SG131768A1 - Lithographic apparatus with debris suppression means and device manufacturing method - Google Patents

Lithographic apparatus with debris suppression means and device manufacturing method

Info

Publication number
SG131768A1
SG131768A1 SG200307724-5A SG2003077245A SG131768A1 SG 131768 A1 SG131768 A1 SG 131768A1 SG 2003077245 A SG2003077245 A SG 2003077245A SG 131768 A1 SG131768 A1 SG 131768A1
Authority
SG
Singapore
Prior art keywords
electrode
substrate
radiation source
device manufacturing
radiation
Prior art date
Application number
SG200307724-5A
Other languages
English (en)
Inventor
Levinus Pieter Bakker
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG131768A1 publication Critical patent/SG131768A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
  • Cleaning In General (AREA)
SG200307724-5A 2002-12-23 2003-12-23 Lithographic apparatus with debris suppression means and device manufacturing method SG131768A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02080453 2002-12-23

Publications (1)

Publication Number Publication Date
SG131768A1 true SG131768A1 (en) 2007-05-28

Family

ID=32798716

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200307724-5A SG131768A1 (en) 2002-12-23 2003-12-23 Lithographic apparatus with debris suppression means and device manufacturing method

Country Status (6)

Country Link
US (1) US7136141B2 (zh)
JP (1) JP3972207B2 (zh)
KR (1) KR100700373B1 (zh)
CN (1) CN1514305A (zh)
SG (1) SG131768A1 (zh)
TW (1) TWI255394B (zh)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671349B2 (en) 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
US7217941B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source
SG118268A1 (en) * 2003-06-27 2006-01-27 Asml Netherlands Bv Laser produced plasma radiation system with foil trap
US7230258B2 (en) * 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
JP4535732B2 (ja) * 2004-01-07 2010-09-01 株式会社小松製作所 光源装置及びそれを用いた露光装置
JP4763684B2 (ja) * 2004-03-31 2011-08-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 放射線源により生じる粒子の除去
JP4578901B2 (ja) * 2004-09-09 2010-11-10 株式会社小松製作所 極端紫外光源装置
DE102004058500A1 (de) * 2004-12-04 2006-06-08 Philips Intellectual Property & Standards Gmbh Verfahren und Vorrichtung zum Betreiben einer elektrischen Entladevorrichtung
US7145631B2 (en) * 2004-12-27 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for mitigating debris particles
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1894063A1 (en) * 2005-06-21 2008-03-05 Carl Zeiss SMT AG A double-facetted illumination system with attenuator elements on the pupil facet mirror
WO2007032061A1 (ja) 2005-09-13 2007-03-22 Advantest Corporation 製造システム、製造方法、管理装置、管理方法、およびプログラム
DE102005044141B4 (de) * 2005-09-15 2008-08-14 Qimonda Ag Belichtungsgerät und Verfahren zum Betrieb eines Belichtungsgeräts
US7491951B2 (en) * 2005-12-28 2009-02-17 Asml Netherlands B.V. Lithographic apparatus, system and device manufacturing method
JP4850558B2 (ja) * 2006-03-31 2012-01-11 キヤノン株式会社 光源装置、及びそれを用いた露光装置、デバイス製造方法
US7889312B2 (en) * 2006-09-22 2011-02-15 Asml Netherlands B.V. Apparatus comprising a rotating contaminant trap
US8071963B2 (en) * 2006-12-27 2011-12-06 Asml Netherlands B.V. Debris mitigation system and lithographic apparatus
JP2009032776A (ja) * 2007-07-25 2009-02-12 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置における高速粒子の捕捉方法
