SG183780A1 - Copper cmp composition containing ionic polyelectrolyte and method - Google Patents

Copper cmp composition containing ionic polyelectrolyte and method Download PDF

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Publication number
SG183780A1
SG183780A1 SG2012063707A SG2012063707A SG183780A1 SG 183780 A1 SG183780 A1 SG 183780A1 SG 2012063707 A SG2012063707 A SG 2012063707A SG 2012063707 A SG2012063707 A SG 2012063707A SG 183780 A1 SG183780 A1 SG 183780A1
Authority
SG
Singapore
Prior art keywords
polyelectrolyte
copper
composition
weight
complexing agent
Prior art date
Application number
SG2012063707A
Other languages
English (en)
Inventor
Daniela White
Jason Keleher
John Parker
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG183780A1 publication Critical patent/SG183780A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG2012063707A 2007-08-28 2008-08-19 Copper cmp composition containing ionic polyelectrolyte and method SG183780A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/895,896 US20090056231A1 (en) 2007-08-28 2007-08-28 Copper CMP composition containing ionic polyelectrolyte and method

Publications (1)

Publication Number Publication Date
SG183780A1 true SG183780A1 (en) 2012-09-27

Family

ID=40405295

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2012063707A SG183780A1 (en) 2007-08-28 2008-08-19 Copper cmp composition containing ionic polyelectrolyte and method

Country Status (8)

Country Link
US (1) US20090056231A1 (https=)
EP (1) EP2190947A4 (https=)
JP (1) JP5960386B2 (https=)
KR (1) KR101305840B1 (https=)
CN (1) CN101796160B (https=)
SG (1) SG183780A1 (https=)
TW (1) TWI434918B (https=)
WO (1) WO2009032065A1 (https=)

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TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
WO2011017154A2 (en) * 2009-07-28 2011-02-10 Sunsonix, Inc. Silicon wafer sawing fluid and process for the use thereof
JP5774283B2 (ja) * 2010-04-08 2015-09-09 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR102033495B1 (ko) 2012-02-01 2019-10-17 히타치가세이가부시끼가이샤 금속용 연마액 및 연마 방법
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
JP2014041978A (ja) * 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
EP2914675A4 (en) * 2012-11-02 2016-10-05 L Livermore Nat Security Llc METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY
CN103865402A (zh) * 2012-12-17 2014-06-18 安集微电子（上海）有限公司 一种化学机械抛光液
US9303187B2 (en) 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
JP6400897B2 (ja) * 2013-11-06 2018-10-03 ニッタ・ハース株式会社 研磨組成物
SG11201607461PA (en) * 2014-03-28 2016-10-28 Fujimi Inc Polishing composition and polishing method using the same
US9914852B2 (en) * 2014-08-19 2018-03-13 Fujifilm Planar Solutions, LLC Reduction in large particle counts in polishing slurries
JP6495230B2 (ja) 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
KR101874996B1 (ko) * 2016-12-27 2018-07-05 한남대학교 산학협력단 연마효율이 우수한 화학-기계적 연마 슬러리
US10170335B1 (en) * 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
JP7330668B2 (ja) * 2018-03-08 2023-08-22 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法および半導体基板の製造方法
CN108930058B (zh) * 2018-07-06 2020-07-21 鹤山市精工制版有限公司 一种电化学处理液及其应用
JP7041714B2 (ja) * 2019-06-26 2022-03-24 花王株式会社 酸化珪素膜用研磨液組成物
CN116134110A (zh) * 2020-07-28 2023-05-16 Cmc材料股份有限公司 包含阴离子型及阳离子型抑制剂的化学机械抛光组合物
CN116249754A (zh) * 2020-07-29 2023-06-09 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)的瓶中垫(pib)技术
CN117683467A (zh) * 2022-09-02 2024-03-12 万华化学集团电子材料有限公司 适用于集成电路铜互连结构化学机械抛光的抛光组合物及其应用

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JP4776269B2 (ja) * 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法
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Also Published As

Publication number Publication date
EP2190947A1 (en) 2010-06-02
KR101305840B1 (ko) 2013-09-23
CN101796160A (zh) 2010-08-04
TW200927897A (en) 2009-07-01
JP5960386B2 (ja) 2016-08-02
KR20100065341A (ko) 2010-06-16
US20090056231A1 (en) 2009-03-05
CN101796160B (zh) 2013-07-31
WO2009032065A1 (en) 2009-03-12
TWI434918B (zh) 2014-04-21
EP2190947A4 (en) 2013-04-24
JP2010538457A (ja) 2010-12-09

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