SG144051A1 - Method and device for producing semiconductor wafers of silicon - Google Patents
Method and device for producing semiconductor wafers of siliconInfo
- Publication number
- SG144051A1 SG144051A1 SG200718453-4A SG2007184534A SG144051A1 SG 144051 A1 SG144051 A1 SG 144051A1 SG 2007184534 A SG2007184534 A SG 2007184534A SG 144051 A1 SG144051 A1 SG 144051A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafers
- single crystal
- silicon
- melt
- producing semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006060359A DE102006060359B4 (de) | 2006-12-20 | 2006-12-20 | Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
SG144051A1 true SG144051A1 (en) | 2008-07-29 |
Family
ID=39431467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200718453-4A SG144051A1 (en) | 2006-12-20 | 2007-12-07 | Method and device for producing semiconductor wafers of silicon |
Country Status (7)
Country | Link |
---|---|
US (1) | US8172941B2 (de) |
JP (1) | JP4814207B2 (de) |
KR (1) | KR100945757B1 (de) |
CN (1) | CN101240444A (de) |
DE (1) | DE102006060359B4 (de) |
SG (1) | SG144051A1 (de) |
TW (1) | TWI372192B (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4710247B2 (ja) * | 2004-05-19 | 2011-06-29 | 株式会社Sumco | 単結晶製造装置及び方法 |
JP2006069841A (ja) * | 2004-09-02 | 2006-03-16 | Sumco Corp | 磁場印加式シリコン単結晶の引上げ方法 |
DE102009051010B4 (de) * | 2009-10-28 | 2012-02-23 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
DE102009057593A1 (de) * | 2009-12-09 | 2011-06-16 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010005100B4 (de) * | 2010-01-20 | 2016-07-14 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus Silizium mit einem Durchmesser von mindestens 450 mm |
DE102010023101B4 (de) * | 2010-06-09 | 2016-07-07 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus Silizium |
CN103114328B (zh) * | 2013-02-25 | 2015-10-07 | 天津市环欧半导体材料技术有限公司 | 8寸<110>磁场直拉单晶的制备方法 |
CN103103606A (zh) * | 2013-02-25 | 2013-05-15 | 天津市环欧半导体材料技术有限公司 | 一种制备8寸低氧单晶的方法 |
CN104711674B (zh) * | 2013-12-09 | 2017-06-06 | 有研半导体材料有限公司 | 一种减少直拉单晶硅内部微气孔密度的方法 |
DE102016219605A1 (de) | 2016-10-10 | 2018-04-12 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist |
CN106222737A (zh) * | 2016-10-17 | 2016-12-14 | 宁夏协鑫晶体科技发展有限公司 | 缩短单晶炉熔料时间装置及方法 |
CN108588830B (zh) * | 2018-07-26 | 2019-08-06 | 江苏金晖光伏有限公司 | 提纯太阳能级多晶硅的装置 |
CN109056063A (zh) * | 2018-08-29 | 2018-12-21 | 孟静 | 太阳能电池用多晶硅片的制备方法 |
CN109537045A (zh) * | 2018-12-29 | 2019-03-29 | 徐州晶睿半导体装备科技有限公司 | 用于硅晶锭生长的换热器、硅晶锭的生长炉和制备硅晶锭的方法 |
DE102019213236A1 (de) * | 2019-09-02 | 2021-03-04 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus einkristallinem Silizium |
JP2022548592A (ja) * | 2019-09-13 | 2022-11-21 | グローバルウェーハズ カンパニー リミテッド | 連続チョクラルスキー法を用いる窒素ドープ単結晶シリコンインゴットの成長方法およびこの方法により成長させた単結晶シリコンインゴット |
CN112349583A (zh) * | 2020-10-27 | 2021-02-09 | 西安奕斯伟硅片技术有限公司 | 硅片刻蚀方法、dosd检测方法及硅片刻蚀装置 |
EP4137613A1 (de) * | 2021-08-18 | 2023-02-22 | Siltronic AG | Verfahren zur herstellung einer epitaktisch beschichteten hableiterscheibe aus einkristallinem silizium |
CN113832537B (zh) * | 2021-09-30 | 2022-08-26 | 西安奕斯伟材料科技有限公司 | 石英坩埚及拉晶炉 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222984A (ja) | 1985-03-28 | 1986-10-03 | Toshiba Corp | 単結晶の製造装置 |
DE19503357A1 (de) | 1995-02-02 | 1996-08-08 | Wacker Siltronic Halbleitermat | Vorrichtung zur Herstellung eines Einkristalls |
JP3085146B2 (ja) * | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
DE19711922A1 (de) * | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
JP3228173B2 (ja) * | 1997-03-27 | 2001-11-12 | 住友金属工業株式会社 | 単結晶製造方法 |
JP2992988B2 (ja) * | 1997-11-06 | 1999-12-20 | 日本電気株式会社 | シリコン単結晶育成方法 |
JP2000239097A (ja) * | 1999-02-22 | 2000-09-05 | Sumitomo Metal Ind Ltd | 半導体用シリコン単結晶の引上げ方法 |
DE10102126A1 (de) * | 2001-01-18 | 2002-08-22 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium |
JP4236243B2 (ja) * | 2002-10-31 | 2009-03-11 | Sumco Techxiv株式会社 | シリコンウェーハの製造方法 |
DE10339792B4 (de) * | 2003-03-27 | 2014-02-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
JP4710247B2 (ja) | 2004-05-19 | 2011-06-29 | 株式会社Sumco | 単結晶製造装置及び方法 |
US7223304B2 (en) * | 2004-12-30 | 2007-05-29 | Memc Electronic Materials, Inc. | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
US7819972B2 (en) * | 2005-06-20 | 2010-10-26 | Sumco Corporation | Method for growing silicon single crystal and method for manufacturing silicon wafer |
US8152921B2 (en) * | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
DE102007005346B4 (de) * | 2007-02-02 | 2015-09-17 | Siltronic Ag | Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung |
-
2006
- 2006-12-20 DE DE102006060359A patent/DE102006060359B4/de not_active Expired - Fee Related
-
2007
- 2007-11-23 CN CNA2007101936606A patent/CN101240444A/zh active Pending
- 2007-11-30 KR KR1020070124005A patent/KR100945757B1/ko not_active IP Right Cessation
- 2007-12-07 TW TW096146837A patent/TWI372192B/zh not_active IP Right Cessation
- 2007-12-07 SG SG200718453-4A patent/SG144051A1/en unknown
- 2007-12-19 US US12/002,881 patent/US8172941B2/en not_active Expired - Fee Related
- 2007-12-20 JP JP2007328958A patent/JP4814207B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI372192B (en) | 2012-09-11 |
US20080153261A1 (en) | 2008-06-26 |
DE102006060359B4 (de) | 2013-09-05 |
JP2008156225A (ja) | 2008-07-10 |
JP4814207B2 (ja) | 2011-11-16 |
US8172941B2 (en) | 2012-05-08 |
CN101240444A (zh) | 2008-08-13 |
TW200829733A (en) | 2008-07-16 |
DE102006060359A1 (de) | 2008-06-26 |
KR100945757B1 (ko) | 2010-03-08 |
KR20080058177A (ko) | 2008-06-25 |
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