SG182076A1 - Semiconductor device package and method of manufacturing thereof - Google Patents

Semiconductor device package and method of manufacturing thereof Download PDF

Info

Publication number
SG182076A1
SG182076A1 SG2011090644A SG2011090644A SG182076A1 SG 182076 A1 SG182076 A1 SG 182076A1 SG 2011090644 A SG2011090644 A SG 2011090644A SG 2011090644 A SG2011090644 A SG 2011090644A SG 182076 A1 SG182076 A1 SG 182076A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
passivation layer
device package
dielectric
connection pads
Prior art date
Application number
SG2011090644A
Other languages
English (en)
Inventor
Richard Alfred Beaupre
Paul Alan Mcconnelee
Arun Virupaksha Gowda
Thomas Bert Gorczyca
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SG182076A1 publication Critical patent/SG182076A1/en

Links

Classifications

    • H10W74/137—
    • H10W72/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10W70/09—
    • H10W70/60—
    • H10W74/00—
    • H10W74/01—
    • H10W74/144—
    • H10W74/147—
    • H10W70/093—
    • H10W72/07131—
    • H10W72/073—
    • H10W90/00—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
SG2011090644A 2010-12-08 2011-12-07 Semiconductor device package and method of manufacturing thereof SG182076A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/962,761 US8310040B2 (en) 2010-12-08 2010-12-08 Semiconductor device package having high breakdown voltage and low parasitic inductance and method of manufacturing thereof

Publications (1)

Publication Number Publication Date
SG182076A1 true SG182076A1 (en) 2012-07-30

Family

ID=45002829

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011090644A SG182076A1 (en) 2010-12-08 2011-12-07 Semiconductor device package and method of manufacturing thereof

Country Status (8)

Country Link
US (2) US8310040B2 (enExample)
EP (1) EP2463901B1 (enExample)
JP (1) JP5926547B2 (enExample)
KR (1) KR101944477B1 (enExample)
CN (1) CN102543946B (enExample)
PH (1) PH12011000403A1 (enExample)
SG (1) SG182076A1 (enExample)
TW (1) TWI544590B (enExample)

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* Cited by examiner, † Cited by third party
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US8431438B2 (en) 2010-04-06 2013-04-30 Intel Corporation Forming in-situ micro-feature structures with coreless packages
US9209151B2 (en) 2013-09-26 2015-12-08 General Electric Company Embedded semiconductor device package and method of manufacturing thereof
US9806051B2 (en) 2014-03-04 2017-10-31 General Electric Company Ultra-thin embedded semiconductor device package and method of manufacturing thereof
KR101978027B1 (ko) * 2014-05-15 2019-05-13 인텔 코포레이션 집적 회로 조립체용 성형 복합 인클로저
JP6573876B2 (ja) * 2014-05-29 2019-09-11 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 空隙形成用組成物、その組成物を用いて形成された空隙を具備した半導体装置、およびその組成物を用いた半導体装置の製造方法
EP3065164A1 (en) * 2015-03-04 2016-09-07 ABB Technology AG Power semiconductor arrangement and method of generating a power semiconductor arrangement
WO2020014499A1 (en) * 2018-07-13 2020-01-16 Array Photonics, Inc. Dual-depth via device and process for large back contact solar cells
DE102020135088A1 (de) * 2020-03-27 2021-09-30 Samsung Electronics Co., Ltd. Halbleitervorrichtung
CN113517205A (zh) * 2020-04-27 2021-10-19 台湾积体电路制造股份有限公司 半导体器件及其形成方法
US11699663B2 (en) 2020-04-27 2023-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Passivation scheme design for wafer singulation
CN115939222B (zh) * 2022-11-24 2025-10-17 湖南三安半导体有限责任公司 半导体器件及其制备方法
CN116936592A (zh) * 2023-07-24 2023-10-24 华天科技（昆山）电子有限公司 一种高可靠性的cis芯片封装结构及方法

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US4198444A (en) * 1975-08-04 1980-04-15 General Electric Company Method for providing substantially hermetic sealing means for electronic components
US4249299A (en) * 1979-03-05 1981-02-10 Hughes Aircraft Company Edge-around leads for backside connections to silicon circuit die
US5161093A (en) 1990-07-02 1992-11-03 General Electric Company Multiple lamination high density interconnect process and structure employing a variable crosslinking adhesive
JP3453390B2 (ja) * 1996-10-08 2003-10-06 日立化成工業株式会社 半導体装置、半導体チップ搭載用基板及びその製造法
US6376908B1 (en) * 1997-12-10 2002-04-23 Mitsubishi Gas Chemical Company, Inc. Semiconductor plastic package and process for the production thereof
US6239980B1 (en) 1998-08-31 2001-05-29 General Electric Company Multimodule interconnect structure and process
US6306680B1 (en) 1999-02-22 2001-10-23 General Electric Company Power overlay chip scale packages for discrete power devices
JP3602000B2 (ja) * 1999-04-26 2004-12-15 沖電気工業株式会社 半導体装置および半導体モジュール
US6232151B1 (en) 1999-11-01 2001-05-15 General Electric Company Power electronic module packaging
JP4454814B2 (ja) * 2000-08-29 2010-04-21 Ｎｅｃエレクトロニクス株式会社 樹脂封止型半導体装置及びその製造方法
US7633765B1 (en) * 2004-03-23 2009-12-15 Amkor Technology, Inc. Semiconductor package including a top-surface metal layer for implementing circuit features
US7262444B2 (en) 2005-08-17 2007-08-28 General Electric Company Power semiconductor packaging method and structure
JP5033682B2 (ja) * 2008-03-12 2012-09-26 株式会社テラミクロス 半導体素子およびその製造方法並びに半導体装置およびその製造方法
WO2009156970A1 (en) * 2008-06-26 2009-12-30 Nxp B.V. Packaged semiconductor product and method for manufacture thereof
TW201101547A (en) * 2009-06-23 2011-01-01 Univ Kun Shan Packaging structure of light emitting diode

Also Published As

Publication number Publication date
EP2463901A2 (en) 2012-06-13
EP2463901A3 (en) 2012-08-29
US8310040B2 (en) 2012-11-13
EP2463901B1 (en) 2018-06-13
TW201246475A (en) 2012-11-16
PH12011000403A1 (en) 2014-07-23
US8586421B2 (en) 2013-11-19
US20120329207A1 (en) 2012-12-27
US20120146234A1 (en) 2012-06-14
CN102543946A (zh) 2012-07-04
JP2012124486A (ja) 2012-06-28
JP5926547B2 (ja) 2016-05-25
TWI544590B (zh) 2016-08-01
CN102543946B (zh) 2016-12-07
KR20120089993A (ko) 2012-08-16
KR101944477B1 (ko) 2019-01-31

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