SG118239A1 - Lithographic processing method and device manufactured thereby - Google Patents

Lithographic processing method and device manufactured thereby

Info

Publication number
SG118239A1
SG118239A1 SG200402165A SG200402165A SG118239A1 SG 118239 A1 SG118239 A1 SG 118239A1 SG 200402165 A SG200402165 A SG 200402165A SG 200402165 A SG200402165 A SG 200402165A SG 118239 A1 SG118239 A1 SG 118239A1
Authority
SG
Singapore
Prior art keywords
processing method
device manufactured
lithographic processing
lithographic
manufactured
Prior art date
Application number
SG200402165A
Other languages
English (en)
Inventor
Andreas Kohler Carsten
Bernard Plechelmus Van Sch Jan
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG118239A1 publication Critical patent/SG118239A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200402165A 2003-04-24 2004-04-20 Lithographic processing method and device manufactured thereby SG118239A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03252585 2003-04-24

Publications (1)

Publication Number Publication Date
SG118239A1 true SG118239A1 (en) 2006-01-27

Family

ID=33522442

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200402165A SG118239A1 (en) 2003-04-24 2004-04-20 Lithographic processing method and device manufactured thereby

Country Status (6)

Country Link
US (1) US7374869B2 (ja)
JP (2) JP2004343100A (ja)
KR (1) KR100538299B1 (ja)
CN (1) CN100487578C (ja)
SG (1) SG118239A1 (ja)
TW (1) TWI240853B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043797B2 (en) * 2004-10-12 2011-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7310797B2 (en) * 2005-05-13 2007-12-18 Cadence Design Systems, Inc. Method and system for printing lithographic images with multiple exposures
US7737566B2 (en) * 2005-06-01 2010-06-15 Asml Netherlands B.V. Alignment devices and methods for providing phase depth control
US20070015088A1 (en) * 2005-07-15 2007-01-18 Chin-Lung Lin Method for lithographically printing tightly nested and isolated hole features using double exposure
US7582413B2 (en) * 2005-09-26 2009-09-01 Asml Netherlands B.V. Substrate, method of exposing a substrate, machine readable medium
US7824842B2 (en) * 2005-10-05 2010-11-02 Asml Netherlands B.V. Method of patterning a positive tone resist layer overlaying a lithographic substrate
JP2007140212A (ja) * 2005-11-18 2007-06-07 Toshiba Corp フォトマスク及び半導体装置の製造方法
DE102006004230B4 (de) * 2006-01-30 2008-11-06 Qimonda Ag Verfahren zur Herstellung einer Maske für die lithografische Projektion eines Musters auf ein Substrat
US7530159B2 (en) * 2006-06-29 2009-05-12 Hitachi Global Storage Technologies Netherlands B.V. Method of distortion correction in shrink processes for fabrication of write poles
US7934177B2 (en) * 2007-02-06 2011-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for a pattern layout split
JP2009004535A (ja) * 2007-06-21 2009-01-08 Toshiba Corp パターン形成方法
NL2003386A (en) * 2008-09-26 2010-03-29 Brion Tech Inc Lithographic processing method, and device manufactured thereby.
CN101907825B (zh) * 2010-07-07 2012-05-09 湖北联合天诚防伪技术股份有限公司 一种光刻加密防伪方法
JP5961429B2 (ja) * 2012-03-30 2016-08-02 株式会社アドテックエンジニアリング 露光描画装置及び露光描画方法
US9087740B2 (en) * 2013-12-09 2015-07-21 International Business Machines Corporation Fabrication of lithographic image fields using a proximity stitch metrology
JP6427452B2 (ja) * 2015-03-30 2018-11-21 株式会社Ｓｃｒｅｅｎホールディングス 露光データ生成方法、製造方法、露光データ生成装置、露光データ生成プログラム、および、製造システム
CN106200279B (zh) * 2016-09-22 2018-06-26 上海华虹宏力半导体制造有限公司 一种用于光刻版图opc的采样方法及装置
CN111324003B (zh) * 2018-12-14 2023-10-13 夏泰鑫半导体(青岛)有限公司 光掩模图案修正的方法
US11874595B2 (en) * 2020-08-27 2024-01-16 Micron Technology, Inc. Reticle constructions and photo-processing methods

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2892765B2 (ja) * 1990-04-27 1999-05-17 株式会社日立製作所 パターン構造を有する素子の製造方法
JPH07147219A (ja) * 1993-11-24 1995-06-06 Sony Corp パターンの形成方法
JP3071401B2 (ja) * 1996-07-05 2000-07-31 三菱電機株式会社 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
JP3385325B2 (ja) * 1998-11-09 2003-03-10 日本電気株式会社 格子パターンの露光方法および露光装置
DE19937742B4 (de) * 1999-08-10 2008-04-10 Infineon Technologies Ag Übertragung eines Musters hoher Strukturdichte durch multiple Belichtung weniger dichter Teilmuster
JP3581628B2 (ja) * 2000-03-13 2004-10-27 沖電気工業株式会社 半導体装置の製造方法
TW455925B (en) * 2000-05-15 2001-09-21 Winbond Electronics Corp Method to reduce the optical proximity effect
JP2002057084A (ja) * 2000-08-09 2002-02-22 Sony Corp 半導体装置の製造方法および露光用マスク
JP2002278040A (ja) * 2001-03-16 2002-09-27 Matsushita Electric Ind Co Ltd ハーフトーン型位相シフトマスク及びホールパターン形成方法
US6873720B2 (en) * 2001-03-20 2005-03-29 Synopsys, Inc. System and method of providing mask defect printability analysis
JP2002289500A (ja) * 2001-03-27 2002-10-04 Matsushita Electric Ind Co Ltd ホールパターン形成方法
US6544695B2 (en) * 2001-04-11 2003-04-08 Winbond Electronics Corp. Photomask set for photolithographic operation
US6784005B2 (en) * 2002-02-16 2004-08-31 Taiwan Semiconductor Manufacturing Co., Ltd Photoresist reflow for enhanced process window for random, isolated, semi-dense, and other non-dense contacts

Also Published As

Publication number Publication date
KR100538299B1 (ko) 2005-12-21
TWI240853B (en) 2005-10-01
TW200428163A (en) 2004-12-16
US20040265710A1 (en) 2004-12-30
JP5001235B2 (ja) 2012-08-15
US7374869B2 (en) 2008-05-20
JP2009004799A (ja) 2009-01-08
JP2004343100A (ja) 2004-12-02
CN1540445A (zh) 2004-10-27
CN100487578C (zh) 2009-05-13
KR20040093042A (ko) 2004-11-04

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