SG114735A1 - A self-pinned read sensor design with enhanced lead stabilizing mechanism - Google Patents

A self-pinned read sensor design with enhanced lead stabilizing mechanism

Info

Publication number
SG114735A1
SG114735A1 SG200500896A SG200500896A SG114735A1 SG 114735 A1 SG114735 A1 SG 114735A1 SG 200500896 A SG200500896 A SG 200500896A SG 200500896 A SG200500896 A SG 200500896A SG 114735 A1 SG114735 A1 SG 114735A1
Authority
SG
Singapore
Prior art keywords
self
stabilizing mechanism
read sensor
sensor design
enhanced lead
Prior art date
Application number
SG200500896A
Other languages
English (en)
Inventor
Ding Meng
E Fontana Robert Jr
San Ho Kuok
Leslie Robertson Neil
Hwa Tsang Ching
Original Assignee
Hitachi Global Storage Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Global Storage Tech filed Critical Hitachi Global Storage Tech
Publication of SG114735A1 publication Critical patent/SG114735A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
SG200500896A 2004-02-18 2005-02-16 A self-pinned read sensor design with enhanced lead stabilizing mechanism SG114735A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/781,548 US7463459B2 (en) 2004-02-18 2004-02-18 Self-pinned read sensor design with enhanced lead stabilizing mechanism

Publications (1)

Publication Number Publication Date
SG114735A1 true SG114735A1 (en) 2005-09-28

Family

ID=34711851

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200500896A SG114735A1 (en) 2004-02-18 2005-02-16 A self-pinned read sensor design with enhanced lead stabilizing mechanism

Country Status (7)

Country Link
US (1) US7463459B2 (fr)
EP (1) EP1566650A3 (fr)
JP (1) JP2005235371A (fr)
KR (1) KR20060042980A (fr)
CN (1) CN100361199C (fr)
SG (1) SG114735A1 (fr)
TW (1) TW200529482A (fr)

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US7218486B2 (en) * 2004-06-28 2007-05-15 Hitachi Global Storage Technologies Netherlands B.V. Extended pinned layer on top of lead/HB to avoid amplitude flipping
US7414817B2 (en) * 2005-02-07 2008-08-19 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having a laminated hard magnet structure for free layer biasing
JP2006261453A (ja) * 2005-03-17 2006-09-28 Fujitsu Ltd 磁気抵抗効果素子およびその製造方法
US20070091514A1 (en) * 2005-10-21 2007-04-26 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive (MR) elements having improved hard bias seed layers
US20100264052A1 (en) * 2006-03-20 2010-10-21 Semersky Frank E Foamed-wall container with foamed and unfoamed regions
US8557708B2 (en) 2007-05-02 2013-10-15 HGST Netherlands B.V. Methods for fabricating a magnetic head reader using a chemical mechanical polishing (CMP) process for sensor stripe height patterning
US8068315B2 (en) * 2007-09-26 2011-11-29 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers
JP4952725B2 (ja) 2009-01-14 2012-06-13 ソニー株式会社 不揮発性磁気メモリ装置
JP5338711B2 (ja) * 2010-02-23 2013-11-13 Ｔｄｋ株式会社 磁気センサー、磁気検出装置、及び磁気ヘッド
US8526137B2 (en) * 2010-04-16 2013-09-03 International Business Machines Corporation Head comprising a crystalline alumina layer
CN102323560A (zh) * 2011-06-01 2012-01-18 浙江省电力公司 一种互感器在线检测用工装板
US9562916B2 (en) 2011-06-01 2017-02-07 Zhejiang Electric Power Corporation Full-automatic detecting system and method for transformer
US8675318B1 (en) 2011-11-22 2014-03-18 Western Digital (Fremont), Llc Method and system for providing a read transducer having a reduced shield-to-shield spacing
US9269382B1 (en) 2012-06-29 2016-02-23 Western Digital (Fremont), Llc Method and system for providing a read transducer having improved pinning of the pinned layer at higher recording densities
US8711528B1 (en) 2012-06-29 2014-04-29 Western Digital (Fremont), Llc Tunnel magnetoresistance read head with narrow shield-to-shield spacing
US8760822B1 (en) 2012-11-28 2014-06-24 Western Digital (Fremont), Llc Method and system for providing a read transducer having an extended pinned layer and soft magnetic bias structures with improved stability
US8896974B2 (en) * 2013-03-29 2014-11-25 Tdk Corporation Thin film magnetic head with side layers under compression stress
US9318130B1 (en) 2013-07-02 2016-04-19 Western Digital (Fremont), Llc Method to fabricate tunneling magnetic recording heads with extended pinned layer
US9618589B2 (en) 2013-10-18 2017-04-11 Infineon Technologies Ag First and second magneto-resistive sensors formed by first and second sections of a layer stack
US9214172B2 (en) 2013-10-23 2015-12-15 Western Digital (Fremont), Llc Method of manufacturing a magnetic read head
US9147404B1 (en) 2015-03-31 2015-09-29 Western Digital (Fremont), Llc Method and system for providing a read transducer having a dual free layer
US9666214B1 (en) 2015-09-23 2017-05-30 Western Digital (Fremont), Llc Free layer magnetic reader that may have a reduced shield-to-shield spacing

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US5583725A (en) * 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
JPH10302227A (ja) * 1997-04-28 1998-11-13 Victor Co Of Japan Ltd 磁気抵抗効果型ヘッド
JP2924875B2 (ja) * 1997-10-17 1999-07-26 日本電気株式会社 磁気抵抗効果ヘッド
US5898547A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
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JP3793669B2 (ja) 1999-08-26 2006-07-05 株式会社日立グローバルストレージテクノロジーズ 巨大磁気抵抗効果ヘッド、薄膜磁気ヘッドならびに磁気記録再生装置
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US6867953B2 (en) * 2003-07-02 2005-03-15 Hitachi Global Storage Technologies Netherlands B.V. Self-pinned in-stack bias structure with improved pinning
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US7084467B2 (en) * 2003-07-25 2006-08-01 Hitachi Global Storage Technologies Netherlands B.V. Spin valve transistor with self-pinned antiparallel pinned layer structure
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Also Published As

Publication number Publication date
EP1566650A3 (fr) 2009-07-29
US7463459B2 (en) 2008-12-09
EP1566650A2 (fr) 2005-08-24
US20050180061A1 (en) 2005-08-18
KR20060042980A (ko) 2006-05-15
CN100361199C (zh) 2008-01-09
CN1658288A (zh) 2005-08-24
TW200529482A (en) 2005-09-01
JP2005235371A (ja) 2005-09-02

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