US7655925B2 (en) 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7812329B2 (en) 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US9285690B2 (en) 2008-08-15 2016-03-15 Asml Netherlands B.V. Mirror, lithographic apparatus and device manufacturing method
NL1036803A (nl) 2008-09-09 2010-03-15 Asml Netherlands Bv Radiation system and lithographic apparatus.
JP2010123929A (ja) 2008-10-24 2010-06-03 Gigaphoton Inc 極端紫外光光源装置
JP5559562B2 (ja) * 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
US8723147B2 (en) * 2009-04-02 2014-05-13 ETH Zürich Extreme ultraviolet light source with a debris-mitigated and cooled collector optics
SG183434A1 (en) * 2010-03-12 2012-09-27 Asml Netherlands Bv Radiation source, lithographic apparatus and device manufacturing method
JP5758153B2 (ja) * 2010-03-12 2015-08-05 エーエスエムエル ネザーランズ ビー．ブイ． 放射源装置、リソグラフィ装置、放射発生および送出方法、およびデバイス製造方法
KR20130054945A (ko) * 2010-03-12 2013-05-27 에이에스엠엘 네델란즈 비.브이. 오염 입자들을 제거하기 위한 시스템, 리소그래피 장치, 오염 입자들을 제거하기 위한 방법 및 디바이스 제조 방법
JP6081711B2 (ja) * 2011-09-23 2017-02-15 エーエスエムエル ネザーランズ ビー．ブイ． 放射源
US9268031B2 (en) * 2012-04-09 2016-02-23 Kla-Tencor Corporation Advanced debris mitigation of EUV light source
US9759912B2 (en) 2012-09-26 2017-09-12 Kla-Tencor Corporation Particle and chemical control using tunnel flow
CN103064259B (zh) * 2012-12-10 2014-11-12 华中科技大学 一种极紫外激光等离子体光源碎屑的隔离方法及系统
CN103246176B (zh) * 2013-04-02 2015-01-28 华中科技大学 一种用于隔离激光等离子体极紫外光源碎屑隔离腔
KR102115543B1 (ko) 2013-04-26 2020-05-26 삼성전자주식회사 극자외선 광원 장치
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
CN104914681B (zh) * 2015-05-29 2017-06-23 中国科学院长春光学精密机械与物理研究所 具有降低光学元件热变形和高传输效率的碎屑抑制系统
WO2017125254A1 (en) * 2016-01-18 2017-07-27 Asml Netherlands B.V. A beam measurement system, a lithographic system, and a method
KR20200128275A (ko) 2019-05-02 2020-11-12 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116622A (en) 1980-02-20 1981-09-12 Fujitsu Ltd X-ray transcriber
JPH0744020B2 (ja) 1986-05-13 1995-05-15 日本電信電話株式会社 プラズマｘ線源のｘ線取り出し装置
JP2552433B2 (ja) 1994-06-30 1996-11-13 関西電力株式会社 レーザープラズマｘ線源のデブリス除去方法及び装置
JPH10221499A (ja) 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
US6232613B1 (en) * 1997-03-11 2001-05-15 University Of Central Florida Debris blocker/collector and emission enhancer for discharge sources
EP0957402B1 (en) 1998-05-15 2006-09-20 ASML Netherlands B.V. Lithographic device
EP1182510B1 (en) 2000-08-25 2006-04-12 ASML Netherlands B.V. Lithographic projection apparatus
JP3947374B2 (ja) 2000-08-25 2007-07-18 エーエスエムエル ネザーランズ ビー．ブイ． 平板投影装置および素子製造方法
US6576912B2 (en) 2001-01-03 2003-06-10 Hugo M. Visser Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window
US6614505B2 (en) 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
EP1223468B1 (en) 2001-01-10 2008-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
JP2003022950A (ja) * 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
US6714624B2 (en) * 2001-09-18 2004-03-30 Euv Llc Discharge source with gas curtain for protecting optics from particles

Also Published As

Publication number Publication date
JP3972207B2 (ja) 2007-09-05
KR100700373B1 (ko) 2007-03-27
KR20040056374A (ko) 2004-06-30
TW200426525A (en) 2004-12-01
US20040179182A1 (en) 2004-09-16
TWI255394B (en) 2006-05-21
CN1514305A (zh) 2004-07-21
US7136141B2 (en) 2006-11-14
JP2004207736A (ja) 2004-07-22

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