CN101355004B - 用电旁路元件减小电歪斜的等离子体反应器 - Google Patents

用电旁路元件减小电歪斜的等离子体反应器 Download PDF

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Publication number
CN101355004B
CN101355004B CN2008101346270A CN200810134627A CN101355004B CN 101355004 B CN101355004 B CN 101355004B CN 2008101346270 A CN2008101346270 A CN 2008101346270A CN 200810134627 A CN200810134627 A CN 200810134627A CN 101355004 B CN101355004 B CN 101355004B
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CN
China
Prior art keywords
sidewall
reactor
base
axial
slit valve
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Expired - Fee Related
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CN2008101346270A
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English (en)
Chinese (zh)
Other versions
CN101355004A (zh
Inventor
沙希德·劳夫
肯尼思·S·柯林斯
卡洛·贝拉
卡尔蒂克·贾亚拉曼
塙广二
安德鲁·源
史蒂文·C·香农
劳伦斯·黄
小林聪
特洛伊·S·德特里克
詹姆斯·P·克鲁斯
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN101355004A publication Critical patent/CN101355004A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CN2008101346270A 2007-07-26 2008-07-28 用电旁路元件减小电歪斜的等离子体反应器 Expired - Fee Related CN101355004B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/828,568 US7988815B2 (en) 2007-07-26 2007-07-26 Plasma reactor with reduced electrical skew using electrical bypass elements
US11/828,568 2007-07-26

Publications (2)

Publication Number Publication Date
CN101355004A CN101355004A (zh) 2009-01-28
CN101355004B true CN101355004B (zh) 2010-09-08

Family

ID=40294221

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101346270A Expired - Fee Related CN101355004B (zh) 2007-07-26 2008-07-28 用电旁路元件减小电歪斜的等离子体反应器

Country Status (6)

Country Link
US (1) US7988815B2 (https=)
JP (1) JP2009076870A (https=)
KR (1) KR100984776B1 (https=)
CN (1) CN101355004B (https=)
SG (1) SG149790A1 (https=)
TW (1) TWI358738B (https=)

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SG10201703432XA (en) 2007-04-27 2017-06-29 Applied Materials Inc Annular baffle
JP5490435B2 (ja) * 2009-03-31 2014-05-14 東京エレクトロン株式会社 ゲートバルブ装置
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US8578879B2 (en) * 2009-07-29 2013-11-12 Applied Materials, Inc. Apparatus for VHF impedance match tuning
KR102285582B1 (ko) * 2009-08-31 2021-08-03 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ­전력공급 샤워헤드를 위한 편심 접지 복귀
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8920597B2 (en) 2010-08-20 2014-12-30 Applied Materials, Inc. Symmetric VHF source for a plasma reactor
CN107452592B (zh) 2011-05-31 2019-11-12 应用材料公司 边缘保护板、边缘保护组件以及用于处理基板的设备
KR101297264B1 (ko) * 2011-08-31 2013-08-16 (주)젠 이중 유도 결합 플라즈마 소스를 갖는 플라즈마 반응기
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
TW201405627A (zh) * 2012-07-20 2014-02-01 Applied Materials Inc 具有同軸ｒｆ饋送及同軸遮罩之對稱的感應性耦合電漿源
US10103018B2 (en) * 2012-07-31 2018-10-16 Semes Co., Ltd. Apparatus for treating substrate
CN103323981A (zh) * 2013-05-24 2013-09-25 北京京东方光电科技有限公司 一种显示面板及其制造方法、显示装置
US9412563B2 (en) * 2013-09-13 2016-08-09 Applied Materials, Inc. Spatially discrete multi-loop RF-driven plasma source having plural independent zones
US20150075717A1 (en) * 2013-09-13 2015-03-19 Applied Materials, Inc. Inductively coupled spatially discrete multi-loop rf-driven plasma source
JP2015162266A (ja) * 2014-02-26 2015-09-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101792941B1 (ko) * 2015-04-30 2017-11-02 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 화학기상증착장치 및 그 세정방법
US11469085B2 (en) * 2016-12-27 2022-10-11 Evatec Ag Vacuum plasma workpiece treatment apparatus
JP2019009185A (ja) * 2017-06-21 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
TWI677895B (zh) * 2017-10-30 2019-11-21 台灣積體電路製造股份有限公司 電漿設備及電漿設備監測方法
CN109727837B (zh) * 2017-10-30 2021-11-23 台湾积体电路制造股份有限公司 等离子体设备及等离子体设备监测方法
CN112955997B (zh) * 2018-11-21 2024-04-05 应用材料公司 用于使用相位控制来调整等离子体分布的设备及方法
US20210066051A1 (en) * 2019-08-28 2021-03-04 Applied Materials, Inc. High conductance lower shield for process chamber
USD931241S1 (en) 2019-08-28 2021-09-21 Applied Materials, Inc. Lower shield for a substrate processing chamber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5210466A (en) * 1989-10-03 1993-05-11 Applied Materials, Inc. VHF/UHF reactor system
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
JP2001077088A (ja) * 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6296747B1 (en) 2000-06-22 2001-10-02 Applied Materials, Inc. Baffled perforated shield in a plasma sputtering reactor
JP2002270598A (ja) 2001-03-13 2002-09-20 Tokyo Electron Ltd プラズマ処理装置
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor

Also Published As

Publication number Publication date
TW200921742A (en) 2009-05-16
JP2009076870A (ja) 2009-04-09
TWI358738B (en) 2012-02-21
CN101355004A (zh) 2009-01-28
KR20090012169A (ko) 2009-02-02
KR100984776B1 (ko) 2010-10-04
SG149790A1 (en) 2009-02-27
US20090025878A1 (en) 2009-01-29
US7988815B2 (en) 2011-08-02

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Granted publication date: 20100908

Termination date: 20120728