SG195564A1 - Transparent conductive zinc oxide display film and production method therefor - Google Patents
Transparent conductive zinc oxide display film and production method therefor Download PDFInfo
- Publication number
- SG195564A1 SG195564A1 SG2013077318A SG2013077318A SG195564A1 SG 195564 A1 SG195564 A1 SG 195564A1 SG 2013077318 A SG2013077318 A SG 2013077318A SG 2013077318 A SG2013077318 A SG 2013077318A SG 195564 A1 SG195564 A1 SG 195564A1
- Authority
- SG
- Singapore
- Prior art keywords
- transparent conductive
- fact
- accordance
- hydrogen
- coating
- Prior art date
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 134
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000001257 hydrogen Substances 0.000 claims abstract description 57
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 57
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000002834 transmittance Methods 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 26
- 239000012298 atmosphere Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000004411 aluminium Substances 0.000 claims abstract description 9
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 239000000460 chlorine Substances 0.000 claims abstract description 6
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 6
- 239000011737 fluorine Substances 0.000 claims abstract description 6
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims abstract description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims description 30
- 239000002019 doping agent Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229960003903 oxygen Drugs 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 66
- 238000012545 processing Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229940060038 chlorine Drugs 0.000 description 4
- 235000017168 chlorine Nutrition 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 hydro- gen compound Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Laminated Bodies (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08018397A EP2180529A1 (en) | 2008-10-21 | 2008-10-21 | Transparent conductive zinc oxide film and production method thereof |
| US12/255,019 US20100095866A1 (en) | 2008-10-21 | 2008-10-21 | Transparent conductive zinc oxide film and production method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG195564A1 true SG195564A1 (en) | 2013-12-30 |
Family
ID=42027745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013077318A SG195564A1 (en) | 2008-10-21 | 2009-10-05 | Transparent conductive zinc oxide display film and production method therefor |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2338178A1 (ja) |
| JP (1) | JP5647130B2 (ja) |
| KR (1) | KR20110089143A (ja) |
| CN (1) | CN102187476B (ja) |
| SG (1) | SG195564A1 (ja) |
| TW (1) | TW201022457A (ja) |
| WO (1) | WO2010046025A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2961955B1 (fr) * | 2010-06-29 | 2012-07-20 | Saint Gobain | Cellule photovoltaique a colorant |
| WO2012043732A1 (ja) * | 2010-10-01 | 2012-04-05 | 株式会社エス・エフ・シー | 成膜方法 |
| DE102011116191A1 (de) * | 2011-10-13 | 2013-04-18 | Southwall Europe Gmbh | Mehrschichtsysteme für eine selektive Reflexion elektromagnetischer Strahlung aus dem Wellenlängenspektrum des Sonnenlichts und Verfahren zu seiner Herstellung |
| EP2738815B1 (en) | 2012-11-30 | 2016-02-10 | Samsung Electronics Co., Ltd | Semiconductor materials, transistors including the same, and electronic devices including transistors |
| CN105695947A (zh) * | 2016-04-09 | 2016-06-22 | 浙江大学 | 一种具有高迁移率的非金属共掺杂ZnO透明导电薄膜及其制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4638111A (en) * | 1985-06-04 | 1987-01-20 | Atlantic Richfield Company | Thin film solar cell module |
| US4623601A (en) * | 1985-06-04 | 1986-11-18 | Atlantic Richfield Company | Photoconductive device containing zinc oxide transparent conductive layer |
| JPS62190613A (ja) * | 1986-02-17 | 1987-08-20 | 株式会社半導体エネルギー研究所 | 酸化亜鉛導電膜の作製方法 |
| US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
| WO1992018990A1 (en) * | 1991-04-10 | 1992-10-29 | Tokio Nakada | Method for manufacturing transparent conductive film |
| JP2928016B2 (ja) * | 1992-03-25 | 1999-07-28 | 株式会社富士電機総合研究所 | 透明導電膜の成膜方法 |
| US20020084455A1 (en) * | 1999-03-30 | 2002-07-04 | Jeffery T. Cheung | Transparent and conductive zinc oxide film with low growth temperature |
| JP2002363732A (ja) * | 2001-03-15 | 2002-12-18 | Asahi Glass Co Ltd | 透明導電膜の製造方法および透明導電膜付き透明基板 |
| JP2003105533A (ja) * | 2001-10-01 | 2003-04-09 | Mitsubishi Heavy Ind Ltd | 透明導電膜の製造方法及び透明導電膜 |
| JP2004207383A (ja) * | 2002-12-24 | 2004-07-22 | Central Glass Co Ltd | 電磁遮蔽膜 |
| JP2004296597A (ja) * | 2003-03-26 | 2004-10-21 | Canon Inc | 積層型光起電力素子の製造方法 |
| JP4599595B2 (ja) * | 2005-12-05 | 2010-12-15 | 学校法人金沢工業大学 | 透明導電膜の製造方法および製造装置 |
| JP2007327079A (ja) * | 2006-06-06 | 2007-12-20 | Sony Corp | 透明導電積層膜及びその製造方法 |
-
2009
- 2009-10-05 CN CN200980142398XA patent/CN102187476B/zh not_active Expired - Fee Related
- 2009-10-05 KR KR1020117011531A patent/KR20110089143A/ko not_active Application Discontinuation
- 2009-10-05 EP EP09778822A patent/EP2338178A1/en not_active Withdrawn
- 2009-10-05 WO PCT/EP2009/007112 patent/WO2010046025A1/en active Application Filing
- 2009-10-05 JP JP2011532516A patent/JP5647130B2/ja not_active Expired - Fee Related
- 2009-10-05 SG SG2013077318A patent/SG195564A1/en unknown
- 2009-10-12 TW TW098134513A patent/TW201022457A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102187476B (zh) | 2013-09-11 |
| JP5647130B2 (ja) | 2014-12-24 |
| JP2012506486A (ja) | 2012-03-15 |
| WO2010046025A1 (en) | 2010-04-29 |
| TW201022457A (en) | 2010-06-16 |
| CN102187476A (zh) | 2011-09-14 |
| EP2338178A1 (en) | 2011-06-29 |
| KR20110089143A (ko) | 2011-08-04 |
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