SG143037A1 - Position correction in y of mask object shift due to z offset and non- perpendicular illumination - Google Patents
Position correction in y of mask object shift due to z offset and non- perpendicular illuminationInfo
- Publication number
- SG143037A1 SG143037A1 SG200401892-5A SG2004018925A SG143037A1 SG 143037 A1 SG143037 A1 SG 143037A1 SG 2004018925 A SG2004018925 A SG 2004018925A SG 143037 A1 SG143037 A1 SG 143037A1
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- offset
- shift due
- variations
- optical axis
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q11/00—Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling work; Safety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
- B23Q11/08—Protective coverings for parts of machine tools; Splash guards
- B23Q11/0825—Relatively slidable coverings, e.g. telescopic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B29/00—Holders for non-rotary cutting tools; Boring bars or boring heads; Accessories for tool holders
- B23B29/24—Tool holders for a plurality of cutting tools, e.g. turrets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/406,602 US6853440B1 (en) | 2003-04-04 | 2003-04-04 | Position correction in Y of mask object shift due to Z offset and non-perpendicular illumination |
Publications (1)
Publication Number | Publication Date |
---|---|
SG143037A1 true SG143037A1 (en) | 2008-06-27 |
Family
ID=32850652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200401892-5A SG143037A1 (en) | 2003-04-04 | 2004-04-02 | Position correction in y of mask object shift due to z offset and non- perpendicular illumination |
Country Status (8)
Country | Link |
---|---|
US (1) | US6853440B1 (fr) |
EP (1) | EP1465018B1 (fr) |
JP (1) | JP4405304B2 (fr) |
KR (1) | KR100706934B1 (fr) |
CN (1) | CN100487577C (fr) |
DE (1) | DE602004021309D1 (fr) |
SG (1) | SG143037A1 (fr) |
TW (1) | TWI284252B (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10219514A1 (de) * | 2002-04-30 | 2003-11-13 | Zeiss Carl Smt Ag | Beleuchtungssystem, insbesondere für die EUV-Lithographie |
US7031794B2 (en) * | 2003-09-26 | 2006-04-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Smart overlay control |
US7259834B2 (en) * | 2004-10-18 | 2007-08-21 | Nikon Corporation | Method and apparatus having a reticle stage safety feature |
JP2006278767A (ja) * | 2005-03-29 | 2006-10-12 | Toshiba Corp | オーバーレイ制御システム及びオーバーレイ制御方法 |
JP2006324501A (ja) | 2005-05-19 | 2006-11-30 | Toshiba Corp | 相変化メモリおよびその製造方法 |
JP4856798B2 (ja) * | 2006-10-18 | 2012-01-18 | Hoya株式会社 | 反射型マスクブランクの製造方法及び反射型マスクの製造方法、並びに半導体装置の製造方法 |
JP4975532B2 (ja) * | 2007-07-02 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 反射型露光方法 |
US20090097004A1 (en) * | 2007-10-16 | 2009-04-16 | Qimonda Ag | Lithography Apparatus, Masks for Non-Telecentric Exposure and Methods of Manufacturing Integrated Circuits |
DE102008000967B4 (de) * | 2008-04-03 | 2015-04-09 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
EP2729763A1 (fr) * | 2011-07-08 | 2014-05-14 | Carl Zeiss Industrielle Messtechnik GmbH | Correction et/ou prévention d'erreurs lors de la mesure de coordonnées d'une pièce |
US9389520B2 (en) * | 2012-02-03 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for lithography with leveling sensor |
DE102014218474A1 (de) | 2014-09-15 | 2016-03-17 | Carl Zeiss Smt Gmbh | Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie |
JP6557515B2 (ja) * | 2015-06-04 | 2019-08-07 | キヤノン株式会社 | 走査露光装置、走査露光方法、及びデバイス製造方法 |
CN106226926B (zh) * | 2016-08-08 | 2019-08-23 | 深圳市科利德光电材料股份有限公司 | 一种液晶显示器及改善姆拉现象的方法 |
US10162257B2 (en) | 2016-12-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet lithography system, device, and method for printing low pattern density features |
US10996573B2 (en) * | 2017-01-31 | 2021-05-04 | Asml Netherlands B.V. | Method and system for increasing accuracy of pattern positioning |
EP3427663B1 (fr) * | 2017-07-13 | 2020-03-04 | Agfa Nv | Procédé d'imagerie par contraste de phase |
US11287746B1 (en) * | 2020-09-30 | 2022-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for overlay error reduction |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6359678B1 (en) * | 1997-11-14 | 2002-03-19 | Nikon Corporation | Exposure apparatus, method for producing the same, and exposure method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5222112A (en) * | 1990-12-27 | 1993-06-22 | Hitachi, Ltd. | X-ray pattern masking by a reflective reduction projection optical system |
EP1341044A3 (fr) | 1995-05-30 | 2003-10-29 | ASML Netherlands B.V. | Dispositif de positionnement à cadre de référence pour système de mesure |
JPH09180989A (ja) | 1995-12-26 | 1997-07-11 | Toshiba Corp | 露光装置および露光方法 |
US6312134B1 (en) * | 1996-07-25 | 2001-11-06 | Anvik Corporation | Seamless, maskless lithography system using spatial light modulator |
US5757160A (en) | 1996-12-23 | 1998-05-26 | Svg Lithography Systems, Inc. | Moving interferometer wafer stage |
