SG196777A1 - Recovery for non-volatile memory after power loss - Google Patents

Recovery for non-volatile memory after power loss

Info

Publication number
SG196777A1
SG196777A1 SG2013096912A SG2013096912A SG196777A1 SG 196777 A1 SG196777 A1 SG 196777A1 SG 2013096912 A SG2013096912 A SG 2013096912A SG 2013096912 A SG2013096912 A SG 2013096912A SG 196777 A1 SG196777 A1 SG 196777A1
Authority
SG
Singapore
Prior art keywords
power loss
volatile memory
recovery
memory array
marked
Prior art date
Application number
SG2013096912A
Other languages
English (en)
Inventor
Joseph Edgington
Hisham Chowdhury
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG196777A1 publication Critical patent/SG196777A1/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/10—Address translation
    • G06F12/1009—Address translation using page tables, e.g. page table structures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7209—Validity control, e.g. using flags, time stamps or sequence numbers

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
SG2013096912A 2008-12-31 2009-11-09 Recovery for non-volatile memory after power loss SG196777A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/347,935 US9612954B2 (en) 2008-12-31 2008-12-31 Recovery for non-volatile memory after power loss

Publications (1)

Publication Number Publication Date
SG196777A1 true SG196777A1 (en) 2014-02-13

Family

ID=42221053

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2013096912A SG196777A1 (en) 2008-12-31 2009-11-09 Recovery for non-volatile memory after power loss
SG200907451-9A SG162655A1 (en) 2008-12-31 2009-11-09 Recovery for non-volatile memory after power loss

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200907451-9A SG162655A1 (en) 2008-12-31 2009-11-09 Recovery for non-volatile memory after power loss

Country Status (6)

Country Link
US (2) US9612954B2 (enExample)
JP (1) JP5528782B2 (enExample)
KR (1) KR101613678B1 (enExample)
CN (1) CN101770809B (enExample)
DE (1) DE102009051862A1 (enExample)
SG (2) SG196777A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10552311B2 (en) 2008-12-31 2020-02-04 Micron Technology, Inc. Recovery for non-volatile memory after power loss

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US10552311B2 (en) 2008-12-31 2020-02-04 Micron Technology, Inc. Recovery for non-volatile memory after power loss

Also Published As

Publication number Publication date
US20100169543A1 (en) 2010-07-01
DE102009051862A1 (de) 2010-07-01
CN101770809B (zh) 2014-03-26
KR20100080350A (ko) 2010-07-08
JP5528782B2 (ja) 2014-06-25
US9612954B2 (en) 2017-04-04
SG162655A1 (en) 2010-07-29
JP2010157216A (ja) 2010-07-15
CN101770809A (zh) 2010-07-07
US20170206157A1 (en) 2017-07-20
KR101613678B1 (ko) 2016-04-19
US10552311B2 (en) 2020-02-04

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