (en) | 1998-01-07 |
| DE69717352T2 (de) | 2003-06-26 |
| EP0817199A3 (en) | 1999-10-13 |
| KR980011423A (ko) | 1998-04-30 |
| KR100450362B1 (ko) | 2004-11-26 |
| DE69717352D1 (de) | 2003-01-09 |
| JP3884536B2 (ja) | 2007-02-21 |
| EP0817199B1 (en) | 2002-11-27 |
| TW400636B (en) | 2000-08-01 |
| JPH1069766A (ja) | 1998-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU5825198A (en) | Differential flash memory cell and method | |
| GB2290163B (en) | Electrochemical cell | |
| IL125126A (en) | Electroconversion cell | |
| GB9520954D0 (en) | Electrochemical cell | |
| EP0681339A3 (de) | Elektrochemische Zelle. | |
| GB2285535B (en) | Electrochemical cell | |
| GB2286285B (en) | Electrochemical cell | |
| GB2321338B (en) | A differential voltage cell | |
| EP0662722A3 (en) | Arrangement of solar cells. | |
| ZA972248B (en) | Flotation cell row | |
| GB2320807B (en) | Flash memory cell | |
| SG54526A1 (en) | Memory cell having negative differential resistance devices | |
| PL319532A1 (en) | Voltaic cell | |
| GB9420735D0 (en) | Reporter cell line | |
| AU1605595A (en) | Bicmos memory cell with current access | |
| EP0769211A4 (en) | SMALL BATTERY CELL | |
| GB9403503D0 (en) | Memory cell | |
| GB9424497D0 (en) | Reporter cell line | |
| GB9601131D0 (en) | Differential voltage cell | |
| GB0100040D0 (en) | A differential voltage cell | |
| GB9425050D0 (en) | Cell line | |
| GB9701054D0 (en) | Differential voltage cell | |
| GB9526212D0 (en) | Electrochemical cell | |
| AUPM995094A0 (en) | Battery memory enervator | |
| SG86315A1 (en) | Stack cell memory device and method of forming the same |