SG163481A1 - Method for manufacturing soi substrate and semiconductor device - Google Patents

Method for manufacturing soi substrate and semiconductor device

Info

Publication number
SG163481A1
SG163481A1 SG201000047-9A SG2010000479A SG163481A1 SG 163481 A1 SG163481 A1 SG 163481A1 SG 2010000479 A SG2010000479 A SG 2010000479A SG 163481 A1 SG163481 A1 SG 163481A1
Authority
SG
Singapore
Prior art keywords
single crystal
crystal semiconductor
substrate
semiconductor layer
semiconductor substrate
Prior art date
Application number
SG201000047-9A
Other languages
English (en)
Inventor
Kosei Noda
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG163481A1 publication Critical patent/SG163481A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
SG201000047-9A 2009-01-21 2010-01-05 Method for manufacturing soi substrate and semiconductor device SG163481A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009011425 2009-01-21

Publications (1)

Publication Number Publication Date
SG163481A1 true SG163481A1 (en) 2010-08-30

Family

ID=42337296

Family Applications (2)

Application Number Title Priority Date Filing Date
SG201000047-9A SG163481A1 (en) 2009-01-21 2010-01-05 Method for manufacturing soi substrate and semiconductor device
SG2012008991A SG178765A1 (en) 2009-01-21 2010-01-05 Method for manufacturing soi substrate and semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012008991A SG178765A1 (en) 2009-01-21 2010-01-05 Method for manufacturing soi substrate and semiconductor device

Country Status (4)

Country Link
US (2) US8053332B2 (https=)
JP (1) JP5667767B2 (https=)
KR (1) KR101661705B1 (https=)
SG (2) SG163481A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101570917B1 (ko) 2011-04-11 2015-11-20 에베 그룹 에. 탈너 게엠베하 가요성의 캐리어 마운트 및 캐리어 기판을 분리하기 위한 장치 및 방법
FR2978604B1 (fr) * 2011-07-28 2018-09-14 Soitec Procede de guerison de defauts dans une couche semi-conductrice
JP5797504B2 (ja) * 2011-09-16 2015-10-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2795669B1 (de) 2011-12-22 2020-06-17 EV Group E. Thallner GmbH Biegsame substrathalterung, vorrichtung und verfahren zum lösen eines ersten substrats
WO2014022681A1 (en) 2012-08-01 2014-02-06 Gentex Corporation Assembly with laser induced channel edge and method thereof
US9029809B2 (en) * 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
WO2021241448A1 (ja) * 2020-05-29 2021-12-02 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254532A (ja) * 1988-08-17 1990-02-23 Sony Corp Ｓｏｉ基板の製造方法
US5166097A (en) * 1990-11-26 1992-11-24 The Boeing Company Silicon wafers containing conductive feedthroughs
JP3649797B2 (ja) * 1995-12-01 2005-05-18 株式会社半導体エネルギー研究所 半導体装置製造方法
JP3324469B2 (ja) * 1997-09-26 2002-09-17 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5968847A (en) * 1998-03-13 1999-10-19 Applied Materials, Inc. Process for copper etch back
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
US6423644B1 (en) * 2000-07-12 2002-07-23 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
KR100567885B1 (ko) * 2003-12-30 2006-04-04 동부아남반도체 주식회사 반도체 소자의 실리사이드막 제조 방법
JP5110772B2 (ja) * 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
JP2005251912A (ja) * 2004-03-03 2005-09-15 Seiko Epson Corp 複合半導体基板の製造方法、複合半導体基板、電気光学装置および電子機器
JP5127176B2 (ja) * 2005-07-29 2013-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN101281912B (zh) * 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置
KR101400699B1 (ko) * 2007-05-18 2014-05-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판 및 반도체 장치 및 그 제조 방법
JP5415676B2 (ja) * 2007-05-30 2014-02-12 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
CN101681807B (zh) * 2007-06-01 2012-03-14 株式会社半导体能源研究所 半导体器件的制造方法
JP5527956B2 (ja) * 2007-10-10 2014-06-25 株式会社半導体エネルギー研究所 半導体基板の製造方法
US8101501B2 (en) * 2007-10-10 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
US8093136B2 (en) * 2007-12-28 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate

Also Published As

Publication number Publication date
US20120077330A1 (en) 2012-03-29
SG178765A1 (en) 2012-03-29
KR101661705B1 (ko) 2016-09-30
KR20100085840A (ko) 2010-07-29
JP2010192884A (ja) 2010-09-02
US8338270B2 (en) 2012-12-25
US20100184269A1 (en) 2010-07-22
JP5667767B2 (ja) 2015-02-12
US8053332B2 (en) 2011-11-08

Similar Documents

Publication Publication Date Title
SG163481A1 (en) Method for manufacturing soi substrate and semiconductor device
TW200943476A (en) Manufacturing method of SOI substrate
SG161151A1 (en) Soi substrate and method for manufacturing the same
TW200943477A (en) Method for manufacturing SOI substrate
US11201081B2 (en) Method for separating thin layers of solid material from a solid body
TW200943495A (en) Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device
TW200943478A (en) Method for manufacturing SOI substrate and semiconductor device
SG166738A1 (en) Method for manufacturing soi substrate and soi substrate
WO2007109568A3 (en) Method and structure for fabricating solar cells
SG160300A1 (en) Method for manufacturing soi substrate
MX2014005549A (es) Union de vidrio-vidrio, vidrio-plastico y vidrio-ceramica-semiconductor a temperatura ambiente.
JP2008311621A5 (https=)
JP2009135437A5 (https=)
TW200943387A (en) Method for manufacturing SOI substrate
JP2009158943A5 (https=)
WO2008058131A3 (en) Method and structure for thick layer transfer using a linear accelerator
JP2010034535A5 (https=)
JP2009212502A5 (https=)
WO2006112995A3 (en) Glass-based semiconductor on insulator structures and methods of making same
JP2009260315A5 (https=)
WO2011129548A3 (en) Substrate assembly for crystal growth and fabricating method for light emitting device using the same
SG139678A1 (en) Method for producing bonded wafer
WO2011159737A3 (en) Systems, methods and products involving aspects of laser irradiation, cleaving, and/or bonding silicon-containing material to substrates
JP2008292997A5 (https=)
SG160302A1 (en) Method for manufacturing semiconductor substrate