CN112349583A - 硅片刻蚀方法、dosd检测方法及硅片刻蚀装置 - Google Patents
硅片刻蚀方法、dosd检测方法及硅片刻蚀装置 Download PDFInfo
- Publication number
- CN112349583A CN112349583A CN202011162379.8A CN202011162379A CN112349583A CN 112349583 A CN112349583 A CN 112349583A CN 202011162379 A CN202011162379 A CN 202011162379A CN 112349583 A CN112349583 A CN 112349583A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- etching
- etched
- area
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 235
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 235
- 239000010703 silicon Substances 0.000 title claims abstract description 235
- 238000005530 etching Methods 0.000 title claims abstract description 161
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000001514 detection method Methods 0.000 title claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 55
- 238000004140 cleaning Methods 0.000 claims abstract description 27
- 238000001035 drying Methods 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 239000010949 copper Substances 0.000 claims description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- 230000007547 defect Effects 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000001179 sorption measurement Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 198
- 230000008021 deposition Effects 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011162379.8A CN112349583A (zh) | 2020-10-27 | 2020-10-27 | 硅片刻蚀方法、dosd检测方法及硅片刻蚀装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011162379.8A CN112349583A (zh) | 2020-10-27 | 2020-10-27 | 硅片刻蚀方法、dosd检测方法及硅片刻蚀装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112349583A true CN112349583A (zh) | 2021-02-09 |
Family
ID=74358538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011162379.8A Pending CN112349583A (zh) | 2020-10-27 | 2020-10-27 | 硅片刻蚀方法、dosd检测方法及硅片刻蚀装置 |
Country Status (1)
Country | Link |
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CN (1) | CN112349583A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113363183A (zh) * | 2021-05-21 | 2021-09-07 | 夏秋月 | 一种具有定时保护功能的湿法刻蚀用装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001185528A (ja) * | 1999-12-27 | 2001-07-06 | Minolta Co Ltd | エッチング用治具及びエッチング装置並びにエッチング方法 |
JP2005340734A (ja) * | 2004-05-31 | 2005-12-08 | Seiko Epson Corp | 半導体素子の製造方法及び半導体素子 |
US20080153261A1 (en) * | 2006-12-20 | 2008-06-26 | Siltronic Ag | Method and device for producing semiconductor wafers of silicon |
JP2011243783A (ja) * | 2010-05-19 | 2011-12-01 | Sumco Corp | 半導体ウェーハ評価方法、半導体ウェーハ評価用標準試料およびその作製方法 |
JP2014067773A (ja) * | 2012-09-25 | 2014-04-17 | Canon Inc | シリコン基板のエッチング方法 |
TW201417164A (zh) * | 2012-10-30 | 2014-05-01 | Motech Ind Inc | 濕式蝕刻方法與基板承載裝置 |
US20150325460A1 (en) * | 2014-05-12 | 2015-11-12 | Canon Kabushiki Kaisha | Etching chamber and method of manufacturing substrate |
JP2017014080A (ja) * | 2015-07-03 | 2017-01-19 | 株式会社Sumco | シリコン単結晶の検査方法および製造方法 |
CN211957617U (zh) * | 2020-10-19 | 2020-11-17 | 西安奕斯伟硅片技术有限公司 | 硅片刻蚀承载结构、硅片刻蚀装置、dosd测试设备 |
-
2020
- 2020-10-27 CN CN202011162379.8A patent/CN112349583A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001185528A (ja) * | 1999-12-27 | 2001-07-06 | Minolta Co Ltd | エッチング用治具及びエッチング装置並びにエッチング方法 |
JP2005340734A (ja) * | 2004-05-31 | 2005-12-08 | Seiko Epson Corp | 半導体素子の製造方法及び半導体素子 |
US20080153261A1 (en) * | 2006-12-20 | 2008-06-26 | Siltronic Ag | Method and device for producing semiconductor wafers of silicon |
JP2011243783A (ja) * | 2010-05-19 | 2011-12-01 | Sumco Corp | 半導体ウェーハ評価方法、半導体ウェーハ評価用標準試料およびその作製方法 |
JP2014067773A (ja) * | 2012-09-25 | 2014-04-17 | Canon Inc | シリコン基板のエッチング方法 |
TW201417164A (zh) * | 2012-10-30 | 2014-05-01 | Motech Ind Inc | 濕式蝕刻方法與基板承載裝置 |
US20150325460A1 (en) * | 2014-05-12 | 2015-11-12 | Canon Kabushiki Kaisha | Etching chamber and method of manufacturing substrate |
JP2017014080A (ja) * | 2015-07-03 | 2017-01-19 | 株式会社Sumco | シリコン単結晶の検査方法および製造方法 |
CN211957617U (zh) * | 2020-10-19 | 2020-11-17 | 西安奕斯伟硅片技术有限公司 | 硅片刻蚀承载结构、硅片刻蚀装置、dosd测试设备 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113363183A (zh) * | 2021-05-21 | 2021-09-07 | 夏秋月 | 一种具有定时保护功能的湿法刻蚀用装置 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220630 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |
|
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |