SG130988A1 - Portable data storage device incorporating multiple flash memory units - Google Patents
Portable data storage device incorporating multiple flash memory unitsInfo
- Publication number
- SG130988A1 SG130988A1 SG200600513-6A SG2006005136A SG130988A1 SG 130988 A1 SG130988 A1 SG 130988A1 SG 2006005136 A SG2006005136 A SG 2006005136A SG 130988 A1 SG130988 A1 SG 130988A1
- Authority
- SG
- Singapore
- Prior art keywords
- storage device
- data storage
- flash memory
- memory units
- portable data
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0662—Virtualisation aspects
- G06F3/0664—Virtualisation aspects at device level, e.g. emulation of a storage device or system
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200600513-6A SG130988A1 (en) | 2005-09-29 | 2006-01-18 | Portable data storage device incorporating multiple flash memory units |
BRPI0621722A BRPI0621722A2 (pt) | 2006-01-18 | 2006-12-13 | " dispositivo de armazenamento de dados portátil incorporando unidades de memória flash múltiplas " |
EP06824656A EP1977307A1 (en) | 2006-01-18 | 2006-12-13 | Portable data storage device incorporating multiple flash memory units |
PCT/SG2006/000388 WO2007084079A1 (en) | 2006-01-18 | 2006-12-13 | Portable data storage device incorporating multiple flash memory units |
RU2008132970/09A RU2008132970A (ru) | 2006-01-18 | 2006-12-13 | Портативное устройство хранения данных, содержащее множество модулей флэш-памяти |
CN2006800514352A CN101384984B (zh) | 2006-01-18 | 2006-12-13 | 整合有多个闪存单元的便携式数据存储装置 |
JP2008551232A JP2009524145A (ja) | 2006-01-18 | 2006-12-13 | 複数のフラッシュメモリを内蔵したポータブルデータストレージデバイス |
US12/161,438 US7962685B2 (en) | 2006-01-18 | 2006-12-13 | Portable data storage device incorporating multiple flash memory units |
KR1020087019155A KR101017358B1 (ko) | 2006-01-18 | 2006-12-13 | 복수의 플래시 메모리 유닛을 포함하는 휴대용 데이터 저장장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/SG2005/000328 WO2007037757A1 (en) | 2005-09-29 | 2005-09-29 | Portable data storage using slc and mlc flash memory |
SG200600513-6A SG130988A1 (en) | 2005-09-29 | 2006-01-18 | Portable data storage device incorporating multiple flash memory units |
Publications (1)
Publication Number | Publication Date |
---|---|
SG130988A1 true SG130988A1 (en) | 2007-04-26 |
Family
ID=38287926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200600513-6A SG130988A1 (en) | 2005-09-29 | 2006-01-18 | Portable data storage device incorporating multiple flash memory units |
Country Status (9)
Country | Link |
---|---|
US (1) | US7962685B2 (ko) |
EP (1) | EP1977307A1 (ko) |
JP (1) | JP2009524145A (ko) |
KR (1) | KR101017358B1 (ko) |
CN (1) | CN101384984B (ko) |
BR (1) | BRPI0621722A2 (ko) |
RU (1) | RU2008132970A (ko) |
SG (1) | SG130988A1 (ko) |
WO (1) | WO2007084079A1 (ko) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7852654B2 (en) * | 2006-12-28 | 2010-12-14 | Hynix Semiconductor Inc. | Semiconductor memory device, and multi-chip package and method of operating the same |
