SG50496A1 - Method of soldering a sputtering target to a back backing member - Google Patents

Method of soldering a sputtering target to a back backing member

Info

Publication number
SG50496A1
SG50496A1 SG1996002810A SG1996002810A SG50496A1 SG 50496 A1 SG50496 A1 SG 50496A1 SG 1996002810 A SG1996002810 A SG 1996002810A SG 1996002810 A SG1996002810 A SG 1996002810A SG 50496 A1 SG50496 A1 SG 50496A1
Authority
SG
Singapore
Prior art keywords
soldering
sputtering target
backing member
back backing
sputtering
Prior art date
Application number
SG1996002810A
Other languages
English (en)
Inventor
Henry H Heimbrock
Milan Vascak
Purnesh Seegopaul
Anthony Sica
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of SG50496A1 publication Critical patent/SG50496A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/08—Soldering by means of dipping in molten solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
SG1996002810A 1992-07-08 1993-04-21 Method of soldering a sputtering target to a back backing member SG50496A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/910,644 US5230462A (en) 1992-07-08 1992-07-08 Method of soldering a sputtering target to a backing member

Publications (1)

Publication Number Publication Date
SG50496A1 true SG50496A1 (en) 1998-07-20

Family

ID=25429108

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996002810A SG50496A1 (en) 1992-07-08 1993-04-21 Method of soldering a sputtering target to a back backing member

Country Status (9)

Country Link
US (1) US5230462A (zh)
EP (1) EP0650535A1 (zh)
JP (1) JPH07509026A (zh)
KR (1) KR950702647A (zh)
AU (1) AU4108993A (zh)
CA (1) CA2139221A1 (zh)
SG (1) SG50496A1 (zh)
TW (1) TW221038B (zh)
WO (1) WO1994001596A1 (zh)

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US5567512A (en) * 1993-10-08 1996-10-22 Hmt Technology Corporation Thin carbon overcoat and method of its making
DE4412792A1 (de) * 1994-04-14 1995-10-19 Leybold Materials Gmbh Vorrichtung und Verfahren zum Verbinden von flächigen Werkstücken
US5647529A (en) * 1995-03-10 1997-07-15 Motorola, Inc. Method of controlling the temperature of a portion of an electronic part during solder reflow
US5860583A (en) * 1996-07-01 1999-01-19 Motorola, Inc. Evaporative cooling vessel for controlling the temperature of a portion of an electronic part during solder reflow
US6774339B1 (en) 1999-11-09 2004-08-10 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
WO2001034339A1 (en) * 1999-11-09 2001-05-17 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
JP3319740B2 (ja) * 2000-06-02 2002-09-03 株式会社日鉱マテリアルズ ロウ材塗布装置
US7185420B2 (en) * 2002-06-07 2007-03-06 Intel Corporation Apparatus for thermally coupling a heat dissipation device to a microelectronic device
US7425093B2 (en) * 2003-07-16 2008-09-16 Cabot Corporation Thermography test method and apparatus for bonding evaluation in sputtering targets
US7431195B2 (en) * 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US7354659B2 (en) * 2005-03-30 2008-04-08 Reactive Nanotechnologies, Inc. Method for fabricating large dimension bonds using reactive multilayer joining
US8342383B2 (en) * 2006-07-06 2013-01-01 Praxair Technology, Inc. Method for forming sputter target assemblies having a controlled solder thickness
JP5387118B2 (ja) * 2008-06-10 2014-01-15 東ソー株式会社 円筒形スパッタリングターゲット及びその製造方法
US20100012488A1 (en) 2008-07-15 2010-01-21 Koenigsmann Holger J Sputter target assembly having a low-temperature high-strength bond
JP5686017B2 (ja) * 2011-03-28 2015-03-18 三菱マテリアル株式会社 スパッタリングターゲットの製造方法
KR20140029456A (ko) * 2011-04-29 2014-03-10 프랙스에어 에스.티. 테크놀로지, 인코포레이티드 원통형 스퍼터 타깃 조립체를 형성하는 방법
JP5952653B2 (ja) * 2012-06-26 2016-07-13 株式会社コベルコ科研 ターゲット接合体
CN115261805B (zh) * 2022-07-21 2024-03-19 长沙壹纳光电材料有限公司 一种平面靶材的绑定方法

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US2169354A (en) * 1936-02-17 1939-08-15 Clad Metals Ind Inc Method of and means for producing steel clad with stainless steel
US2756361A (en) * 1951-07-06 1956-07-24 Kenneth J Germeshausen Gaseous-discharge device and method of making the same
US3710069A (en) * 1970-07-06 1973-01-09 Ibm Method of and apparatus for selective solder reflow
GB1331028A (en) * 1971-08-07 1973-09-19 Matsushita Electronics Corp Method of soldering a semiconductor plate
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DE2511210C3 (de) * 1975-03-14 1980-03-06 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und Vorrichtung zum Tauchlöten von Halbleiterbauelementen
US4200782A (en) * 1975-11-21 1980-04-29 Moskovsky Institut Neftekhimicheskoi I Gazovoi Promyshlennosti Imeni I.M. Gubkina Method and device for regulating parameters of thermal cycles in electroslag welding
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NL7805800A (nl) * 1978-05-29 1979-12-03 Philips Nv Werkwijze en inrichting voor het solderen van onderde- len op een gatloos dikke-film substraat alsmede dikke-film substraat met onderdelen gesoldeerd met de werkwijze.
US4290876A (en) * 1980-06-05 1981-09-22 Murata Manufacturing Co., Ltd. Sputtering apparatus
JPS5893871A (ja) * 1981-11-30 1983-06-03 Tanaka Kikinzoku Kogyo Kk マグネトロンスパッター用ターゲットの製造方法
DE3148354A1 (de) * 1981-12-07 1983-06-09 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur kathodenzerstaeubung eines metalles
US4544091A (en) * 1982-05-06 1985-10-01 Gte Products Corporation Target bonding process
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GB8323065D0 (en) * 1983-08-26 1983-09-28 Rca Corp Flux free photo-detector soldering
DD239808B1 (de) * 1985-07-31 1989-04-19 Ardenne Forschungsinst Verfahren zum aufbonden von targets fuer plasmatronquellen
US4927069A (en) * 1988-07-15 1990-05-22 Sanken Electric Co., Ltd. Soldering method capable of providing a joint of reduced thermal resistance
US4895294A (en) * 1989-03-01 1990-01-23 Thore George M Method and apparatus for controlling solder flow in metallic members
JPH0313570A (ja) * 1989-06-09 1991-01-22 Mitsubishi Electric Corp 半導体製造装置及び半導体製造装置用ターゲット

Also Published As

Publication number Publication date
WO1994001596A1 (en) 1994-01-20
TW221038B (zh) 1994-02-11
JPH07509026A (ja) 1995-10-05
EP0650535A1 (en) 1995-05-03
CA2139221A1 (en) 1994-01-20
AU4108993A (en) 1994-01-31
KR950702647A (ko) 1995-07-29
US5230462A (en) 1993-07-27

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