SG171511A1 - Method for producing a single crystal composed of silicon by remelting granules - Google Patents

Method for producing a single crystal composed of silicon by remelting granules

Info

Publication number
SG171511A1
SG171511A1 SG201006688-4A SG2010066884A SG171511A1 SG 171511 A1 SG171511 A1 SG 171511A1 SG 2010066884 A SG2010066884 A SG 2010066884A SG 171511 A1 SG171511 A1 SG 171511A1
Authority
SG
Singapore
Prior art keywords
single crystal
silicon
plate
producing
tube
Prior art date
Application number
SG201006688-4A
Other languages
English (en)
Inventor
Wilfried Von Ammon
Ludwig Altmannshofer
Martin Wasner
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG171511A1 publication Critical patent/SG171511A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SG201006688-4A 2009-11-11 2010-09-15 Method for producing a single crystal composed of silicon by remelting granules SG171511A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009052745A DE102009052745A1 (de) 2009-11-11 2009-11-11 Verfahren zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat

Publications (1)

Publication Number Publication Date
SG171511A1 true SG171511A1 (en) 2011-06-29

Family

ID=43128203

Family Applications (2)

Application Number Title Priority Date Filing Date
SG201006688-4A SG171511A1 (en) 2009-11-11 2010-09-15 Method for producing a single crystal composed of silicon by remelting granules
SG2013024112A SG189726A1 (en) 2009-11-11 2010-09-15 Method for producing a single crystal composed of silicon by remelting granules

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013024112A SG189726A1 (en) 2009-11-11 2010-09-15 Method for producing a single crystal composed of silicon by remelting granules

Country Status (10)

Country Link
US (1) US8834627B2 (ja)
EP (1) EP2322695B1 (ja)
JP (1) JP5183719B2 (ja)
KR (1) KR101294453B1 (ja)
CN (1) CN102061512B (ja)
AT (1) ATE534758T1 (ja)
DE (1) DE102009052745A1 (ja)
DK (1) DK2322695T3 (ja)
SG (2) SG171511A1 (ja)
TW (1) TWI424101B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012215677B3 (de) * 2012-09-04 2013-10-10 Siltronic Ag Verfahren zum Herstellen eines Einkristalls aus Silizium
DE102014207149A1 (de) * 2014-04-14 2015-10-29 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102014210936B3 (de) * 2014-06-06 2015-10-22 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
DE102017202420A1 (de) * 2017-02-15 2018-08-16 Siltronic Ag Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren
CN116288650B (zh) * 2023-05-24 2023-08-29 苏州晨晖智能设备有限公司 以颗粒硅为原料的硅单晶生长装置和生长方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
JP3053958B2 (ja) * 1992-04-10 2000-06-19 光弘 丸山 浮遊帯溶融法による結晶の製造装置
DE19538020A1 (de) * 1995-10-12 1997-04-17 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium
JP3644227B2 (ja) 1997-12-22 2005-04-27 信越半導体株式会社 シリコン単結晶の製造方法及び製造装置
JPH11292682A (ja) * 1998-04-02 1999-10-26 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法および製造装置
DE10204178B4 (de) * 2002-02-01 2008-01-03 Siltronic Ag Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial
TWM246495U (en) * 2003-10-31 2004-10-11 Hon Hai Prec Ind Co Ltd Automatic apparatus for assembling bearig to motor
DE102008013326B4 (de) 2008-03-10 2013-03-28 Siltronic Ag Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial
CA2795395C (en) * 2010-04-13 2018-05-29 Schmid Silicon Technology Gmbh Production of monocrystalline semiconductor materials

Also Published As

Publication number Publication date
JP2011102234A (ja) 2011-05-26
EP2322695B1 (de) 2011-11-23
US8834627B2 (en) 2014-09-16
KR101294453B1 (ko) 2013-08-07
CN102061512A (zh) 2011-05-18
SG189726A1 (en) 2013-05-31
TWI424101B (zh) 2014-01-21
EP2322695A1 (de) 2011-05-18
JP5183719B2 (ja) 2013-04-17
DE102009052745A1 (de) 2011-05-12
CN102061512B (zh) 2013-12-11
US20110107960A1 (en) 2011-05-12
KR20110052501A (ko) 2011-05-18
DK2322695T3 (da) 2012-02-27
ATE534758T1 (de) 2011-12-15
TW201132810A (en) 2011-10-01

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