SG54460A1 - Semiconductor integrated circuit device having a leakage current reduction means - Google Patents
Semiconductor integrated circuit device having a leakage current reduction meansInfo
- Publication number
- SG54460A1 SG54460A1 SG1997000216A SG1997000216A SG54460A1 SG 54460 A1 SG54460 A1 SG 54460A1 SG 1997000216 A SG1997000216 A SG 1997000216A SG 1997000216 A SG1997000216 A SG 1997000216A SG 54460 A1 SG54460 A1 SG 54460A1
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuit
- leakage current
- semiconductor integrated
- circuit device
- reduction means
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1007396P | 1996-01-30 | 1996-01-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG54460A1 true SG54460A1 (en) | 1998-11-16 |
Family
ID=21743687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1997000216A SG54460A1 (en) | 1996-01-30 | 1997-01-30 | Semiconductor integrated circuit device having a leakage current reduction means |
Country Status (4)
Country | Link |
---|---|
US (1) | US5703825A (ko) |
KR (1) | KR100471737B1 (ko) |
SG (1) | SG54460A1 (ko) |
TW (1) | TW333698B (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6343045B2 (en) * | 1996-05-24 | 2002-01-29 | Uniram Technology, Inc. | Methods to reduce the effects of leakage current for dynamic circuit elements |
US6127878A (en) * | 1999-01-05 | 2000-10-03 | Siemens Aktiengesellschaft | Driver circuit with negative lower power rail |
US6215349B1 (en) | 1999-01-05 | 2001-04-10 | International Business Machines Corp. | Capacitive coupled driver circuit |
US6529427B1 (en) * | 1999-08-12 | 2003-03-04 | Vanguard International Semiconductor Corporation | Test structures for measuring DRAM cell node junction leakage current |
US6512705B1 (en) * | 2001-11-21 | 2003-01-28 | Micron Technology, Inc. | Method and apparatus for standby power reduction in semiconductor devices |
US6848434B2 (en) * | 2003-03-17 | 2005-02-01 | Cummins, Inc. | System for diagnosing operation of an EGR cooler |
JP4313744B2 (ja) * | 2004-09-06 | 2009-08-12 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
KR100699832B1 (ko) | 2005-01-05 | 2007-03-27 | 삼성전자주식회사 | Mtcmos 제어 회로 |
KR100713907B1 (ko) * | 2005-06-10 | 2007-05-07 | 주식회사 하이닉스반도체 | 반도체 장치의 라인 구동 회로 |
US7151712B1 (en) * | 2005-10-19 | 2006-12-19 | Winbond Electronics Corp. | Row decoder with low gate induce drain leakage current |
KR100801059B1 (ko) * | 2006-08-02 | 2008-02-04 | 삼성전자주식회사 | 누설 전류를 감소시키기 위한 반도체 메모리 장치의드라이버 회로 |
US7671663B2 (en) * | 2006-12-12 | 2010-03-02 | Texas Instruments Incorporated | Tunable voltage controller for a sub-circuit and method of operating the same |
JP2008293604A (ja) * | 2007-05-25 | 2008-12-04 | Elpida Memory Inc | 半導体記憶装置の出力回路、および半導体記憶装置の出力回路のデータ出力方法 |
US7961546B2 (en) * | 2008-02-05 | 2011-06-14 | Texas Instruments Incorporated | Memory power management systems and methods |
KR101020293B1 (ko) * | 2009-02-12 | 2011-03-07 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
TW201407653A (zh) * | 2012-08-03 | 2014-02-16 | Memchip Technology Co Ltd | 電流控制型之電子開關電路 |
US9065433B2 (en) | 2013-01-16 | 2015-06-23 | Freescale Semiconductor, Inc. | Capacitor charging circuit with low sub-threshold transistor leakage current |
TWI563482B (en) * | 2014-10-21 | 2016-12-21 | Ind Tech Res Inst | Driver circuit with device variation compensation and operation method thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02171020A (ja) * | 1988-12-23 | 1990-07-02 | Nec Corp | Mos型信号入力回路 |
US5272676A (en) * | 1990-11-20 | 1993-12-21 | Hitachi, Ltd. | Semiconductor integrated circuit device |
JPH057149A (ja) * | 1991-06-27 | 1993-01-14 | Fujitsu Ltd | 出力回路 |
KR100254134B1 (ko) * | 1991-11-08 | 2000-04-15 | 나시모토 류우조오 | 대기시 전류저감회로를 가진 반도체 집적회로 |
JP3212150B2 (ja) * | 1992-08-07 | 2001-09-25 | 株式会社日立製作所 | 半導体装置 |
US5408144A (en) * | 1993-01-07 | 1995-04-18 | Hitachi, Ltd. | Semiconductor integrated circuits with power reduction mechanism |
JPH06208790A (ja) * | 1993-01-12 | 1994-07-26 | Toshiba Corp | 半導体装置 |
JP3477781B2 (ja) * | 1993-03-23 | 2003-12-10 | セイコーエプソン株式会社 | Icカード |
JPH07105682A (ja) * | 1993-10-06 | 1995-04-21 | Nec Corp | ダイナミックメモリ装置 |
-
1996
- 1996-09-17 TW TW085111362A patent/TW333698B/zh active
-
1997
- 1997-01-13 KR KR1019970000630A patent/KR100471737B1/ko not_active IP Right Cessation
- 1997-01-23 US US08/785,417 patent/US5703825A/en not_active Expired - Lifetime
- 1997-01-30 SG SG1997000216A patent/SG54460A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
US5703825A (en) | 1997-12-30 |
KR970060217A (ko) | 1997-08-12 |
TW333698B (en) | 1998-06-11 |
KR100471737B1 (ko) | 2005-06-27 |
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