WO1998039689A1 (fr) | 1997-03-07 | 1998-09-11 | Asm Lithography B.V. | Appareil de projection lithographique a unite d'alignement hors axe |
US5956192A (en) | 1997-09-18 | 1999-09-21 | Svg Lithography Systems, Inc. | Four mirror EUV projection optics |
AU2549899A (en) * | 1998-03-02 | 1999-09-20 | Nikon Corporation | Method and apparatus for exposure, method of manufacture of exposure tool, device, and method of manufacture of device |
JP4072981B2 (ja) * | 1998-10-09 | 2008-04-09 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
US6369874B1 (en) | 2000-04-18 | 2002-04-09 | Silicon Valley Group, Inc. | Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography |
EP1271247A1 (fr) * | 2001-06-20 | 2003-01-02 | ASML Netherlands B.V. | Méthode et masque pour exposition par projection |
US6618120B2 (en) * | 2001-10-11 | 2003-09-09 | Nikon Corporation | Devices and methods for compensating for tilting of a leveling table in a microlithography apparatus |
-
2003
- 2003-04-04 US US10/406,602 patent/US6853440B1/en not_active Expired - Lifetime
-
2004
- 2004-03-31 JP JP2004105078A patent/JP4405304B2/ja not_active Expired - Fee Related
- 2004-04-02 KR KR1020040022897A patent/KR100706934B1/ko active IP Right Grant
- 2004-04-02 CN CNB2004100321850A patent/CN100487577C/zh not_active Expired - Lifetime
- 2004-04-02 SG SG200401892-5A patent/SG143037A1/en unknown
- 2004-04-02 TW TW093109277A patent/TWI284252B/zh not_active IP Right Cessation
- 2004-04-05 DE DE602004021309T patent/DE602004021309D1/de not_active Expired - Lifetime
- 2004-04-05 EP EP04251975A patent/EP1465018B1/fr not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6359678B1 (en) * | 1997-11-14 | 2002-03-19 | Nikon Corporation | Exposure apparatus, method for producing the same, and exposure method |
Also Published As
Publication number | Publication date |
---|---|
TW200510944A (en) | 2005-03-16 |
EP1465018B1 (fr) | 2009-06-03 |
KR100706934B1 (ko) | 2007-04-11 |
EP1465018A3 (fr) | 2007-08-29 |
TWI284252B (en) | 2007-07-21 |
DE602004021309D1 (de) | 2009-07-16 |
KR20040086817A (ko) | 2004-10-12 |
JP2004312002A (ja) | 2004-11-04 |
EP1465018A2 (fr) | 2004-10-06 |
JP4405304B2 (ja) | 2010-01-27 |
CN1573556A (zh) | 2005-02-02 |
CN100487577C (zh) | 2009-05-13 |
US6853440B1 (en) | 2005-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG143037A1 (en) | Position correction in y of mask object shift due to z offset and non- perpendicular illumination | |
EP1083462A4 (fr) | Procede et systeme d'exposition, photomasque et son procede de fabrication, micro-composant et son procede de fabrication | |
TW200802538A (en) | Exposure apparatus, exposure method, and device manufacturing method | |
AU2002349080A1 (en) | Optical proximity correction for phase shifting photolithographic masks | |
GB2375392A (en) | Phase profilometry system with telecentric projector | |
TW200632588A (en) | Exposure device, exposure method and production method of a micro-device | |
KR960042227A (ko) | 투영노광장치 | |
TW200731023A (en) | System and method for compensating for radiation induced thermal distortions | |
TW200610031A (en) | Image surface measuring method, exposuring method, device manufacturing method, and exposuring device | |
WO2005017620A3 (fr) | Dispositif d'eclairage et polariseur destines a un systeme d'exposition de projection microlithographique | |
TW200507065A (en) | Marker structure for alignment or overlay to correct pattern induced displacement, mask pattern for defining such a marker structure and lithographic projection apparatus using such a mask pattern | |
EP1061561A4 (fr) | Procede et appareil d'exposition, fabrication d'un outil d'exposition, dispositif, et fabrication de ce dispositif | |
GB2438113A (en) | Extreme ultraviolet mask with leaky absorber and method for its fabrication | |
TW200623233A (en) | Photomask blank and photomask | |
SG165169A1 (en) | Liquid immersion exposure apparatus | |
AU2002349599A1 (en) | Inspection device and inspection method for pattern profile, exposure system | |
KR970077116A (ko) | 노광 방법 및 노광 장치 | |
TWI266959B (en) | Device manufacturing method, device manufactured thereby and a mask for use in the method | |
TW200720855A (en) | Exposure method and exposure apparatus | |
TW200612193A (en) | Method for producing substrate having light-shielding pattern and producing light-shielding pattern, and photosensitive resin composition, transferring material, color filter, and display device | |
TW200801581A (en) | Drawing system | |
TW200611079A (en) | Lithographic apparatus, control system and device manufacturing method | |
EP1081553A3 (fr) | Méthode d'exposition et appareil d'exposition par balayage | |
WO2006117642A3 (fr) | Procede lithographique de transfert de motif sans masque sur un substrat photosensible | |
EP1117000A3 (fr) | Précurseur pour masque à décalage de phase, masque à décalage de phase et procédé de fabrication |