SG49605A1 - Magnetoresistive film method of its fabrication and magnetoresistive sensor - Google Patents

Magnetoresistive film method of its fabrication and magnetoresistive sensor

Info

Publication number
SG49605A1
SG49605A1 SG1996000761A SG1996000761A SG49605A1 SG 49605 A1 SG49605 A1 SG 49605A1 SG 1996000761 A SG1996000761 A SG 1996000761A SG 1996000761 A SG1996000761 A SG 1996000761A SG 49605 A1 SG49605 A1 SG 49605A1
Authority
SG
Singapore
Prior art keywords
magnetoresistive
fabrication
film method
sensor
magnetoresistive sensor
Prior art date
Application number
SG1996000761A
Other languages
English (en)
Inventor
Kevin Robert Coffey
James Kent Howard
Todd Lanier Hylton
Michael Andrew Parker
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG49605A1 publication Critical patent/SG49605A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
    • H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
SG1996000761A 1993-06-18 1994-06-08 Magnetoresistive film method of its fabrication and magnetoresistive sensor SG49605A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7965693A 1993-06-18 1993-06-18

Publications (1)

Publication Number Publication Date
SG49605A1 true SG49605A1 (en) 1998-06-15

Family

ID=22151959

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996000761A SG49605A1 (en) 1993-06-18 1994-06-08 Magnetoresistive film method of its fabrication and magnetoresistive sensor

Country Status (4)

Country Link
US (1) US6016241A (cg-RX-API-DMAC7.html)
EP (1) EP0629998A2 (cg-RX-API-DMAC7.html)
JP (1) JP2793505B2 (cg-RX-API-DMAC7.html)
SG (1) SG49605A1 (cg-RX-API-DMAC7.html)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
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JP3669457B2 (ja) * 1996-03-19 2005-07-06 富士通株式会社 磁気記録媒体及びその製造方法
US6214434B1 (en) * 1997-09-02 2001-04-10 Seagate Technology Llc Isolated single-domain high-density magnetic recording media and method of manufacturing the media
JP3024612B2 (ja) 1997-10-23 2000-03-21 日本電気株式会社 磁気抵抗効果素子およびその製造方法
JP4496320B2 (ja) * 1999-03-25 2010-07-07 独立行政法人産業技術総合研究所 磁気抵抗効果薄膜
JP2000339635A (ja) * 1999-05-31 2000-12-08 Toshiba Corp 磁気ヘッド及び磁気記録再生装置
US6610602B2 (en) 1999-06-29 2003-08-26 The Research Foundation Of State University Of New York Magnetic field sensor and method of manufacturing same using a self-organizing polymer mask
JP2001076331A (ja) * 1999-09-02 2001-03-23 Toshiba Corp 磁気記録媒体及び磁気記録再生装置
US6590751B1 (en) * 1999-09-30 2003-07-08 Headway Technologies, Inc. Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient
US6727105B1 (en) 2000-02-28 2004-04-27 Hewlett-Packard Development Company, L.P. Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
JP2002150512A (ja) * 2000-11-08 2002-05-24 Sony Corp 磁気抵抗効果素子および磁気抵抗効果型磁気ヘッド
US6794862B2 (en) * 2001-05-08 2004-09-21 Ramot At Tel-Aviv University Ltd. Magnetic thin film sensor based on the extraordinary hall effect
JP2003198004A (ja) * 2001-12-27 2003-07-11 Fujitsu Ltd 磁気抵抗効果素子
DE10297743B4 (de) * 2002-05-24 2010-01-07 National Institute Of Advanced Industrial Science And Technology Vorrichtung mit Magnetwiderstandseffekt
US7538987B2 (en) * 2003-07-03 2009-05-26 University Of Alabama CPP spin-valve element
JP4786331B2 (ja) 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
JP4514721B2 (ja) * 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
JP2007299880A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法
JP4550777B2 (ja) 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
JP5044157B2 (ja) * 2006-07-11 2012-10-10 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気再生装置
JP2008085220A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、および磁気再生装置
RU2316078C1 (ru) * 2006-10-13 2008-01-27 Институт физики металлов УрО РАН Магниторезистивный датчик
RU2386174C2 (ru) * 2006-12-28 2010-04-10 Валерий Андреевич Базыленко Способ защиты от подделок и контроля подлинности ценных изделий
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039007B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
KR101684915B1 (ko) * 2010-07-26 2016-12-12 삼성전자주식회사 자기 기억 소자
JP5879854B2 (ja) * 2011-09-16 2016-03-08 株式会社豊田中央研究所 ナノヘテロ構造磁気抵抗素子、その製造方法、および磁気センサ
JP5850308B2 (ja) * 2011-09-16 2016-02-03 株式会社豊田中央研究所 ナノヘテロ構造軟磁性材料およびその製造方法

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JPS58166510A (ja) * 1982-03-29 1983-10-01 Toshiba Corp 磁気再生装置
US4663242A (en) * 1983-05-27 1987-05-05 Olin Corporation Method for producing a metal alloy strip
JPH07105006B2 (ja) * 1985-11-05 1995-11-13 ソニー株式会社 磁気抵抗効果型磁気ヘツド
WO1988009395A1 (en) * 1987-05-20 1988-12-01 Matsushita Electric Industrial Co., Ltd. Process for preparing thin film of base metal and application of the same
DE3820475C1 (cg-RX-API-DMAC7.html) * 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
US4914538A (en) * 1988-08-18 1990-04-03 International Business Machines Corporation Magnetoresistive read transducer
JPH03155102A (ja) * 1989-11-13 1991-07-03 Mitsubishi Electric Corp 高導電性磁性材料
US5043693A (en) * 1990-08-13 1991-08-27 The United States Of America As Represented By The Secretary Of The Navy Heterogeneous magnetoresistive layer
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5159513A (en) * 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5268043A (en) * 1991-08-02 1993-12-07 Olin Corporation Magnetic sensor wire
JPH07508133A (ja) * 1992-06-16 1995-09-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 巨大な磁気抵抗性の単一膜合金

Also Published As

Publication number Publication date
JPH0758375A (ja) 1995-03-03
JP2793505B2 (ja) 1998-09-03
EP0629998A3 (cg-RX-API-DMAC7.html) 1995-01-04
US6016241A (en) 2000-01-18
EP0629998A2 (en) 1994-12-21

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