KR950703757A - 양성-작용 포토레지스트 조성물(posivive-working pothoresist composition) - Google Patents

양성-작용 포토레지스트 조성물(posivive-working pothoresist composition)

Info

Publication number
KR950703757A
KR950703757A KR1019950701192A KR19950701192A KR950703757A KR 950703757 A KR950703757 A KR 950703757A KR 1019950701192 A KR1019950701192 A KR 1019950701192A KR 19950701192 A KR19950701192 A KR 19950701192A KR 950703757 A KR950703757 A KR 950703757A
Authority
KR
South Korea
Prior art keywords
pothoresist
positive
working
composition
working pothoresist
Prior art date
Application number
KR1019950701192A
Other languages
English (en)
Other versions
KR100303911B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR950703757A publication Critical patent/KR950703757A/ko
Application granted granted Critical
Publication of KR100303911B1 publication Critical patent/KR100303911B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1019950701192A 1992-09-28 1993-09-24 포지티브포토레이지스트조성물 KR100303911B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US95245192A 1992-09-28 1992-09-28
US07/952451 1992-09-28
PCT/US1993/009120 WO1994008275A1 (en) 1992-09-28 1993-09-24 Positive-working photoresist composition

Publications (2)

Publication Number Publication Date
KR950703757A true KR950703757A (ko) 1995-09-20
KR100303911B1 KR100303911B1 (ko) 2001-11-22

Family

ID=25492929

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950701192A KR100303911B1 (ko) 1992-09-28 1993-09-24 포지티브포토레이지스트조성물

Country Status (8)

Country Link
EP (1) EP0662222B1 (ko)
JP (1) JP3312341B2 (ko)
KR (1) KR100303911B1 (ko)
DE (1) DE69307716T2 (ko)
HK (1) HK63397A (ko)
SG (1) SG49669A1 (ko)
TW (1) TW323346B (ko)
WO (1) WO1994008275A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612164A (en) * 1995-02-09 1997-03-18 Hoechst Celanese Corporation Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone
JP4797701B2 (ja) * 2006-03-02 2011-10-19 日立化成工業株式会社 感放射線性組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
JPS5271224A (en) * 1975-12-11 1977-06-14 Toshiba Corp Positive type light sensitive composition
JPS616647A (ja) * 1984-06-20 1986-01-13 Konishiroku Photo Ind Co Ltd ポジ型感光性平版印刷版用感光性組成物
JP2693472B2 (ja) * 1987-11-26 1997-12-24 株式会社東芝 レジスト
JP2623778B2 (ja) * 1988-10-18 1997-06-25 日本合成ゴム株式会社 感放射線性樹脂組成物

Also Published As

Publication number Publication date
DE69307716T2 (de) 1997-06-12
JP3312341B2 (ja) 2002-08-05
KR100303911B1 (ko) 2001-11-22
TW323346B (ko) 1997-12-21
JPH08502132A (ja) 1996-03-05
HK63397A (en) 1997-05-23
DE69307716D1 (de) 1997-03-06
SG49669A1 (en) 1998-06-15
EP0662222B1 (en) 1997-01-22
EP0662222A1 (en) 1995-07-12
WO1994008275A1 (en) 1994-04-14

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Legal Events

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A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Publication of correction
FPAY Annual fee payment

Payment date: 20080630

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee