SG149764A1 - Precursor compositions and methods - Google Patents
Precursor compositions and methodsInfo
- Publication number
- SG149764A1 SG149764A1 SG200805243-3A SG2008052433A SG149764A1 SG 149764 A1 SG149764 A1 SG 149764A1 SG 2008052433 A SG2008052433 A SG 2008052433A SG 149764 A1 SG149764 A1 SG 149764A1
- Authority
- SG
- Singapore
- Prior art keywords
- compositions
- methods
- precursor
- precursor compositions
- amido
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 5
- 239000002243 precursor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000007740 vapor deposition Methods 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 125000003368 amide group Chemical group 0.000 abstract 1
- 238000000231 atomic layer deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/66—Arsenic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US95934907P | 2007-07-13 | 2007-07-13 | |
US12/074,373 US8142847B2 (en) | 2007-07-13 | 2008-03-03 | Precursor compositions and methods |
Publications (1)
Publication Number | Publication Date |
---|---|
SG149764A1 true SG149764A1 (en) | 2009-02-27 |
Family
ID=39951507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200805243-3A SG149764A1 (en) | 2007-07-13 | 2008-07-11 | Precursor compositions and methods |
Country Status (7)
Country | Link |
---|---|
US (2) | US8142847B2 (zh) |
EP (1) | EP2017368B1 (zh) |
JP (1) | JP5339580B2 (zh) |
KR (1) | KR101498499B1 (zh) |
CN (1) | CN101440477B (zh) |
SG (1) | SG149764A1 (zh) |
TW (1) | TWI374943B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100016477A (ko) * | 2007-04-12 | 2010-02-12 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Ald/cvd용의 지르코늄, 하프늄, 티타늄 및 규소 전구체 |
JP5437594B2 (ja) * | 2007-06-05 | 2014-03-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
KR101576033B1 (ko) * | 2008-08-19 | 2015-12-11 | 삼성전자주식회사 | 전구체 조성물, 박막 형성 방법, 이를 이용한 게이트 구조물의 제조 방법 및 커패시터의 제조 방법 |
US20110045183A1 (en) * | 2009-08-18 | 2011-02-24 | Youn-Joung Cho | Methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor |
US8563085B2 (en) | 2009-08-18 | 2013-10-22 | Samsung Electronics Co., Ltd. | Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor |
JP6202798B2 (ja) | 2011-10-12 | 2017-09-27 | エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. | 酸化アンチモン膜の原子層堆積 |
US11319452B2 (en) * | 2013-06-06 | 2022-05-03 | President And Fellows Of Harvard College | Vapor source using solutions of precursors in tertiary amines |
WO2016088500A1 (ja) * | 2014-12-02 | 2016-06-09 | 宇部興産株式会社 | 金属炭窒化膜又は半金属炭窒化膜の製造方法、金属炭窒化膜又は半金属炭窒化膜及び金属炭窒化膜又は半金属炭窒化膜の製造装置 |
CN107923039B (zh) | 2015-05-27 | 2021-06-29 | Asm Ip 控股有限公司 | 用于含钼或钨薄膜的ald的前体的合成和用途 |
US9809490B2 (en) | 2015-07-02 | 2017-11-07 | Panasonic Intellectual Property Management Co., Ltd. | Method for producing oxynitride film by atomic layer deposition process |
US10023462B2 (en) * | 2015-11-30 | 2018-07-17 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films |
US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
TW201812071A (zh) * | 2016-06-13 | 2018-04-01 | 應用材料股份有限公司 | 用於沉積鑭、氧化鑭及氮化鑭薄膜之鑭前驅物 |
TWI742092B (zh) * | 2016-06-13 | 2021-10-11 | 美商應用材料股份有限公司 | 用於ald、cvd與薄膜摻雜之鑭系、釔與鈧前驅物及使用方法 |
US10358407B2 (en) | 2016-10-12 | 2019-07-23 | Asm Ip Holding B.V. | Synthesis and use of precursors for vapor deposition of tungsten containing thin films |
US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
JP2022523689A (ja) | 2019-01-28 | 2022-04-26 | ラム リサーチ コーポレーション | 金属膜の蒸着 |
WO2020185618A1 (en) | 2019-03-11 | 2020-09-17 | Lam Research Corporation | Precursors for deposition of molybdenum-containing films |
US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
KR20210048408A (ko) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 증착 반응기 매니폴드 |
TW202136571A (zh) | 2020-02-10 | 2021-10-01 | 荷蘭商Asm Ip 控股公司 | 高深寬比孔內的氧化鉿之沉積 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
US4506815A (en) | 1982-12-09 | 1985-03-26 | Thiokol Corporation | Bubbler cylinder and dip tube device |
DE69027496T2 (de) | 1989-09-26 | 1996-10-31 | Canon Kk | Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage |
KR100279067B1 (ko) * | 1998-04-23 | 2001-01-15 | 신현국 | 화학증착용알루미늄화합물및그제조방법 |
US6444038B1 (en) | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
DE60106675T2 (de) | 2000-05-31 | 2005-12-01 | Shipley Co., L.L.C., Marlborough | Verdampfer |
CN102312214B (zh) | 2002-11-15 | 2013-10-23 | 哈佛学院院长等 | 使用脒基金属的原子层沉积 |
DE602004014258D1 (de) | 2003-03-17 | 2008-07-17 | Sigma Aldrich Co | Alkoholate der seltenerdmetalle als vorstufen für metalloxidschichten und -filme |
US6960675B2 (en) * | 2003-10-14 | 2005-11-01 | Advanced Technology Materials, Inc. | Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
KR20050091488A (ko) | 2004-03-12 | 2005-09-15 | 주식회사 유피케미칼 | 세라믹 또는 금속박막 증착용 전구체 화합물 및 그제조방법 |
US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
TW200625431A (en) * | 2004-08-16 | 2006-07-16 | Aviza Tech Inc | Direct liquid injection system and method for forming multi-component dielectric films |
JP4738775B2 (ja) | 2004-08-24 | 2011-08-03 | 株式会社豊島製作所 | ランタニド系金属含有薄膜製造に用いるcvd用原料溶液及びこれを用いた薄膜の製造方法 |
US7514119B2 (en) * | 2005-04-29 | 2009-04-07 | Linde, Inc. | Method and apparatus for using solution based precursors for atomic layer deposition |
WO2007005088A2 (en) | 2005-07-01 | 2007-01-11 | Honeywell International Inc. | Vaporizable metalorganic compounds for deposition of metals and metal-containing thin films |
WO2007015436A1 (ja) | 2005-08-04 | 2007-02-08 | Tosoh Corporation | 金属含有化合物、その製造方法、金属含有薄膜及びその形成方法 |
CN101495672B (zh) * | 2006-11-02 | 2011-12-07 | 高级技术材料公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
KR20100016477A (ko) * | 2007-04-12 | 2010-02-12 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Ald/cvd용의 지르코늄, 하프늄, 티타늄 및 규소 전구체 |
-
2008
- 2008-03-03 US US12/074,373 patent/US8142847B2/en not_active Expired - Fee Related
- 2008-07-11 JP JP2008181005A patent/JP5339580B2/ja not_active Expired - Fee Related
- 2008-07-11 SG SG200805243-3A patent/SG149764A1/en unknown
- 2008-07-11 TW TW097126244A patent/TWI374943B/zh not_active IP Right Cessation
- 2008-07-11 EP EP08160264.1A patent/EP2017368B1/en not_active Expired - Fee Related
- 2008-07-11 CN CN2008101737842A patent/CN101440477B/zh not_active Expired - Fee Related
- 2008-07-14 KR KR1020080068215A patent/KR101498499B1/ko active IP Right Grant
-
2011
- 2011-08-06 US US13/204,654 patent/US20110287184A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2009079290A (ja) | 2009-04-16 |
CN101440477B (zh) | 2012-01-11 |
JP5339580B2 (ja) | 2013-11-13 |
US20110287184A1 (en) | 2011-11-24 |
EP2017368A2 (en) | 2009-01-21 |
US20090017208A1 (en) | 2009-01-15 |
US8142847B2 (en) | 2012-03-27 |
KR20090007245A (ko) | 2009-01-16 |
TWI374943B (en) | 2012-10-21 |
EP2017368A3 (en) | 2011-01-19 |
EP2017368B1 (en) | 2019-10-16 |
CN101440477A (zh) | 2009-05-27 |
TW200909440A (en) | 2009-03-01 |
KR101498499B1 (ko) | 2015-03-04 |
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