SG34351A1 - Self-aligned opaque regions for attenuating phase-shifting masks - Google Patents

Self-aligned opaque regions for attenuating phase-shifting masks

Info

Publication number
SG34351A1
SG34351A1 SG1995002402A SG1995002402A SG34351A1 SG 34351 A1 SG34351 A1 SG 34351A1 SG 1995002402 A SG1995002402 A SG 1995002402A SG 1995002402 A SG1995002402 A SG 1995002402A SG 34351 A1 SG34351 A1 SG 34351A1
Authority
SG
Singapore
Prior art keywords
self
opaque regions
attenuating phase
shifting masks
aligned opaque
Prior art date
Application number
SG1995002402A
Other languages
English (en)
Inventor
John Joseph Demarco
Robert Louis Kostelak Jr
Taeho Kook
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23445319&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG34351(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by At & T Corp filed Critical At & T Corp
Publication of SG34351A1 publication Critical patent/SG34351A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG1995002402A 1994-12-30 1995-12-29 Self-aligned opaque regions for attenuating phase-shifting masks SG34351A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/366,952 US5589303A (en) 1994-12-30 1994-12-30 Self-aligned opaque regions for attenuating phase-shifting masks

Publications (1)

Publication Number Publication Date
SG34351A1 true SG34351A1 (en) 1996-12-06

Family

ID=23445319

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1995002402A SG34351A1 (en) 1994-12-30 1995-12-29 Self-aligned opaque regions for attenuating phase-shifting masks

Country Status (6)

Country Link
US (1) US5589303A (fr)
EP (1) EP0720051A3 (fr)
JP (1) JP3126649B2 (fr)
KR (1) KR960024661A (fr)
SG (1) SG34351A1 (fr)
TW (1) TW285747B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162589A (en) * 1998-03-02 2000-12-19 Hewlett-Packard Company Direct imaging polymer fluid jet orifice
KR100215850B1 (ko) * 1996-04-12 1999-08-16 구본준 하프톤 위상 반전 마스크 및_그제조방법
US5914202A (en) * 1996-06-10 1999-06-22 Sharp Microeletronics Technology, Inc. Method for forming a multi-level reticle
US5821013A (en) * 1996-12-13 1998-10-13 Symbios, Inc. Variable step height control of lithographic patterning through transmitted light intensity variation
US6150058A (en) * 1998-06-12 2000-11-21 Taiwan Semiconductor Manufacturing Company Method of making attenuating phase-shifting mask using different exposure doses
KR100295049B1 (ko) * 1998-07-23 2001-11-30 윤종용 위상반전마스크제조방법
US6670105B2 (en) * 1998-09-18 2003-12-30 Canon Kabushiki Kaisha Method of manufacturing diffractive optical element
US6617098B1 (en) * 1999-07-13 2003-09-09 Input/Output, Inc. Merged-mask micro-machining process
US6207333B1 (en) 1999-07-29 2001-03-27 International Business Machines Corporation Mask with attenuating phase-shift and opaque regions
TW452678B (en) * 2000-03-10 2001-09-01 Taiwan Semiconductor Mfg Method of forming attenuated phase shifting mask
DE102004019861B3 (de) * 2004-04-23 2006-01-05 Infineon Technologies Ag Verfahren zum Herstellen einer Maske für eine lithographische Abbildung
US7699972B2 (en) * 2006-03-08 2010-04-20 Applied Materials, Inc. Method and apparatus for evaluating polishing pad conditioning
US10811492B2 (en) 2018-10-31 2020-10-20 Texas Instruments Incorporated Method and device for patterning thick layers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609342B2 (ja) * 1975-05-28 1985-03-09 株式会社日立製作所 パタ−ンの作製法
US4770947A (en) * 1987-01-02 1988-09-13 International Business Machines Corporation Multiple density mask and fabrication thereof
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
TW284911B (fr) * 1992-08-18 1996-09-01 At & T Corp
DE4404453C2 (de) * 1993-02-12 1996-07-11 Mitsubishi Electric Corp Abschwächungsphasenschiebermaske und Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
JPH08278626A (ja) 1996-10-22
TW285747B (fr) 1996-09-11
US5589303A (en) 1996-12-31
EP0720051A2 (fr) 1996-07-03
JP3126649B2 (ja) 2001-01-22
EP0720051A3 (fr) 1997-04-16
KR960024661A (ko) 1996-07-20

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