SG43949A1 - X-ray mask support and process for preparation thereof - Google Patents

X-ray mask support and process for preparation thereof

Info

Publication number
SG43949A1
SG43949A1 SG1996006746A SG1996006746A SG43949A1 SG 43949 A1 SG43949 A1 SG 43949A1 SG 1996006746 A SG1996006746 A SG 1996006746A SG 1996006746 A SG1996006746 A SG 1996006746A SG 43949 A1 SG43949 A1 SG 43949A1
Authority
SG
Singapore
Prior art keywords
support
film
preparation
ray mask
mask support
Prior art date
Application number
SG1996006746A
Other languages
English (en)
Inventor
Akira Miyake
Hideo Kato
Nobuo Kushibiki
Yasuaki Fukuda
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG43949A1 publication Critical patent/SG43949A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG1996006746A 1987-09-30 1988-09-20 X-ray mask support and process for preparation thereof SG43949A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP24420287 1987-09-30
JP24420187 1987-09-30
JP24420387 1987-09-30
JP25730487 1987-10-14
JP26804487 1987-10-26
JP1348788 1988-01-26

Publications (1)

Publication Number Publication Date
SG43949A1 true SG43949A1 (en) 1997-11-14

Family

ID=27548462

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996006746A SG43949A1 (en) 1987-09-30 1988-09-20 X-ray mask support and process for preparation thereof

Country Status (4)

Country Link
US (1) US5101420A (de)
EP (2) EP0697630B1 (de)
DE (2) DE3856449T2 (de)
SG (1) SG43949A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5209996A (en) * 1989-07-26 1993-05-11 Shin-Etsu Chemical Co., Ltd. Membrane consisting of silicon carbide and silicon nitride, method for the preparation thereof and mask for X-ray lithography utilizing the same
JP3133602B2 (ja) * 1994-03-16 2001-02-13 キヤノン株式会社 Ｘ線マスク構造体とその製造方法、及び該ｘ線マスク構造体を用いたｘ線露光方法、及びｘ線露光装置と該ｘ線マスク構造体を用いて作製された半導体デバイス及び半導体デバイスの製造方法
US5670279A (en) * 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5538151A (en) * 1995-01-20 1996-07-23 International Business Machines Corp. Recovery of an anodically bonded glass device from a susstrate by use of a metal interlayer
US6066418A (en) * 1996-07-10 2000-05-23 Nec Corporation X-ray mask and fabrication process therefor
DE19756486C1 (de) * 1997-12-18 1999-04-22 Schott Glas Trägertisch für eine Photomaske in einer Vorrichtung zur Mikrochip-Herstellung
US6938783B2 (en) * 2000-07-26 2005-09-06 Amerasia International Technology, Inc. Carrier tape
US7014961B2 (en) * 2002-10-02 2006-03-21 Yazaki Corporation Photomask assembly incorporating a porous frame
EP2104164A4 (de) * 2006-12-28 2012-01-18 Dow Corning Toray Co Ltd Poröses siliziumhaltiges auf kohlenstoff basierendes verbundmaterial, daraus zusammengesetzte elektrode und batterie
CN105765457B (zh) * 2013-11-29 2020-01-21 Ev 集团 E·索尔纳有限责任公司 具有印模结构的印模及其制造方法
US10739671B2 (en) * 2017-11-10 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing phase shift photo masks
WO2024208766A1 (en) * 2023-04-04 2024-10-10 Asml Netherlands B.V. Euv-transmissive barrier

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
JPS5320767A (en) 1976-08-10 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> X-ray mask supporting underlayer and its production
JPS5792830A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Manufacture of mask for x-ray exposure
JPS58202530A (ja) * 1982-05-21 1983-11-25 Seiko Epson Corp Ｘ線マスク
JPS5950443A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd Ｘ線マスク
JPS59129851A (ja) * 1983-01-17 1984-07-26 Nec Corp Ｘ線露光用マスクの製造方法
JPS60168145A (ja) * 1984-02-13 1985-08-31 Nec Corp Ｘ線露光マスク
US4608326A (en) * 1984-02-13 1986-08-26 Hewlett-Packard Company Silicon carbide film for X-ray masks and vacuum windows
US4604292A (en) * 1985-04-26 1986-08-05 Spire Corporation X-ray mask blank process
ATA331285A (de) * 1985-11-13 1988-11-15 Ims Ionen Mikrofab Syst Verfahren zur herstellung einer transmissionsmaske
DE3677005D1 (de) * 1986-05-06 1991-02-21 Ibm Deutschland Maske fuer die ionen-, elektronen- oder roentgenstrahllithographie und verfahren zur ihrer herstellung.

Also Published As

Publication number Publication date
EP0697630A1 (de) 1996-02-21
DE3855834D1 (de) 1997-04-24
US5101420A (en) 1992-03-31
EP0697630B1 (de) 2001-01-03
DE3855834T2 (de) 1997-10-16
EP0310124A2 (de) 1989-04-05
EP0310124B1 (de) 1997-03-19
EP0310124A3 (de) 1991-04-03
DE3856449T2 (de) 2001-04-19
DE3856449D1 (de) 2001-02-08

Similar Documents

Publication Publication Date Title
SG43949A1 (en) X-ray mask support and process for preparation thereof
TW330307B (en) Semiconductor substrate and producing method thereof
AU1056688A (en) Thermal imaging medium
US5629132B1 (en) Method for engraving and/or etching with image-carrying mask and photo-sensitive laminate film for use in making the mask
GB2242313B (en) Process for producing multilayer silicon structures
EP0338816A3 (en) Process and equipment for micropattern forming on roll surface, metal sheets for pressworking prepared by the roll and methods of preparing same
EP0519079A4 (en) Process for forming silicon oxide film
AU2980292A (en) Improvements in and relating to paper machine clothing
USD293020S (en) Hot air blower
DE69427340D1 (de) Herstellungsverfahren einer oberflächenleitenden elektronenemittierenden Vorrichtung und Bilderzeugungsgerät
DE69403059D1 (de) Dauermagnetmaterial, dessen Herstellungsverfahren und Dauermagnet
EP0571632A4 (de) Polykristalline siliziumdünnschicht und herstellungsverfahren ihrer formung bei niedriger temperatur.
AU584816B2 (en) Method of detecting the position of a chrome-on-glass reticle in an electron beam lithography apparatus
HU9204076D0 (en) Method for producing 4,13-dioxa-bicyclo(8.2.1)-tridecenone derivatives
CA2082909A1 (en) X-ray mask structure and x-ray exposing method, and semiconductor device manufactured by use of x-ray mask structure, and method for manufacturing x-ray mask structure
DE59504094D1 (de) Rasterbild und thermotransferfolie zu dessen herstellung
GR3021098T3 (en) Intumescent conforming mounting pad.
CA2198904A1 (en) Scanning image and thermotransfer foil for the production thereof
EP0466320A3 (en) Process for preparing a semiconductor device including the selective deposition of a metal
AU6924791A (en) Method of making ceramic composite bodies and bodies made thereby
SG59964A1 (en) Process for forming deposited film and process for preparing semiconductor device
EP0316452A4 (de) Verfahren zur herstellung eines dünnen films von basismetall und dessen verwendung.
NO964657D0 (no) Flatedekorasjon med 3-dimensjonal virkning og fremgangsmåte for å fremstille en flatedekorasjon med 3-dimensjonal virkning
EP0463882A3 (en) Process for producing silicon nitride sintered material
TW348229B (en) X-ray mask and its fabrication method