SG49669A1 - Positive working photoresist composition - Google Patents

Positive working photoresist composition

Info

Publication number
SG49669A1
SG49669A1 SG1996003602A SG1996003602A SG49669A1 SG 49669 A1 SG49669 A1 SG 49669A1 SG 1996003602 A SG1996003602 A SG 1996003602A SG 1996003602 A SG1996003602 A SG 1996003602A SG 49669 A1 SG49669 A1 SG 49669A1
Authority
SG
Singapore
Prior art keywords
photoresist composition
positive working
working photoresist
positive
composition
Prior art date
Application number
SG1996003602A
Other languages
English (en)
Inventor
Ping-Hung Lu
Palph R Dammel
Nicholas Kiser Eib
Stanley A Ficner
Dinesh N Khanna
Thomas J Kloffenstein Jr
Christopher F Lyons
Marina Plat
Rahman M Dalil
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of SG49669A1 publication Critical patent/SG49669A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG1996003602A 1992-09-28 1993-09-24 Positive working photoresist composition SG49669A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95245192A 1992-09-28 1992-09-28

Publications (1)

Publication Number Publication Date
SG49669A1 true SG49669A1 (en) 1998-06-15

Family

ID=25492929

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996003602A SG49669A1 (en) 1992-09-28 1993-09-24 Positive working photoresist composition

Country Status (8)

Country Link
EP (1) EP0662222B1 (xx)
JP (1) JP3312341B2 (xx)
KR (1) KR100303911B1 (xx)
DE (1) DE69307716T2 (xx)
HK (1) HK63397A (xx)
SG (1) SG49669A1 (xx)
TW (1) TW323346B (xx)
WO (1) WO1994008275A1 (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612164A (en) * 1995-02-09 1997-03-18 Hoechst Celanese Corporation Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone
JP4797701B2 (ja) * 2006-03-02 2011-10-19 日立化成工業株式会社 感放射線性組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
JPS5271224A (en) * 1975-12-11 1977-06-14 Toshiba Corp Positive type light sensitive composition
JPS616647A (ja) * 1984-06-20 1986-01-13 Konishiroku Photo Ind Co Ltd ポジ型感光性平版印刷版用感光性組成物
JP2693472B2 (ja) * 1987-11-26 1997-12-24 株式会社東芝 レジスト
JP2623778B2 (ja) * 1988-10-18 1997-06-25 日本合成ゴム株式会社 感放射線性樹脂組成物

Also Published As

Publication number Publication date
WO1994008275A1 (en) 1994-04-14
KR100303911B1 (ko) 2001-11-22
JP3312341B2 (ja) 2002-08-05
EP0662222A1 (en) 1995-07-12
DE69307716T2 (de) 1997-06-12
KR950703757A (ko) 1995-09-20
EP0662222B1 (en) 1997-01-22
DE69307716D1 (de) 1997-03-06
HK63397A (en) 1997-05-23
JPH08502132A (ja) 1996-03-05
TW323346B (xx) 1997-12-21

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