SG44674A1 - Magnetoresistive sensor with flux keepered spin valve configuration - Google Patents

Magnetoresistive sensor with flux keepered spin valve configuration

Info

Publication number
SG44674A1
SG44674A1 SG1996005392A SG1996005392A SG44674A1 SG 44674 A1 SG44674 A1 SG 44674A1 SG 1996005392 A SG1996005392 A SG 1996005392A SG 1996005392 A SG1996005392 A SG 1996005392A SG 44674 A1 SG44674 A1 SG 44674A1
Authority
SG
Singapore
Prior art keywords
spin valve
magnetoresistive sensor
valve configuration
keepered
flux
Prior art date
Application number
SG1996005392A
Other languages
English (en)
Inventor
William Charles Cain
David Eugene Heim
Po-Kang Wang
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG44674A1 publication Critical patent/SG44674A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
SG1996005392A 1993-06-11 1994-04-26 Magnetoresistive sensor with flux keepered spin valve configuration SG44674A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7661793A 1993-06-11 1993-06-11

Publications (1)

Publication Number Publication Date
SG44674A1 true SG44674A1 (en) 1997-12-19

Family

ID=22133169

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996005392A SG44674A1 (en) 1993-06-11 1994-04-26 Magnetoresistive sensor with flux keepered spin valve configuration

Country Status (4)

