TWI263121B - Grating patch arrangement and testing method thereof and lithographic apparatus - Google Patents

Grating patch arrangement and testing method thereof and lithographic apparatus

Info

Publication number
TWI263121B
TWI263121B TW093137627A TW93137627A TWI263121B TW I263121 B TWI263121 B TW I263121B TW 093137627 A TW093137627 A TW 093137627A TW 93137627 A TW93137627 A TW 93137627A TW I263121 B TWI263121 B TW I263121B
Authority
TW
Taiwan
Prior art keywords
grating patch
lithographic apparatus
testing method
patch arrangement
module
Prior art date
Application number
TW093137627A
Other languages
English (en)
Other versions
TW200523687A (en
Inventor
Sherman Poultney
Haico Victor Kok
Original Assignee
Asml Netherlands Bv
Asml Holding Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv, Asml Holding Nv filed Critical Asml Netherlands Bv
Publication of TW200523687A publication Critical patent/TW200523687A/zh
Application granted granted Critical
Publication of TWI263121B publication Critical patent/TWI263121B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Semiconductor Lasers (AREA)
TW093137627A 2003-12-19 2004-12-06 Grating patch arrangement and testing method thereof and lithographic apparatus TWI263121B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/739,525 US7113255B2 (en) 2003-12-19 2003-12-19 Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby

Publications (2)

Publication Number Publication Date
TW200523687A TW200523687A (en) 2005-07-16
TWI263121B true TWI263121B (en) 2006-10-01

Family

ID=34523189

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093137627A TWI263121B (en) 2003-12-19 2004-12-06 Grating patch arrangement and testing method thereof and lithographic apparatus

Country Status (7)

Country Link
US (1) US7113255B2 (zh)
EP (1) EP1544677B1 (zh)
JP (1) JP4414327B2 (zh)
KR (1) KR100632887B1 (zh)
CN (1) CN100576079C (zh)
SG (1) SG112972A1 (zh)
TW (1) TWI263121B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4083751B2 (ja) * 2004-01-29 2008-04-30 エーエスエムエル ホールディング エヌ．ブイ． 空間光変調器アレイを較正するシステムおよび空間光変調器アレイを較正する方法
US20050259269A1 (en) 2004-05-19 2005-11-24 Asml Holding N.V. Shearing interferometer with dynamic pupil fill
US20060001890A1 (en) * 2004-07-02 2006-01-05 Asml Holding N.V. Spatial light modulator as source module for DUV wavefront sensor
US7889315B2 (en) * 2006-04-13 2011-02-15 Asml Netherlands B.V. Lithographic apparatus, lens interferometer and device manufacturing method
US7875528B2 (en) * 2007-02-07 2011-01-25 International Business Machines Corporation Method, system, program product for bonding two circuitry-including substrates and related stage
SG153747A1 (en) * 2007-12-13 2009-07-29 Asml Netherlands Bv Alignment method, alignment system and product with alignment mark
CN101487992B (zh) * 2009-03-04 2010-10-20 上海微电子装备有限公司 一种硅片标记捕获系统与方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4585342A (en) * 1984-06-29 1986-04-29 International Business Machines Corporation System for real-time monitoring the characteristics, variations and alignment errors of lithography structures
NL8601278A (nl) 1986-05-21 1987-12-16 Philips Nv Inrichting voor het detekteren van een vergrotingsfout in een optisch afbeeldingssysteem.
US5062705A (en) 1989-09-13 1991-11-05 Matsushita Electric Industrial Co., Ltd. Apparatus for evaluating a lens
JP3297545B2 (ja) * 1994-09-02 2002-07-02 キヤノン株式会社 露光条件及び投影光学系の収差測定方法
US5808742A (en) * 1995-05-31 1998-09-15 Massachusetts Institute Of Technology Optical alignment apparatus having multiple parallel alignment marks
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands Bv In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
USRE40043E1 (en) 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
US5767959A (en) * 1997-03-28 1998-06-16 Nikon Corporation Lens distortion measurement using moire fringes
US5851701A (en) 1997-04-01 1998-12-22 Micron Technology, Inc. Atom lithographic mask having diffraction grating and attenuated phase shifters
JP3634550B2 (ja) 1997-04-03 2005-03-30 株式会社ルネサステクノロジ 投影レンズの収差測定方法
JP4109736B2 (ja) * 1997-11-14 2008-07-02 キヤノン株式会社 位置ずれ検出方法
US7016025B1 (en) 1999-06-24 2006-03-21 Asml Holding N.V. Method and apparatus for characterization of optical systems
US6360012B1 (en) 1999-06-25 2002-03-19 Svg Lithography Systems, Inc. In situ projection optic metrology method and apparatus
TW550377B (en) 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
US6747282B2 (en) 2001-06-13 2004-06-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6772084B2 (en) * 2002-01-31 2004-08-03 Timbre Technologies, Inc. Overlay measurements using periodic gratings
US6780550B2 (en) * 2002-06-28 2004-08-24 Timbre Technologies, Inc. Single pass lithography overlay technique
US6864956B1 (en) * 2003-03-19 2005-03-08 Silterra Malaysia Sdn. Bhd. Dual phase grating alignment marks

Also Published As

Publication number Publication date
US7113255B2 (en) 2006-09-26
US20050134824A1 (en) 2005-06-23
KR100632887B1 (ko) 2006-10-16
JP4414327B2 (ja) 2010-02-10
CN1637611A (zh) 2005-07-13
JP2005183983A (ja) 2005-07-07
SG112972A1 (en) 2005-07-28
CN100576079C (zh) 2009-12-30
KR20050062428A (ko) 2005-06-23
EP1544677A1 (en) 2005-06-22
TW200523687A (en) 2005-07-16
EP1544677B1 (en) 2012-05-30

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