SG112033A1 - Radiation detector - Google Patents

Radiation detector

Info

Publication number
SG112033A1
SG112033A1 SG200406426A SG200406426A SG112033A1 SG 112033 A1 SG112033 A1 SG 112033A1 SG 200406426 A SG200406426 A SG 200406426A SG 200406426 A SG200406426 A SG 200406426A SG 112033 A1 SG112033 A1 SG 112033A1
Authority
SG
Singapore
Prior art keywords
radiation detector
detector
radiation
Prior art date
Application number
SG200406426A
Other languages
English (en)
Inventor
Levinus Pieter Bakker
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG112033A1 publication Critical patent/SG112033A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Measurement Of Radiation (AREA)
SG200406426A 2003-11-07 2004-11-05 Radiation detector SG112033A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03078516 2003-11-07

Publications (1)

Publication Number Publication Date
SG112033A1 true SG112033A1 (en) 2005-06-29

Family

ID=34684555

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200406426A SG112033A1 (en) 2003-11-07 2004-11-05 Radiation detector

Country Status (6)

Country Link
US (1) US20050173647A1 (ja)
JP (1) JP4359224B2 (ja)
KR (1) KR100718744B1 (ja)
CN (1) CN1619422A (ja)
SG (1) SG112033A1 (ja)
TW (1) TWI294554B (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7087907B1 (en) * 2004-02-02 2006-08-08 Advanced Micro Devices, Inc. Detection of contamination in imaging systems by fluorescence and/or absorption spectroscopy
JP2006226936A (ja) * 2005-02-21 2006-08-31 Canon Inc 測定方法、露光装置及びデバイス製造方法
US7405417B2 (en) * 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
US7329876B2 (en) * 2006-01-26 2008-02-12 Xtreme Technologies Gmbh Narrow-band transmission filter for EUV radiation
US7541603B2 (en) * 2006-09-27 2009-06-02 Asml Netherlands B.V. Radiation system and lithographic apparatus comprising the same
US8138485B2 (en) 2007-06-25 2012-03-20 Asml Netherlands B.V. Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector
EP2053463B1 (en) 2007-10-23 2011-06-08 Imec Detection of contamination in EUV systems
JP5176817B2 (ja) * 2008-09-24 2013-04-03 凸版印刷株式会社 反射型フォトマスクブランク、反射型フォトマスク、その検査方法及び検査装置
DE102009046098A1 (de) * 2009-10-28 2011-05-05 Carl Zeiss Smt Gmbh Katadioptrisches Projektionsobjektiv mit einer reflektiven optischen Komponente und einer Messeinrichtung
DE102010006326A1 (de) * 2010-01-29 2011-08-04 Asml Netherlands B.V. Anordnung zur Verwendung in einer Projektionsbelichtungsanlage für die Mikrolithographie mit einem reflektiven optischen Element
DE102011085132A1 (de) * 2010-11-24 2012-05-24 Carl Zeiss Smt Gmbh Optische Baugruppe für die Projektionslithografie
US8770813B2 (en) 2010-12-23 2014-07-08 Microsoft Corporation Transparent display backlight assembly
US9325948B2 (en) * 2012-11-13 2016-04-26 Qualcomm Mems Technologies, Inc. Real-time compensation for blue shift of electromechanical systems display devices
CN103198995A (zh) * 2013-03-27 2013-07-10 哈尔滨工业大学 采用LuAG-Ce荧光屏实现的毛细管放电极紫外光刻光源等离子体状态检测系统
CN103162848A (zh) * 2013-03-27 2013-06-19 哈尔滨工业大学 YAG:Ce荧光屏实现毛细管放电极紫外光刻光源等离子体状态检测系统
DE102013214008A1 (de) * 2013-07-17 2015-01-22 Carl Zeiss Smt Gmbh Optikanordnung
CN106483547B (zh) * 2016-09-23 2018-12-11 河南师范大学 基于cmos和arm的伽马辐射探测器
KR20220066963A (ko) * 2019-11-05 2022-05-24 에이에스엠엘 네델란즈 비.브이. 측정 방법 및 측정 장치
DE102022209922A1 (de) 2022-09-21 2023-09-21 Carl Zeiss Smt Gmbh Reflektometervorrichtung, messanordnung, verfahren zum herstellen eines optischen referenzelements und verfahren zum vermessen einer probe einer lithographieanlage

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2638914B2 (ja) * 1988-04-22 1997-08-06 富士通株式会社 露光用ｘ線の強度測定方法
JP2000346817A (ja) * 1999-06-07 2000-12-15 Nikon Corp 測定装置、照射装置および露光方法
JP3730548B2 (ja) * 2000-08-25 2006-01-05 エイエスエム リトグラフィー ベスローテン フエンノートシャップ 平板投影装置、素子製造方法およびそれによって製造された素子
TW519574B (en) * 2000-10-20 2003-02-01 Nikon Corp Multilayer mirror and method for making the same, and EUV optical system comprising the same, and EUV microlithography system comprising the same
JP2002246229A (ja) * 2001-02-19 2002-08-30 Max Co Ltd ソレノイド駆動回路
US6710351B2 (en) * 2001-09-18 2004-03-23 Euv, Llc EUV mirror based absolute incident flux detector
US6638257B2 (en) * 2002-03-01 2003-10-28 Aga Medical Corporation Intravascular flow restrictor
KR100566152B1 (ko) * 2002-08-30 2006-03-31 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법

Also Published As

Publication number Publication date
KR100718744B1 (ko) 2007-05-15
JP2005150715A (ja) 2005-06-09
TWI294554B (en) 2008-03-11
TW200527130A (en) 2005-08-16
US20050173647A1 (en) 2005-08-11
KR20050044278A (ko) 2005-05-12
CN1619422A (zh) 2005-05-25
JP4359224B2 (ja) 2009-11-04

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