Country Link
US (1) US5508867A (ja)
EP (1) EP0628835A3 (ja)
JP (1) JP2784457B2 (ja)
SG (1) SG44674A1 (ja)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2722918B1 (fr) * 1994-07-21 1996-08-30 Commissariat Energie Atomique Capteur a magnetoresistance multicouche autopolarisee
US5898546A (en) * 1994-09-08 1999-04-27 Fujitsu Limited Magnetoresistive head and magnetic recording apparatus
US5991125A (en) * 1994-09-16 1999-11-23 Kabushiki Kaisha Toshiba Magnetic head
EP0731969B1 (en) * 1994-10-05 1999-12-01 Koninklijke Philips Electronics N.V. Magnetic multilayer device including a resonant-tunneling double-barrier structure
FR2729790A1 (fr) * 1995-01-24 1996-07-26 Commissariat Energie Atomique Magnetoresistance geante, procede de fabrication et application a un capteur magnetique
US5608593A (en) * 1995-03-09 1997-03-04 Quantum Peripherals Colorado, Inc. Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
JP3629309B2 (ja) * 1995-09-05 2005-03-16 アルプス電気株式会社 薄膜磁気ヘッド
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5768067A (en) 1995-09-19 1998-06-16 Alps Electric Co., Ltd. Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer
US5835003A (en) * 1995-09-29 1998-11-10 Hewlett-Packard Company Colossal magnetoresistance sensor
EP0768642A3 (en) * 1995-10-13 1998-12-16 Read-Rite Corporation Magnetic head with biased GMR element and sense current compensation
KR100246550B1 (ko) * 1995-10-15 2000-03-15 가네꼬 히사시 자기 저항 효과 소자
TW367493B (en) * 1996-04-30 1999-08-21 Toshiba Corp Reluctance component
US5742162A (en) * 1996-07-17 1998-04-21 Read-Rite Corporation Magnetoresistive spin valve sensor with multilayered keeper
US5705973A (en) * 1996-08-26 1998-01-06 Read-Rite Corporation Bias-free symmetric dual spin valve giant magnetoresistance transducer
US5739988A (en) * 1996-09-18 1998-04-14 International Business Machines Corporation Spin valve sensor with enhanced magnetoresistance
JP3291208B2 (ja) 1996-10-07 2002-06-10 アルプス電気株式会社 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド
US5715120A (en) * 1996-10-09 1998-02-03 International Business Machines Corporation Magnetoresistance sensor with enhanced magnetoresistive effect
US5768069A (en) * 1996-11-27 1998-06-16 International Business Machines Corporation Self-biased dual spin valve sensor
US5796561A (en) * 1996-11-27 1998-08-18 International Business Machines Corporation Self-biased spin valve sensor
US5748399A (en) * 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
US5825595A (en) * 1997-05-13 1998-10-20 International Business Machines Corporation Spin valve sensor with two spun values separated by an insulated current conductor
US6118622A (en) 1997-05-13 2000-09-12 International Business Machines Corporation Technique for robust resetting of spin valve head
JP2985964B2 (ja) * 1997-06-30 1999-12-06 日本電気株式会社 磁気抵抗効果型ヘッド及びその初期化方法
US5867351A (en) * 1997-07-25 1999-02-02 International Business Machines Corporation Spin valve read head with low moment, high coercivity pinning layer
US6061210A (en) * 1997-09-22 2000-05-09 International Business Machines Corporation Antiparallel pinned spin valve with high magnetic stability
US5880913A (en) * 1997-10-27 1999-03-09 International Business Machines Corporation Antiparallel pinned spin valve sensor with read signal symmetry
US6108166A (en) * 1998-03-12 2000-08-22 Read-Rite Corporation Current-pinned spin valve sensor
US6117569A (en) * 1998-05-27 2000-09-12 International Business Machines Corporation Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers
US6175475B1 (en) 1998-05-27 2001-01-16 International Business Machines Corporation Fully-pinned, flux-closed spin valve
US6127053A (en) * 1998-05-27 2000-10-03 International Business Machines Corporation Spin valves with high uniaxial anisotropy reference and keeper layers
JP2000040212A (ja) 1998-07-24 2000-02-08 Alps Electric Co Ltd スピンバルブ型薄膜素子
US6178072B1 (en) * 1998-11-09 2001-01-23 International Business Machines Corporation Keeper layer without sense current shunting in a giant magnetoresistive (GMR) head
US6185077B1 (en) 1999-01-06 2001-02-06 Read-Rite Corporation Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure
JP3212569B2 (ja) 1999-01-27 2001-09-25 アルプス電気株式会社 デュアルスピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びデュアルスピンバルブ型薄膜磁気素子の製造方法
US6351355B1 (en) * 1999-02-09 2002-02-26 Read-Rite Corporation Spin valve device with improved thermal stability
JP2000348310A (ja) 1999-06-03 2000-12-15 Alps Electric Co Ltd スピンバルブ型薄膜素子およびそのスピンバルブ型薄膜素子を備えた薄膜磁気ヘッド
KR20020013577A (ko) * 1999-07-05 2002-02-20 아끼구사 나오유끼 스핀 밸브 자기 저항 효과 헤드 및 이것을 이용한 복합형자기 헤드 및 자기 기록 매체 구동장치
US6286200B1 (en) 1999-07-23 2001-09-11 International Business Machines Corporation Dual mask process for making second pole piece layer of write head with high resolution narrow track width second pole tip
US6262869B1 (en) * 1999-08-02 2001-07-17 International Business Machines Corporation Spin valve sensor with encapsulated keeper layer and method of making
US6519117B1 (en) * 1999-12-06 2003-02-11 International Business Machines Corporation Dual AP pinned GMR head with offset layer
US6560077B2 (en) 2000-01-10 2003-05-06 The University Of Alabama CPP spin-valve device
US6404601B1 (en) 2000-01-25 2002-06-11 Read-Rite Corporation Merged write head with magnetically isolated poletip
JP2001307308A (ja) * 2000-04-24 2001-11-02 Fujitsu Ltd 磁気抵抗効果型ヘッドおよび情報再生装置
US6515838B1 (en) * 2000-06-06 2003-02-04 International Business Machines Corporation Biasing correction for simple GMR head
US6430014B1 (en) 2000-08-09 2002-08-06 International Business Machines Corporation Properly biased AP pinned spin valve sensor with a metallic pinning layer and no read gap offset
US6693756B2 (en) 2000-09-28 2004-02-17 Seagate Technology Llc Reducing read element power dissipation levels in a disc drive
US6522508B1 (en) 2000-11-17 2003-02-18 International Business Machines Corporation Magnetic head having current resettable insulated keeper design
US6724586B2 (en) 2001-03-27 2004-04-20 Hitachi Global Storage Technologies Netherlands B.V. Bias structure for magnetic tunnel junction magnetoresistive sensor
US6717403B2 (en) 2001-09-06 2004-04-06 Honeywell International Inc. Method and system for improving the efficiency of the set and offset straps on a magnetic sensor
US6667682B2 (en) 2001-12-26 2003-12-23 Honeywell International Inc. System and method for using magneto-resistive sensors as dual purpose sensors
US7390584B2 (en) * 2002-03-27 2008-06-24 Nve Corporation Spin dependent tunneling devices having reduced topological coupling
US6989971B2 (en) * 2002-04-05 2006-01-24 Hitachi Global Storage Technologies Netherlands, B.V. Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process
US20040061987A1 (en) * 2002-09-27 2004-04-01 International Business Machines Corporation Self-stabilized giant magnetoresistive spin valve read sensor
US6872467B2 (en) 2002-11-12 2005-03-29 Nve Corporation Magnetic field sensor with augmented magnetoresistive sensing layer
US7016163B2 (en) * 2003-02-20 2006-03-21 Honeywell International Inc. Magnetic field sensor
JP3973663B2 (ja) * 2003-04-30 2007-09-12 富士通株式会社 ヘッドサスペンション組立体および磁気記録再生装置
US7171741B2 (en) * 2003-07-25 2007-02-06 Hitachi Global Storage Technologies Netherlands B.V. Method for extended self-pinned layer for a current perpendicular to plane head
US7283333B2 (en) * 2004-02-11 2007-10-16 Hitachi Global Storage Technologies Netherlands B.V. Self-pinned double tunnel junction head
US7221545B2 (en) * 2004-02-18 2007-05-22 Hitachi Global Storage Technologies Netherlands B.V. High HC reference layer structure for self-pinned GMR heads
US7190560B2 (en) * 2004-02-18 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Self-pinned CPP sensor using Fe/Cr/Fe structure
US7397637B2 (en) * 2004-08-30 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Sensor with in-stack bias structure providing enhanced magnetostatic stabilization
JP2007218700A (ja) * 2006-02-15 2007-08-30 Tdk Corp 磁気センサおよび電流センサ
US9099120B1 (en) * 2014-04-09 2015-08-04 HGST Netherlands, B.V. Interlayer coupling field control in tunneling magnetoresistive read heads

