SG124229A1 - Testing integrated circuits - Google Patents

Testing integrated circuits

Info

Publication number
SG124229A1
SG124229A1 SG200006278A SG200006278A SG124229A1 SG 124229 A1 SG124229 A1 SG 124229A1 SG 200006278 A SG200006278 A SG 200006278A SG 200006278 A SG200006278 A SG 200006278A SG 124229 A1 SG124229 A1 SG 124229A1
Authority
SG
Singapore
Prior art keywords
dies
integrated circuits
solder bump
testing integrated
bonded
Prior art date
Application number
SG200006278A
Other languages
English (en)
Inventor
Yinon Degani
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of SG124229A1 publication Critical patent/SG124229A1/en

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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
SG200006278A 1999-11-08 2000-11-01 Testing integrated circuits SG124229A1 (en)

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6680213B2 (en) * 2001-04-02 2004-01-20 Micron Technology, Inc. Method and system for fabricating contacts on semiconductor components
US7067916B2 (en) * 2001-06-20 2006-06-27 International Business Machines Corporation Extension of fatigue life for C4 solder ball to chip connection
US6784556B2 (en) * 2002-04-19 2004-08-31 Kulicke & Soffa Investments, Inc. Design of interconnection pads with separated probing and wire bonding regions
KR100585142B1 (ko) * 2004-05-04 2006-05-30 삼성전자주식회사 범프 테스트를 위한 플립 칩 반도체 패키지 및 그 제조방법
US20070046314A1 (en) * 2004-07-21 2007-03-01 Advanced Semiconductor Engineering, Inc. Process for testing IC wafer
DE102004047730B4 (de) * 2004-09-30 2017-06-22 Advanced Micro Devices, Inc. Ein Verfahren zum Dünnen von Halbleitersubstraten zur Herstellung von dünnen Halbleiterplättchen
JP4639245B2 (ja) * 2008-05-22 2011-02-23 パナソニック株式会社 半導体素子とそれを用いた半導体装置
KR101006521B1 (ko) * 2008-06-30 2011-01-07 주식회사 하이닉스반도체 반도체 패키지 및 이의 제조 방법
US8637983B2 (en) * 2008-12-19 2014-01-28 Ati Technologies Ulc Face-to-face (F2F) hybrid structure for an integrated circuit
US20100264522A1 (en) * 2009-04-20 2010-10-21 Chien-Pin Chen Semiconductor device having at least one bump without overlapping specific pad or directly contacting specific pad
US8797057B2 (en) * 2011-02-11 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Testing of semiconductor chips with microbumps
US9391040B2 (en) 2014-10-17 2016-07-12 International Business Machines Corporation Planarity-tolerant reworkable interconnect with integrated testing
KR102372355B1 (ko) 2015-08-26 2022-03-11 삼성전자주식회사 반도체 칩, 이의 제조방법, 및 이를 포함하는 반도체 패키지

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943553A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体素子の電極構造
US5258330A (en) * 1990-09-24 1993-11-02 Tessera, Inc. Semiconductor chip assemblies with fan-in leads
US5367763A (en) * 1993-09-30 1994-11-29 Atmel Corporation TAB testing of area array interconnected chips
US5517127A (en) * 1995-01-09 1996-05-14 International Business Machines Corporation Additive structure and method for testing semiconductor wire bond dies
US5783868A (en) * 1996-09-20 1998-07-21 Integrated Device Technology, Inc. Extended bond pads with a plurality of perforations
US5844317A (en) * 1995-12-21 1998-12-01 International Business Machines Corporation Consolidated chip design for wire bond and flip-chip package technologies
US5969417A (en) * 1996-08-27 1999-10-19 Nec Corporation Chip package device mountable on a mother board in whichever of facedown and wire bonding manners
WO2001035462A1 (en) * 1999-11-05 2001-05-17 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5502333A (en) * 1994-03-30 1996-03-26 International Business Machines Corporation Semiconductor stack structures and fabrication/sparing methods utilizing programmable spare circuit
US5554940A (en) * 1994-07-05 1996-09-10 Motorola, Inc. Bumped semiconductor device and method for probing the same
US5918107A (en) * 1998-04-13 1999-06-29 Micron Technology, Inc. Method and system for fabricating and testing assemblies containing wire bonded semiconductor dice
US6166556A (en) * 1998-05-28 2000-12-26 Motorola, Inc. Method for testing a semiconductor device and semiconductor device tested thereby

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943553A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体素子の電極構造
US5258330A (en) * 1990-09-24 1993-11-02 Tessera, Inc. Semiconductor chip assemblies with fan-in leads
US5367763A (en) * 1993-09-30 1994-11-29 Atmel Corporation TAB testing of area array interconnected chips
US5517127A (en) * 1995-01-09 1996-05-14 International Business Machines Corporation Additive structure and method for testing semiconductor wire bond dies
US5844317A (en) * 1995-12-21 1998-12-01 International Business Machines Corporation Consolidated chip design for wire bond and flip-chip package technologies
US5969417A (en) * 1996-08-27 1999-10-19 Nec Corporation Chip package device mountable on a mother board in whichever of facedown and wire bonding manners
US5783868A (en) * 1996-09-20 1998-07-21 Integrated Device Technology, Inc. Extended bond pads with a plurality of perforations
WO2001035462A1 (en) * 1999-11-05 2001-05-17 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads

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KR20010051538A (ko) 2001-06-25
EP1098363A3 (en) 2004-01-21
TW544829B (en) 2003-08-01
US20020075031A1 (en) 2002-06-20
US6342399B1 (en) 2002-01-29
JP2001201534A (ja) 2001-07-27

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