SG149790A1 - Plasma reactor with reduced electrical skew using electrical bypass elements - Google Patents

Plasma reactor with reduced electrical skew using electrical bypass elements

Info

Publication number
SG149790A1
SG149790A1 SG200805595-6A SG2008055956A SG149790A1 SG 149790 A1 SG149790 A1 SG 149790A1 SG 2008055956 A SG2008055956 A SG 2008055956A SG 149790 A1 SG149790 A1 SG 149790A1
Authority
SG
Singapore
Prior art keywords
electrical
current flow
plasma reactor
skew
bypass elements
Prior art date
Application number
SG200805595-6A
Other languages
English (en)
Inventor
Shahid Rauf
Kenneth S Collins
Kallol Bera
Kartik Ramaswamy
Hiroji Hanawa
Andrew Nguyen
Steven C Shannon
Lawrence Wong
Satoru Kobayashi
Troy S Detrick
James P Cruse
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG149790A1 publication Critical patent/SG149790A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
SG200805595-6A 2007-07-26 2008-07-28 Plasma reactor with reduced electrical skew using electrical bypass elements SG149790A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/828,568 US7988815B2 (en) 2007-07-26 2007-07-26 Plasma reactor with reduced electrical skew using electrical bypass elements

Publications (1)

Publication Number Publication Date
SG149790A1 true SG149790A1 (en) 2009-02-27

Family

ID=40294221

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200805595-6A SG149790A1 (en) 2007-07-26 2008-07-28 Plasma reactor with reduced electrical skew using electrical bypass elements

Country Status (6)

Country Link
US (1) US7988815B2 (https=)
JP (1) JP2009076870A (https=)
KR (1) KR100984776B1 (https=)
CN (1) CN101355004B (https=)
SG (1) SG149790A1 (https=)
TW (1) TWI358738B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201703432XA (en) 2007-04-27 2017-06-29 Applied Materials Inc Annular baffle
JP5490435B2 (ja) * 2009-03-31 2014-05-14 東京エレクトロン株式会社 ゲートバルブ装置
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US8578879B2 (en) * 2009-07-29 2013-11-12 Applied Materials, Inc. Apparatus for VHF impedance match tuning
KR102285582B1 (ko) * 2009-08-31 2021-08-03 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ­전력공급 샤워헤드를 위한 편심 접지 복귀
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8920597B2 (en) 2010-08-20 2014-12-30 Applied Materials, Inc. Symmetric VHF source for a plasma reactor
CN107452592B (zh) 2011-05-31 2019-11-12 应用材料公司 边缘保护板、边缘保护组件以及用于处理基板的设备
KR101297264B1 (ko) * 2011-08-31 2013-08-16 (주)젠 이중 유도 결합 플라즈마 소스를 갖는 플라즈마 반응기
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
TW201405627A (zh) * 2012-07-20 2014-02-01 Applied Materials Inc 具有同軸ｒｆ饋送及同軸遮罩之對稱的感應性耦合電漿源
US10103018B2 (en) * 2012-07-31 2018-10-16 Semes Co., Ltd. Apparatus for treating substrate
CN103323981A (zh) * 2013-05-24 2013-09-25 北京京东方光电科技有限公司 一种显示面板及其制造方法、显示装置
US9412563B2 (en) * 2013-09-13 2016-08-09 Applied Materials, Inc. Spatially discrete multi-loop RF-driven plasma source having plural independent zones
US20150075717A1 (en) * 2013-09-13 2015-03-19 Applied Materials, Inc. Inductively coupled spatially discrete multi-loop rf-driven plasma source
JP2015162266A (ja) * 2014-02-26 2015-09-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101792941B1 (ko) * 2015-04-30 2017-11-02 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 화학기상증착장치 및 그 세정방법
US11469085B2 (en) * 2016-12-27 2022-10-11 Evatec Ag Vacuum plasma workpiece treatment apparatus
JP2019009185A (ja) * 2017-06-21 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
TWI677895B (zh) * 2017-10-30 2019-11-21 台灣積體電路製造股份有限公司 電漿設備及電漿設備監測方法
CN109727837B (zh) * 2017-10-30 2021-11-23 台湾积体电路制造股份有限公司 等离子体设备及等离子体设备监测方法
CN112955997B (zh) * 2018-11-21 2024-04-05 应用材料公司 用于使用相位控制来调整等离子体分布的设备及方法
US20210066051A1 (en) * 2019-08-28 2021-03-04 Applied Materials, Inc. High conductance lower shield for process chamber
USD931241S1 (en) 2019-08-28 2021-09-21 Applied Materials, Inc. Lower shield for a substrate processing chamber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5210466A (en) * 1989-10-03 1993-05-11 Applied Materials, Inc. VHF/UHF reactor system
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
JP2001077088A (ja) * 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6296747B1 (en) 2000-06-22 2001-10-02 Applied Materials, Inc. Baffled perforated shield in a plasma sputtering reactor
JP2002270598A (ja) 2001-03-13 2002-09-20 Tokyo Electron Ltd プラズマ処理装置
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor

Also Published As

Publication number Publication date
TW200921742A (en) 2009-05-16
JP2009076870A (ja) 2009-04-09
TWI358738B (en) 2012-02-21
CN101355004A (zh) 2009-01-28
KR20090012169A (ko) 2009-02-02
KR100984776B1 (ko) 2010-10-04
CN101355004B (zh) 2010-09-08
US20090025878A1 (en) 2009-01-29
US7988815B2 (en) 2011-08-02

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