SG44490A1 - Contacts for semiconductor devices - Google Patents

Contacts for semiconductor devices

Info

Publication number
SG44490A1
SG44490A1 SG1996000909A SG1996000909A SG44490A1 SG 44490 A1 SG44490 A1 SG 44490A1 SG 1996000909 A SG1996000909 A SG 1996000909A SG 1996000909 A SG1996000909 A SG 1996000909A SG 44490 A1 SG44490 A1 SG 44490A1
Authority
SG
Singapore
Prior art keywords
contacts
semiconductor devices
semiconductor
devices
Prior art date
Application number
SG1996000909A
Other languages
English (en)
Inventor
Avishay Katz
Michael Geva
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of SG44490A1 publication Critical patent/SG44490A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2233—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Chemical Vapour Deposition (AREA)
SG1996000909A 1992-10-13 1993-10-07 Contacts for semiconductor devices SG44490A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/960,526 US5232873A (en) 1992-10-13 1992-10-13 Method of fabricating contacts for semiconductor devices

Publications (1)

Publication Number Publication Date
SG44490A1 true SG44490A1 (en) 1997-12-19

Family

ID=25503287

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996000909A SG44490A1 (en) 1992-10-13 1993-10-07 Contacts for semiconductor devices

Country Status (6)

Country Link
US (1) US5232873A (ko)
EP (1) EP0597587A1 (ko)
JP (1) JP3583451B2 (ko)
KR (1) KR0182299B1 (ko)
SG (1) SG44490A1 (ko)
TW (1) TW295681B (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2773578B2 (ja) * 1992-10-02 1998-07-09 日本電気株式会社 半導体装置の製造方法
US5367195A (en) * 1993-01-08 1994-11-22 International Business Machines Corporation Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
KR960008558B1 (en) * 1993-03-02 1996-06-28 Samsung Electronics Co Ltd Low resistance contact structure and manufacturing method of high integrated semiconductor device
US5489552A (en) * 1994-12-30 1996-02-06 At&T Corp. Multiple layer tungsten deposition process
US5599739A (en) * 1994-12-30 1997-02-04 Lucent Technologies Inc. Barrier layer treatments for tungsten plug
US5559056A (en) * 1995-01-13 1996-09-24 National Semiconductor Corporation Method and apparatus for capping metallization layer
JP3000877B2 (ja) * 1995-02-20 2000-01-17 松下電器産業株式会社 金メッキ電極の形成方法、基板及びワイヤボンディング方法
US5693561A (en) * 1996-05-14 1997-12-02 Lucent Technologies Inc. Method of integrated circuit fabrication including a step of depositing tungsten
US6143362A (en) * 1998-02-25 2000-11-07 Micron Technology, Inc. Chemical vapor deposition of titanium
US6284316B1 (en) 1998-02-25 2001-09-04 Micron Technology, Inc. Chemical vapor deposition of titanium
US6271131B1 (en) 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6284655B1 (en) 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
US6329286B1 (en) 1999-04-27 2001-12-11 Micron Technology, Inc. Methods for forming conformal iridium layers on substrates
US6660631B1 (en) * 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
KR100707882B1 (ko) * 2005-12-14 2007-04-13 삼성전자주식회사 선택적 에피택시얼 성장 방법
JP5244814B2 (ja) * 2006-11-22 2013-07-24 ソイテック 化学気相成長チャンバ用の温度制御されたパージゲート弁を使用した方法、アセンブリ及びシステム
US9190320B2 (en) * 2012-01-26 2015-11-17 Applied Materials, Inc. Devices including metal-silicon contacts using indium arsenide films and apparatus and methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567304B2 (ko) * 1972-08-28 1981-02-17
JPS60130165A (ja) * 1983-12-16 1985-07-11 Fujitsu Ltd 半導体装置
US4843033A (en) * 1985-09-27 1989-06-27 Texas Instruments Incorporated Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source
JPH0288452A (ja) * 1988-09-26 1990-03-28 Nichias Corp 耐熱性無機質成形体
US5141897A (en) * 1990-03-23 1992-08-25 At&T Bell Laboratories Method of making integrated circuit interconnection
US5086016A (en) * 1990-10-31 1992-02-04 International Business Machines Corporation Method of making semiconductor device contact including transition metal-compound dopant source
US5089438A (en) * 1991-04-26 1992-02-18 At&T Bell Laboratories Method of making an article comprising a TiNx layer
US5158896A (en) * 1991-07-03 1992-10-27 International Business Machines Corporation Method for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regions

Also Published As

Publication number Publication date
EP0597587A1 (en) 1994-05-18
TW295681B (ko) 1997-01-11
JPH06224409A (ja) 1994-08-12
US5232873A (en) 1993-08-03
JP3583451B2 (ja) 2004-11-04
KR940010207A (ko) 1994-05-24
KR0182299B1 (ko) 1999-04-15

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