SG112079A1 - Method and apparatus for testing magnetic head with tmr element - Google Patents

Method and apparatus for testing magnetic head with tmr element

Info

Publication number
SG112079A1
SG112079A1 SG200407067A SG200407067A SG112079A1 SG 112079 A1 SG112079 A1 SG 112079A1 SG 200407067 A SG200407067 A SG 200407067A SG 200407067 A SG200407067 A SG 200407067A SG 112079 A1 SG112079 A1 SG 112079A1
Authority
SG
Singapore
Prior art keywords
magnetic head
tmr element
testing magnetic
testing
tmr
Prior art date
Application number
SG200407067A
Other languages
English (en)
Inventor
Naka Hiroyuki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of SG112079A1 publication Critical patent/SG112079A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/455—Arrangements for functional testing of heads; Measuring arrangements for heads
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
SG200407067A 2003-11-27 2004-11-09 Method and apparatus for testing magnetic head with tmr element SG112079A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003398157A JP4184936B2 (ja) 2003-11-27 2003-11-27 磁気ヘッド検査装置、磁気ヘッド検査方法及びディスクドライブ

Publications (1)

Publication Number Publication Date
SG112079A1 true SG112079A1 (en) 2005-06-29

Family

ID=34616559

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200407067A SG112079A1 (en) 2003-11-27 2004-11-09 Method and apparatus for testing magnetic head with tmr element

Country Status (4)

Country Link
US (3) US7193824B2 (ja)
JP (1) JP4184936B2 (ja)
CN (1) CN1305028C (ja)
SG (1) SG112079A1 (ja)

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JP2005078750A (ja) * 2003-09-02 2005-03-24 Toshiba Corp 磁気記録再生装置
TWI316178B (en) * 2005-02-25 2009-10-21 Hon Hai Prec Ind Co Ltd An apparatus and method for detecting and correcting the cpu temperature
JP2007317303A (ja) * 2006-05-25 2007-12-06 Fujitsu Ltd 磁気抵抗効果ヘッドの検査方法および検査装置
US7545139B2 (en) 2007-04-25 2009-06-09 Tdk Corporation Testing method and apparatus of thin-film magnetic head
US20090153995A1 (en) * 2007-12-12 2009-06-18 Samsung Electronics Co., Ltd. Temperature coefficient of resistance measurement of TMR head using flying height control heater and determine maximum bias voltage of TMR heads
US7815369B2 (en) 2008-02-20 2010-10-19 Tdk Corporation Method of measuring temperature of tunnel magnetoresistive effect element
US8120353B2 (en) 2008-04-28 2012-02-21 International Business Machines Corporation Methods for detecting damage to magnetoresistive sensors
US8018226B2 (en) 2008-04-28 2011-09-13 International Business Machines Corporation Methods for detecting damage to magnetoresistive sensors
US8040131B2 (en) * 2008-07-01 2011-10-18 Hitachi Global Storage Technologies Netherlands B.V. Method for testing the acceptability of a magnetic read sensor
US8008912B1 (en) 2008-12-16 2011-08-30 Western Digital (Fremont), Llc Method and system for testing P2 stiffness of a magnetoresistance transducer at the wafer level
US8653824B1 (en) 2009-12-16 2014-02-18 Western Digital (Fremont), Llc Delta temperature test method and system
US8618793B2 (en) * 2009-12-23 2013-12-31 HGST Netherlands B.V. High sensitivity glide sensor using frictional heating
CN102564637B (zh) * 2010-12-15 2015-09-09 新科实业有限公司 磁隧道结中偏流/偏压引起的升温的测量方法
CN102707246B (zh) * 2011-03-28 2016-01-20 新科实业有限公司 测量隧道磁电阻传感器中纵向偏磁场的方法
US8804272B1 (en) 2013-07-01 2014-08-12 Seagate Technology Llc Clearance sensor and circuitry using adjustable channel parameters
US9548070B1 (en) * 2015-06-25 2017-01-17 Western Digital Technologies, Inc. HDD magnetic head degradation field-failure detection and prediction
US9568704B1 (en) * 2015-08-17 2017-02-14 Apple Inc. Temperature based control of voice coil motor
KR101774671B1 (ko) * 2015-12-24 2017-09-05 한양대학교 산학협력단 Mram에서 불량 셀 스크린을 위한 테스트 방법 및 시스템
CN105741860B (zh) * 2016-01-30 2018-08-28 中钧科技(深圳)有限公司 硬盘磁头检测装置
US9620154B1 (en) * 2016-09-08 2017-04-11 International Business Machines Corporation Characterization of dielectric breakdown in TMR sensors

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JPH06118126A (ja) 1992-10-06 1994-04-28 Hitachi Ltd 温度係数測定方法および測定装置
US5440233A (en) * 1993-04-30 1995-08-08 International Business Machines Corporation Atomic layered materials and temperature control for giant magnetoresistive sensor
US6090549A (en) * 1996-01-16 2000-07-18 University Of Chicago Use of continuous/contiguous stacking hybridization as a diagnostic tool
JP2962234B2 (ja) 1996-08-07 1999-10-12 日本電気株式会社 半導体デバイスの寄生ＭＩＭ構造箇所解析法及びＳｉ半導体デバイスの寄生ＭＩＭ構造箇所解析法
US5729410A (en) 1996-11-27 1998-03-17 International Business Machines Corporation Magnetic tunnel junction device with longitudinal biasing
US5880899A (en) 1997-02-25 1999-03-09 International Business Machines Corporation Removal of raised irregularities on a data storage disk with controlled abrasion by a magnetoresistive head
US5898547A (en) 1997-10-24 1999-04-27 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
US6195219B1 (en) * 1998-10-20 2001-02-27 International Business Machines Corporation Method and apparatus for improving a thermal response of a magnetoresistive element
JP3557493B2 (ja) * 1999-06-08 2004-08-25 Ｔｄｋ株式会社 強磁性トンネル磁気抵抗効果素子の製造方法
JP2001084523A (ja) * 1999-09-10 2001-03-30 Tdk Corp トンネル磁気抵抗効果型薄膜磁気ヘッド及び該ヘッドの製造方法
JP2001084540A (ja) 1999-09-14 2001-03-30 Hitachi Ltd 磁気ヘッドの検査方法および検査装置
JP2001085218A (ja) * 1999-09-17 2001-03-30 Sharp Corp 強磁性金属酸化物多結晶体及びその製造方法
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US6680831B2 (en) * 2000-09-11 2004-01-20 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film
JP2002237012A (ja) 2001-02-13 2002-08-23 Toshiba Corp 磁気ディスク装置
US6898040B2 (en) * 2001-12-06 2005-05-24 Samsung Electronics Co., Ltd Method and apparatus determining maximum read bias current and maximum write current for disk merged read/write heads based upon write current and measured read resistance
US6841395B2 (en) * 2002-11-25 2005-01-11 International Business Machines Corporation Method of forming a barrier layer of a tunneling magnetoresistive sensor
JP4262969B2 (ja) * 2002-12-05 2009-05-13 株式会社ルネサステクノロジ 薄膜磁性体記憶装置

Also Published As

Publication number Publication date
JP4184936B2 (ja) 2008-11-19
US20050116721A1 (en) 2005-06-02
US20080291577A1 (en) 2008-11-27
JP2005158195A (ja) 2005-06-16
US7667456B2 (en) 2010-02-23
CN1627369A (zh) 2005-06-15
CN1305028C (zh) 2007-03-14
US20070139053A1 (en) 2007-06-21
US7317597B2 (en) 2008-01-08
US7193824B2 (en) 2007-03-20

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