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3908194A (en) * 1974-08-19 1975-09-23 Ibm Integrated magnetoresistive read, inductive write, batch fabricated magnetic head
US4755897A (en) * 1987-04-28 1988-07-05 International Business Machines Corporation Magnetoresistive sensor with improved antiferromagnetic film
US5005096A (en) * 1988-12-21 1991-04-02 International Business Machines Corporation Magnetoresistive read transducer having hard magnetic shunt bias
US5079663A (en) * 1990-01-29 1992-01-07 International Business Machines Corporation Magnetoresistive sensor with track following capability
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5159513A (en) * 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5258884A (en) * 1991-10-17 1993-11-02 International Business Machines Corporation Magnetoresistive read transducer containing a titanium and tungsten alloy spacer layer
US5304975A (en) * 1991-10-23 1994-04-19 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetoresistance effect sensor
FR2685489B1 (fr) * 1991-12-23 1994-08-05 Thomson Csf Capteur de champ magnetique faible a effet magnetoresistif.
JPH05258248A (ja) * 1992-03-13 1993-10-08 Hitachi Ltd 多層磁気抵抗効果膜とそれを用いた磁気ヘッドおよび磁気記録再生装置
EP0565102A2 (en) * 1992-04-10 1993-10-13 Hitachi Maxell, Ltd. Magnetic laminations and magnetic heads and magnetic recording/reproducing devices using a magnetic lamination
US5287238A (en) * 1992-11-06 1994-02-15 International Business Machines Corporation Dual spin valve magnetoresistive sensor
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
US5508867A (en) 1996-04-16
EP0628835A2 (en) 1994-12-14
EP0628835A3 (en) 1995-11-29
JP2784457B2 (ja) 1998-08-06
JPH0855312A (ja) 1996-02-27

Similar Documents

Publication Publication Date Title
SG44674A1 (en) Magnetoresistive sensor with flux keepered spin valve configuration
SG50880A1 (en) Spin valve sensor with enhanced magnetoresistance
EP0611033A3 (en) Magnetoresistive spin valve sensor and magnetic arrangement with such a sensor.
EP0498640A3 (en) Magnetoresistive sensor based on oscillations in the magnetoresistance
SG42845A1 (en) Magnetoresistance sensor
EP0669607A3 (en) Magnetic head assembly with MR sensor.
SG42330A1 (en) Magnetoresistive sensor
SG42342A1 (en) Magnetoresistive sensor
EP0529959A3 (en) Magnetoresistive sensor
SG63839A1 (en) Antiparallel pinned spin valve with read signal symmetry
EP0687917A3 (en) Magnetoresistive spin valve sensor with self-anchoring laminated layer and use of the sensor in a magnetic recording system
SG43377A1 (en) Spin valve sensor with antiparallel magnetization of pinned layers
EP0694788A3 (en) Magnetoresistive spin valve sensor, method of manufacturing the sensor, and magnetic recording device using the sensor
EP0585009A3 (en) Magnetoresistive sensor.
EP0611951A3 (en) Magnetic rotary sensor.
DE19580095T1 (de) Sensor mit magnetoresistiven Elementen
DE69704536D1 (de) Spin-Ventil GMR Sensor mit Austauschstabilisierung
EP0701141A3 (de) Magnetfeldsensor mit Hallelement
EP0520388A3 (en) Magnetic position sensor
EP0490608A3 (en) Magnetoresistive sensor
EP0662667A3 (en) Magnetic sensor with a component with an anisotropic contour.
EP0605336A3 (en) Magnetoresistive magnetic field sensor with a very long active area.
SG47371A1 (en) Magnetoresistive head
EP0505041A3 (en) Magnetic sensor
EP0656621A3 (en) Magnetoresistive head with separated magnet.