SG112972A1 - Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby - Google Patents

Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby

Info

Publication number
SG112972A1
SG112972A1 SG200407393A SG200407393A SG112972A1 SG 112972 A1 SG112972 A1 SG 112972A1 SG 200407393 A SG200407393 A SG 200407393A SG 200407393 A SG200407393 A SG 200407393A SG 112972 A1 SG112972 A1 SG 112972A1
Authority
SG
Singapore
Prior art keywords
testing
lithographic apparatus
patch arrangement
grating patch
device manufacturing
Prior art date
Application number
SG200407393A
Other languages
English (en)
Inventor
Sherman Poultney
Haico Victor Kok
Original Assignee
Asml Netherlands Bv
Asml Holding Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv, Asml Holding Nv filed Critical Asml Netherlands Bv
Publication of SG112972A1 publication Critical patent/SG112972A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Semiconductor Lasers (AREA)
SG200407393A 2003-12-19 2004-12-15 Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby SG112972A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/739,525 US7113255B2 (en) 2003-12-19 2003-12-19 Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby

Publications (1)

Publication Number Publication Date
SG112972A1 true SG112972A1 (en) 2005-07-28

Family

ID=34523189

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200407393A SG112972A1 (en) 2003-12-19 2004-12-15 Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby

Country Status (7)

Country Link
US (1) US7113255B2 (ja)
EP (1) EP1544677B1 (ja)
JP (1) JP4414327B2 (ja)
KR (1) KR100632887B1 (ja)
CN (1) CN100576079C (ja)
SG (1) SG112972A1 (ja)
TW (1) TWI263121B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4083751B2 (ja) * 2004-01-29 2008-04-30 エーエスエムエル ホールディング エヌ．ブイ． 空間光変調器アレイを較正するシステムおよび空間光変調器アレイを較正する方法
US20050259269A1 (en) 2004-05-19 2005-11-24 Asml Holding N.V. Shearing interferometer with dynamic pupil fill
US20060001890A1 (en) * 2004-07-02 2006-01-05 Asml Holding N.V. Spatial light modulator as source module for DUV wavefront sensor
US7889315B2 (en) * 2006-04-13 2011-02-15 Asml Netherlands B.V. Lithographic apparatus, lens interferometer and device manufacturing method
US7875528B2 (en) * 2007-02-07 2011-01-25 International Business Machines Corporation Method, system, program product for bonding two circuitry-including substrates and related stage
SG153747A1 (en) * 2007-12-13 2009-07-29 Asml Netherlands Bv Alignment method, alignment system and product with alignment mark
CN101487992B (zh) * 2009-03-04 2010-10-20 上海微电子装备有限公司 一种硅片标记捕获系统与方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4585342A (en) * 1984-06-29 1986-04-29 International Business Machines Corporation System for real-time monitoring the characteristics, variations and alignment errors of lithography structures
NL8601278A (nl) 1986-05-21 1987-12-16 Philips Nv Inrichting voor het detekteren van een vergrotingsfout in een optisch afbeeldingssysteem.
US5062705A (en) 1989-09-13 1991-11-05 Matsushita Electric Industrial Co., Ltd. Apparatus for evaluating a lens
JP3297545B2 (ja) * 1994-09-02 2002-07-02 キヤノン株式会社 露光条件及び投影光学系の収差測定方法
US5808742A (en) * 1995-05-31 1998-09-15 Massachusetts Institute Of Technology Optical alignment apparatus having multiple parallel alignment marks
JP2000505958A (ja) 1996-12-24 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ２個の物品ホルダを有する二次元バランス位置決め装置及びこの位置決め装置を有するリソグラフ装置
WO1998040791A1 (en) 1997-03-10 1998-09-17 Koninklijke Philips Electronics N.V. Positioning device having two object holders
US5767959A (en) * 1997-03-28 1998-06-16 Nikon Corporation Lens distortion measurement using moire fringes
US5851701A (en) * 1997-04-01 1998-12-22 Micron Technology, Inc. Atom lithographic mask having diffraction grating and attenuated phase shifters
JP3634550B2 (ja) 1997-04-03 2005-03-30 株式会社ルネサステクノロジ 投影レンズの収差測定方法
JP4109736B2 (ja) * 1997-11-14 2008-07-02 キヤノン株式会社 位置ずれ検出方法
US7016025B1 (en) 1999-06-24 2006-03-21 Asml Holding N.V. Method and apparatus for characterization of optical systems
US6360012B1 (en) 1999-06-25 2002-03-19 Svg Lithography Systems, Inc. In situ projection optic metrology method and apparatus
TW550377B (en) 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
US6747282B2 (en) * 2001-06-13 2004-06-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6772084B2 (en) * 2002-01-31 2004-08-03 Timbre Technologies, Inc. Overlay measurements using periodic gratings
US6780550B2 (en) * 2002-06-28 2004-08-24 Timbre Technologies, Inc. Single pass lithography overlay technique
US6864956B1 (en) * 2003-03-19 2005-03-08 Silterra Malaysia Sdn. Bhd. Dual phase grating alignment marks

Also Published As

Publication number Publication date
JP2005183983A (ja) 2005-07-07
JP4414327B2 (ja) 2010-02-10
CN100576079C (zh) 2009-12-30
CN1637611A (zh) 2005-07-13
EP1544677B1 (en) 2012-05-30
EP1544677A1 (en) 2005-06-22
TW200523687A (en) 2005-07-16
US20050134824A1 (en) 2005-06-23
US7113255B2 (en) 2006-09-26
KR20050062428A (ko) 2005-06-23
TWI263121B (en) 2006-10-01
KR100632887B1 (ko) 2006-10-16

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