SG162695A1 - Annealed wafer and method for producing annealed wafer - Google Patents

Annealed wafer and method for producing annealed wafer

Info

Publication number
SG162695A1
SG162695A1 SG200908406-2A SG2009084062A SG162695A1 SG 162695 A1 SG162695 A1 SG 162695A1 SG 2009084062 A SG2009084062 A SG 2009084062A SG 162695 A1 SG162695 A1 SG 162695A1
Authority
SG
Singapore
Prior art keywords
annealed wafer
producing
temperature
annealing
wafer
Prior art date
Application number
SG200908406-2A
Other languages
English (en)
Inventor
Kazunori Ishisaka
Dr Katsuhiko Nakai
Masayuki Fukuda
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG162695A1 publication Critical patent/SG162695A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG200908406-2A 2008-12-18 2009-12-17 Annealed wafer and method for producing annealed wafer SG162695A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008322874A JP2010147248A (ja) 2008-12-18 2008-12-18 アニールウェハおよびアニールウェハの製造方法

Publications (1)

Publication Number Publication Date
SG162695A1 true SG162695A1 (en) 2010-07-29

Family

ID=41514052

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200908406-2A SG162695A1 (en) 2008-12-18 2009-12-17 Annealed wafer and method for producing annealed wafer

Country Status (7)

Country Link
US (1) US20100155903A1 (fr)
EP (1) EP2199435A1 (fr)
JP (1) JP2010147248A (fr)
KR (1) KR20100070989A (fr)
CN (1) CN101748491A (fr)
SG (1) SG162695A1 (fr)
TW (1) TW201024479A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101231412B1 (ko) * 2009-12-29 2013-02-07 실트로닉 아게 실리콘 웨이퍼 및 그 제조 방법
JP5194146B2 (ja) 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
JP5997552B2 (ja) * 2011-09-27 2016-09-28 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
CN103094316B (zh) * 2013-01-25 2016-01-20 浙江大学 一种具有高金属吸杂能力的n/n+硅外延片及其制备方法
JP6421611B2 (ja) * 2014-01-29 2018-11-14 三菱マテリアル株式会社 プラズマ処理装置用電極板及びその製造方法
JP6119637B2 (ja) * 2014-02-26 2017-04-26 信越半導体株式会社 アニール基板の製造方法、及び半導体装置の製造方法
CN105280491A (zh) * 2015-06-17 2016-01-27 上海超硅半导体有限公司 硅片及制造方法
CN105297140B (zh) * 2015-09-10 2019-10-25 上海超硅半导体有限公司 硅片及退火处理方法
JP6711320B2 (ja) 2017-06-26 2020-06-17 株式会社Sumco シリコンウェーハ
CN108110046A (zh) * 2017-12-20 2018-06-01 中国工程物理研究院电子工程研究所 基于氧沉淀抑制位移辐照损伤的直拉硅衬底及其制备方法
CN115224155B (zh) * 2022-06-09 2024-02-23 东莞南玻光伏科技有限公司 硅片内除杂的方法和系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6517632B2 (en) * 2000-01-17 2003-02-11 Toshiba Ceramics Co., Ltd. Method of fabricating a single crystal ingot and method of fabricating a silicon wafer
US7201800B2 (en) * 2001-12-21 2007-04-10 Memc Electronic Materials, Inc. Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
JP2005051040A (ja) * 2003-07-29 2005-02-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体基板
JP2005050942A (ja) * 2003-07-31 2005-02-24 Sumitomo Mitsubishi Silicon Corp シリコンウェーハ及びその製造方法
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP2007220825A (ja) * 2006-02-15 2007-08-30 Sumco Corp シリコンウェーハの製造方法
DE602007004173D1 (de) * 2006-12-01 2010-02-25 Siltronic Ag Silicium-Wafer und dessen Herstellungsmethode

Also Published As

Publication number Publication date
TW201024479A (en) 2010-07-01
EP2199435A1 (fr) 2010-06-23
JP2010147248A (ja) 2010-07-01
CN101748491A (zh) 2010-06-23
US20100155903A1 (en) 2010-06-24
KR20100070989A (ko) 2010-06-28

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