SG113403A1 - Low-voltage digital rom circuit and method - Google Patents
Low-voltage digital rom circuit and methodInfo
- Publication number
- SG113403A1 SG113403A1 SG200200314A SG200200314A SG113403A1 SG 113403 A1 SG113403 A1 SG 113403A1 SG 200200314 A SG200200314 A SG 200200314A SG 200200314 A SG200200314 A SG 200200314A SG 113403 A1 SG113403 A1 SG 113403A1
- Authority
- SG
- Singapore
- Prior art keywords
- low
- voltage digital
- rom circuit
- digital rom
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/898,796 US6430078B1 (en) | 2001-07-03 | 2001-07-03 | Low-voltage digital ROM circuit and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG113403A1 true SG113403A1 (en) | 2005-08-29 |
Family
ID=25410046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200200314A SG113403A1 (en) | 2001-07-03 | 2002-01-16 | Low-voltage digital rom circuit and method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6430078B1 (ko) |
| JP (1) | JP2003115193A (ko) |
| KR (1) | KR100902476B1 (ko) |
| SG (1) | SG113403A1 (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4352019B2 (ja) * | 2005-04-22 | 2009-10-28 | キヤノン株式会社 | インクジェット記録ヘッドおよび該ヘッドを用いるインクジェット記録装置 |
| US8125815B2 (en) * | 2008-12-18 | 2012-02-28 | Lsi Corporation | Transistor bit cell ROM architecture |
| KR102496506B1 (ko) | 2016-10-14 | 2023-02-06 | 삼성전자주식회사 | 복수의 퓨즈 비트들을 독출하는 오티피 메모리 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690489A (en) * | 1979-12-24 | 1981-07-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
| EP0598400A2 (en) * | 1992-11-18 | 1994-05-25 | Nec Corporation | Semiconductor memory device |
| EP0814481A1 (en) * | 1996-06-18 | 1997-12-29 | STMicroelectronics S.r.l. | Low-supply-voltage nonvolatile memory device with voltage boosting |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4845679A (en) * | 1987-03-30 | 1989-07-04 | Honeywell Inc. | Diode-FET logic circuitry |
| US5459693A (en) * | 1990-06-14 | 1995-10-17 | Creative Integrated Systems, Inc. | Very large scale integrated planar read only memory |
| KR100304813B1 (ko) * | 1992-12-28 | 2001-11-22 | 사와무라 시코 | 부성저항회로와이를사용한슈미트트리거회로 |
| JP2687852B2 (ja) * | 1993-10-13 | 1997-12-08 | 日本電気株式会社 | 半導体メモリ装置 |
| JPH0935490A (ja) * | 1995-07-17 | 1997-02-07 | Yamaha Corp | 半導体記憶装置 |
-
2001
- 2001-07-03 US US09/898,796 patent/US6430078B1/en not_active Expired - Lifetime
-
2002
- 2002-01-16 SG SG200200314A patent/SG113403A1/en unknown
- 2002-07-02 JP JP2002193304A patent/JP2003115193A/ja not_active Withdrawn
- 2002-07-03 KR KR1020020038120A patent/KR100902476B1/ko not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690489A (en) * | 1979-12-24 | 1981-07-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
| EP0598400A2 (en) * | 1992-11-18 | 1994-05-25 | Nec Corporation | Semiconductor memory device |
| EP0814481A1 (en) * | 1996-06-18 | 1997-12-29 | STMicroelectronics S.r.l. | Low-supply-voltage nonvolatile memory device with voltage boosting |
Also Published As
| Publication number | Publication date |
|---|---|
| US6430078B1 (en) | 2002-08-06 |
| JP2003115193A (ja) | 2003-04-18 |
| KR100902476B1 (ko) | 2009-06-11 |
| KR20030004123A (ko) | 2003-01-14 |
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