US7646636B2 (en) | 2007-02-16 | 2010-01-12 | Mosaid Technologies Incorporated | Non-volatile memory with dynamic multi-mode operation |
KR101498673B1 (ko) | 2007-08-14 | 2015-03-09 | 삼성전자주식회사 | 반도체 드라이브, 그것의 데이터 저장 방법, 그리고 그것을포함한 컴퓨팅 시스템 |
JP4746598B2 (ja) * | 2007-09-28 | 2011-08-10 | 株式会社東芝 | 半導体記憶装置 |
JP5324599B2 (ja) * | 2007-12-13 | 2013-10-23 | トムソン ライセンシング | コピープロテクトされたソフトウエア・カートリッジ |
US8001316B2 (en) * | 2007-12-27 | 2011-08-16 | Sandisk Il Ltd. | Controller for one type of NAND flash memory for emulating another type of NAND flash memory |
TWI425523B (zh) * | 2008-03-25 | 2014-02-01 | Asmedia Technology Inc | 混合型快閃儲存裝置及其操作方法 |
TWI388986B (zh) * | 2008-06-19 | 2013-03-11 | Silicon Motion Inc | 快閃記憶體裝置的運作方法及快閃記憶體裝置 |
US8838876B2 (en) * | 2008-10-13 | 2014-09-16 | Micron Technology, Inc. | Translation layer in a solid state storage device |
TWI385527B (zh) * | 2009-02-10 | 2013-02-11 | Phison Electronics Corp | Mlc nand型快閃記憶體儲存系統及其控制器與存取方法 |
TWI440044B (zh) * | 2010-03-01 | 2014-06-01 | Phison Electronics Corp | 記憶體管理與寫入方法、記憶體控制器與記憶體儲存系統 |
US8977803B2 (en) | 2011-11-21 | 2015-03-10 | Western Digital Technologies, Inc. | Disk drive data caching using a multi-tiered memory |
US9268701B1 (en) | 2011-11-21 | 2016-02-23 | Western Digital Technologies, Inc. | Caching of data in data storage systems by managing the size of read and write cache based on a measurement of cache reliability |
US8977804B1 (en) | 2011-11-21 | 2015-03-10 | Western Digital Technologies, Inc. | Varying data redundancy in storage systems |
US8904091B1 (en) | 2011-12-22 | 2014-12-02 | Western Digital Technologies, Inc. | High performance media transport manager architecture for data storage systems |
KR20140033964A (ko) * | 2012-09-11 | 2014-03-19 | 삼성전자주식회사 | 단말기의 데이터 저장장치 및 방법 |
US9489148B2 (en) | 2013-03-13 | 2016-11-08 | Seagate Technology Llc | Selecting between non-volatile memory units having different minimum addressable data unit sizes |
CN107391389B (zh) | 2013-08-05 | 2020-11-24 | 慧荣科技股份有限公司 | 用来管理一记忆装置的方法以及记忆装置与控制器 |
CN107741913B (zh) | 2013-08-05 | 2021-09-07 | 慧荣科技股份有限公司 | 用来管理一记忆装置的方法、记忆装置与控制器 |
US10140067B1 (en) | 2013-12-19 | 2018-11-27 | Western Digital Technologies, Inc. | Data management for data storage device with multiple types of non-volatile memory media |
CN103942151A (zh) * | 2014-04-10 | 2014-07-23 | 深圳市硅格半导体有限公司 | 闪存的数据存储方法及装置 |
JP6166476B2 (ja) * | 2014-07-09 | 2017-07-19 | 株式会社日立製作所 | メモリモジュールおよび情報処理システム |
US9530491B1 (en) * | 2015-11-16 | 2016-12-27 | Sandisk Technologies Llc | System and method for direct write to MLC memory |
TWI621017B (zh) * | 2017-03-06 | 2018-04-11 | 慧榮科技股份有限公司 | 資料儲存裝置以及其操作方法 |
CN108509355A (zh) * | 2018-03-31 | 2018-09-07 | 北京联想核芯科技有限公司 | 一种用于SSD的SLC Cache的方法和装置 |
US11099779B2 (en) | 2018-09-24 | 2021-08-24 | Micron Technology, Inc. | Addressing in memory with a read identification (RID) number |
CN111367465A (zh) * | 2018-12-26 | 2020-07-03 | 深圳市江波龙电子股份有限公司 | 一种存储设备的控制方法及存储设备、电子设备 |
CN111949197B (zh) * | 2019-05-16 | 2024-03-29 | 兆易创新科技集团股份有限公司 | 一种3d tlc闪存存储器及其数据写入方法和装置 |
JP2021043678A (ja) * | 2019-09-10 | 2021-03-18 | キオクシア株式会社 | メモリシステム及び方法 |
