SG137837A1 - Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection - Google Patents

Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

Info

Publication number
SG137837A1
SG137837A1 SG200704055-3A SG2007040553A SG137837A1 SG 137837 A1 SG137837 A1 SG 137837A1 SG 2007040553 A SG2007040553 A SG 2007040553A SG 137837 A1 SG137837 A1 SG 137837A1
Authority
SG
Singapore
Prior art keywords
silicon nitride
compositions
mechanical polishing
chemical mechanical
endpoint detection
Prior art date
Application number
SG200704055-3A
Other languages
English (en)
Inventor
Brian L Mueller
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of SG137837A1 publication Critical patent/SG137837A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200704055-3A 2006-06-05 2007-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection SG137837A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/446,936 US7297633B1 (en) 2006-06-05 2006-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

Publications (1)

Publication Number Publication Date
SG137837A1 true SG137837A1 (en) 2007-12-28

Family

ID=38650726

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200704055-3A SG137837A1 (en) 2006-06-05 2007-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

Country Status (8)

Country Link
US (1) US7297633B1 (de)
JP (1) JP2007324606A (de)
KR (1) KR20070116543A (de)
CN (1) CN101085902B (de)
DE (1) DE102007024142A1 (de)
FR (1) FR2901802B1 (de)
SG (1) SG137837A1 (de)
TW (1) TW200804577A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5186707B2 (ja) * 2006-09-15 2013-04-24 日立化成株式会社 Cmp研磨剤、cmp研磨剤用添加液及びこれらを用いた基板の研磨方法
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
CN102165564B (zh) * 2008-09-26 2014-10-01 罗地亚管理公司 用于化学机械抛光的磨料组合物及其使用方法
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
WO2011072706A1 (de) 2009-12-18 2011-06-23 Rena Gmbh Verfahren zum abtragen von substratschichten
US8671685B2 (en) * 2010-03-08 2014-03-18 Tma Power, Llc Microturbine Sun Tracker
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子(上海)有限公司 一种化学机械抛光液及其应用
SG190765A1 (en) * 2010-12-24 2013-07-31 Hitachi Chemical Co Ltd Polishing liquid and method for polishing substrate using the polishing liquid
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
WO2023145572A1 (ja) * 2022-01-28 2023-08-03 Agc株式会社 研磨剤、研磨剤用添加液および研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
JP3449600B2 (ja) * 1998-05-06 2003-09-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 化学反応による終点の検出
US6126848A (en) 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6228280B1 (en) * 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
EP0957086A3 (de) * 1998-05-14 2003-02-12 Haldor Topsoe A/S Verfahren zur Entfernung von metallischen Verbindungen aus einer säuren wässrigen Lösung
US6021679A (en) 1998-08-04 2000-02-08 International Business Machines Corporation Probe for slurry gas sampling
US6899784B1 (en) 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride

Also Published As

Publication number Publication date
CN101085902B (zh) 2010-09-08
KR20070116543A (ko) 2007-12-10
US7297633B1 (en) 2007-11-20
TW200804577A (en) 2008-01-16
JP2007324606A (ja) 2007-12-13
CN101085902A (zh) 2007-12-12
FR2901802B1 (fr) 2012-11-30
DE102007024142A1 (de) 2007-12-06
FR2901802A1 (fr) 2007-12-07
US20070281483A1 (en) 2007-12-06

Similar Documents

Publication Publication Date Title
SG137837A1 (en) Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
TW200611966A (en) Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
TW200736375A (en) Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
TW200636029A (en) Compositions and methods for chemical mechanical polishing interlevel dielectric layers
WO2009142692A3 (en) Stable, high rate silicon slurry
TW200718763A (en) Polymeric barrier removal polishing slurry
TW200730615A (en) Compositions and methods for chemical mechanical polishing interlevel dielectric layers
JP2010541203A5 (de)
MY150866A (en) Compositions and methods for polishing silicon nitride materials
WO2006099171A3 (en) NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES
JP2007116105A5 (de)
TW200801168A (en) Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for preparing aqueous dispersion for chemical mechanical polishing
EP1535979A3 (de) Zusammensetzungen und Verfahren zum chemisch-mechanischen Polieren von Silika unf Siliziumnitrid
MY169952A (en) Composition and method for polishing bulk silicon
JP2006191078A5 (de)
JP2014505358A5 (de)
JP2017525796A5 (de)
TWI347969B (en) Polishing composition
SG157354A1 (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP2008283203A5 (de)
SG162680A1 (en) Wet clean compositions for cowp and porous dielectrics
EP1939256A4 (de) Härtbare zusammensetzung
TW200704737A (en) Adhesive composition for semiconductor, semiconductor device using it, and process for semiconductor device
WO2008132983A1 (ja) 研磨剤組成物および半導体集積回路装置の製造方法
TW200627095A (en) Remover composition