SG137837A1 - Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection - Google Patents
Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detectionInfo
- Publication number
- SG137837A1 SG137837A1 SG200704055-3A SG2007040553A SG137837A1 SG 137837 A1 SG137837 A1 SG 137837A1 SG 2007040553 A SG2007040553 A SG 2007040553A SG 137837 A1 SG137837 A1 SG 137837A1
- Authority
- SG
- Singapore
- Prior art keywords
- silicon nitride
- compositions
- mechanical polishing
- chemical mechanical
- endpoint detection
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000000377 silicon dioxide Substances 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- 238000001514 detection method Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 238000005342 ion exchange Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/446,936 US7297633B1 (en) | 2006-06-05 | 2006-06-05 | Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection |
Publications (1)
Publication Number | Publication Date |
---|---|
SG137837A1 true SG137837A1 (en) | 2007-12-28 |
Family
ID=38650726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200704055-3A SG137837A1 (en) | 2006-06-05 | 2007-06-05 | Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection |
Country Status (8)
Country | Link |
---|---|
US (1) | US7297633B1 (zh) |
JP (1) | JP2007324606A (zh) |
KR (1) | KR20070116543A (zh) |
CN (1) | CN101085902B (zh) |
DE (1) | DE102007024142A1 (zh) |
FR (1) | FR2901802B1 (zh) |
SG (1) | SG137837A1 (zh) |
TW (1) | TW200804577A (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100015806A1 (en) * | 2006-09-15 | 2010-01-21 | Masato Fukasawa | Cmp polishing slurry, additive liquid for cmp polishing slurry, and substrate-polishing processes using the same |
US20090181475A1 (en) * | 2008-01-11 | 2009-07-16 | Novellus Systems, Inc. | Detecting the presence of a workpiece relative to a carrier head |
US8366959B2 (en) * | 2008-09-26 | 2013-02-05 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
US8735293B2 (en) * | 2008-11-05 | 2014-05-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
EP2460176A1 (de) | 2009-12-18 | 2012-06-06 | RENA GmbH | Verfahren zum abtragen von substratschichten |
US8671685B2 (en) * | 2010-03-08 | 2014-03-18 | Tma Power, Llc | Microturbine Sun Tracker |
CN102464946B (zh) * | 2010-11-19 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其应用 |
US9564337B2 (en) * | 2010-12-24 | 2017-02-07 | Hitachi Chemical Co., Ltd. | Polishing liquid and method for polishing substrate using the polishing liquid |
US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
WO2023145572A1 (ja) * | 2022-01-28 | 2023-08-03 | Agc株式会社 | 研磨剤、研磨剤用添加液および研磨方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05269460A (ja) * | 1992-03-27 | 1993-10-19 | Kurita Water Ind Ltd | アンモニアおよびアルカリ土類金属イオン含有水の処理方法 |
US6228280B1 (en) * | 1998-05-06 | 2001-05-08 | International Business Machines Corporation | Endpoint detection by chemical reaction and reagent |
US6126848A (en) | 1998-05-06 | 2000-10-03 | International Business Machines Corporation | Indirect endpoint detection by chemical reaction and chemiluminescence |
JP3449600B2 (ja) * | 1998-05-06 | 2003-09-22 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 化学反応による終点の検出 |
EP0957086A3 (en) * | 1998-05-14 | 2003-02-12 | Haldor Topsoe A/S | Process for the removal of metal compounds from an aqueous acid solution |
US6021679A (en) | 1998-08-04 | 2000-02-08 | International Business Machines Corporation | Probe for slurry gas sampling |
US6899784B1 (en) | 2002-06-27 | 2005-05-31 | International Business Machines Corporation | Apparatus for detecting CMP endpoint in acidic slurries |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
-
2006
- 2006-06-05 US US11/446,936 patent/US7297633B1/en not_active Expired - Fee Related
-
2007
- 2007-05-23 TW TW096118311A patent/TW200804577A/zh unknown
- 2007-05-24 DE DE102007024142A patent/DE102007024142A1/de not_active Withdrawn
- 2007-05-30 KR KR1020070052556A patent/KR20070116543A/ko not_active Application Discontinuation
- 2007-06-05 FR FR0755483A patent/FR2901802B1/fr not_active Expired - Fee Related
- 2007-06-05 JP JP2007148759A patent/JP2007324606A/ja active Pending
- 2007-06-05 CN CN2007101098948A patent/CN101085902B/zh not_active Expired - Fee Related
- 2007-06-05 SG SG200704055-3A patent/SG137837A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2901802A1 (fr) | 2007-12-07 |
JP2007324606A (ja) | 2007-12-13 |
DE102007024142A1 (de) | 2007-12-06 |
KR20070116543A (ko) | 2007-12-10 |
US7297633B1 (en) | 2007-11-20 |
CN101085902B (zh) | 2010-09-08 |
FR2901802B1 (fr) | 2012-11-30 |
US20070281483A1 (en) | 2007-12-06 |
TW200804577A (en) | 2008-01-16 |
CN101085902A (zh) | 2007-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG137837A1 (en) | Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection | |
TW200611966A (en) | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride | |
TW200736375A (en) | Compositions for chemical mechanical polishing silicon dioxide and silicon nitride | |
TW200636029A (en) | Compositions and methods for chemical mechanical polishing interlevel dielectric layers | |
WO2009142692A3 (en) | Stable, high rate silicon slurry | |
TW200718763A (en) | Polymeric barrier removal polishing slurry | |
TW200730615A (en) | Compositions and methods for chemical mechanical polishing interlevel dielectric layers | |
JP2010541203A5 (zh) | ||
MY150866A (en) | Compositions and methods for polishing silicon nitride materials | |
WO2006099171A3 (en) | NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES | |
JP2007116105A5 (zh) | ||
TW200801168A (en) | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for preparing aqueous dispersion for chemical mechanical polishing | |
MY169952A (en) | Composition and method for polishing bulk silicon | |
JP2006191078A5 (zh) | ||
JP2014505358A5 (zh) | ||
SG157354A1 (en) | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios | |
JP2008283203A5 (zh) | ||
SG162680A1 (en) | Wet clean compositions for cowp and porous dielectrics | |
SG110211A1 (en) | Polishing composition | |
EP1535979A3 (en) | Compositions and methods for chemical mechanical polishing silica and silicon nitride | |
DE60330971D1 (de) | Halbleiterschleif prozess zu seiner herstellung und polierverfahren | |
WO2008132983A1 (ja) | 研磨剤組成物および半導体集積回路装置の製造方法 | |
TW200627095A (en) | Remover composition | |
TW200740968A (en) | Polishing composition for silicon wafer | |
WO2008036823A3 (en) | Uric acid additive for cleaning formulations |