CN114327240A (zh) * | 2020-09-29 | 2022-04-12 | 慧荣科技股份有限公司 | 计算机可读存储介质、闪存存储器的数据存储方法及装置 |
US11907539B2 (en) * | 2020-11-20 | 2024-02-20 | Samsung Electronics Co., Ltd. | System and method for stream based data placement on hybrid SSD |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02148148A (ja) * | 1988-11-29 | 1990-06-07 | Fanuc Ltd | メモリ回路 |
JP2000173281A (ja) * | 1998-12-04 | 2000-06-23 | Sony Corp | 半導体記憶装置 |
US7243185B2 (en) | 2004-04-05 | 2007-07-10 | Super Talent Electronics, Inc. | Flash memory system with a high-speed flash controller |
US8078794B2 (en) * | 2000-01-06 | 2011-12-13 | Super Talent Electronics, Inc. | Hybrid SSD using a combination of SLC and MLC flash memory arrays |
DE20022935U1 (de) * | 2000-02-21 | 2002-07-11 | Trek 2000 International Ltd., Singapur/Singapore | Tragbare Datenspeicherungs-Einrichtung |
DE60132229T2 (de) * | 2000-10-26 | 2008-12-18 | Matsushita Electric Industrial Co., Ltd., Kadoma | Speichervorrichtung, speichersteuerverfahren und programm |
CN1323359C (zh) * | 2003-05-20 | 2007-06-27 | 群联电子股份有限公司 | 以共用汇流排方式启动外部只读存储器的单晶片快闪存储器控制系统 |
US7372731B2 (en) * | 2003-06-17 | 2008-05-13 | Sandisk Il Ltd. | Flash memories with adaptive reference voltages |
JP2005092923A (ja) * | 2003-09-12 | 2005-04-07 | Renesas Technology Corp | 半導体記憶装置 |
US20050138288A1 (en) * | 2003-12-23 | 2005-06-23 | Horng-Yee Chou | Dual mode USB and PCI express device |
CN2676291Y (zh) * | 2004-01-02 | 2005-02-02 | 创惟科技股份有限公司 | 提升闪存存取效能的装置 |
TWI267864B (en) * | 2004-05-06 | 2006-12-01 | Samsung Electronics Co Ltd | Method and device for programming control information |
KR100809320B1 (ko) * | 2006-09-27 | 2008-03-05 | 삼성전자주식회사 | 이종 셀 타입을 지원하는 비휘발성 메모리를 위한 맵핑정보 관리 장치 및 방법 |
KR100833188B1 (ko) * | 2006-11-03 | 2008-05-28 | 삼성전자주식회사 | 데이터의 특성에 따라 싱글 레벨 셀 또는 멀티 레벨 셀에데이터를 저장하는 불휘발성 메모리 시스템 |
-
2006
- 2006-01-18 SG SG200600513-6A patent/SG130988A1/en unknown
- 2006-12-13 CN CN2006800514352A patent/CN101384984B/zh not_active Expired - Fee Related
- 2006-12-13 EP EP06824656A patent/EP1977307A1/en not_active Withdrawn
- 2006-12-13 BR BRPI0621722A patent/BRPI0621722A2/pt not_active Application Discontinuation
- 2006-12-13 US US12/161,438 patent/US7962685B2/en not_active Expired - Fee Related
- 2006-12-13 KR KR1020087019155A patent/KR101017358B1/ko not_active IP Right Cessation
- 2006-12-13 RU RU2008132970/09A patent/RU2008132970A/ru not_active Application Discontinuation
- 2006-12-13 WO PCT/SG2006/000388 patent/WO2007084079A1/en active Application Filing
- 2006-12-13 JP JP2008551232A patent/JP2009524145A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US7962685B2 (en) | 2011-06-14 |
KR20080091203A (ko) | 2008-10-09 |
CN101384984A (zh) | 2009-03-11 |
RU2008132970A (ru) | 2010-02-27 |
JP2009524145A (ja) | 2009-06-25 |
WO2007084079A1 (en) | 2007-07-26 |
CN101384984B (zh) | 2011-11-02 |
EP1977307A1 (en) | 2008-10-08 |
BRPI0621722A2 (pt) | 2019-10-01 |
KR101017358B1 (ko) | 2011-02-28 |
US20090089486A1 (en) | 2009-04-02 |
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