SG11202113308RA - Liquid compositions for selectively removing polysilicon over p-doped silicon and silicon-germanium during manufacture of a semiconductor device - Google Patents

Liquid compositions for selectively removing polysilicon over p-doped silicon and silicon-germanium during manufacture of a semiconductor device

Info

Publication number
SG11202113308RA
SG11202113308RA SG11202113308RA SG11202113308RA SG11202113308RA SG 11202113308R A SG11202113308R A SG 11202113308RA SG 11202113308R A SG11202113308R A SG 11202113308RA SG 11202113308R A SG11202113308R A SG 11202113308RA SG 11202113308R A SG11202113308R A SG 11202113308RA
Authority
SG
Singapore
Prior art keywords
silicon
semiconductor device
during manufacture
selectively removing
liquid compositions
Prior art date
Application number
SG11202113308RA
Other languages
English (en)
Inventor
Wen Liu
Yi-Chia Lee
Chung-Yi Chang
Aiping Wu
Laisheng Sun
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG11202113308RA publication Critical patent/SG11202113308RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
SG11202113308RA 2019-06-13 2020-06-12 Liquid compositions for selectively removing polysilicon over p-doped silicon and silicon-germanium during manufacture of a semiconductor device SG11202113308RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962861034P 2019-06-13 2019-06-13
PCT/US2020/037447 WO2020252272A1 (en) 2019-06-13 2020-06-12 Liquid compositions for selectively removing polysilicon over p-doped silicon and silicon-germanium during manufacture of a semiconductor device

Publications (1)

Publication Number Publication Date
SG11202113308RA true SG11202113308RA (en) 2021-12-30

Family

ID=73780764

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202113308RA SG11202113308RA (en) 2019-06-13 2020-06-12 Liquid compositions for selectively removing polysilicon over p-doped silicon and silicon-germanium during manufacture of a semiconductor device

Country Status (8)

Country Link
US (1) US20220298417A1 (ja)
EP (1) EP3983499A4 (ja)
JP (1) JP7527313B2 (ja)
KR (1) KR20220024514A (ja)
CN (1) CN113950520B (ja)
SG (1) SG11202113308RA (ja)
TW (1) TWI760768B (ja)
WO (1) WO2020252272A1 (ja)

Families Citing this family (8)

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KR20230058459A (ko) * 2021-01-12 2023-05-03 미쯔비시 케미컬 주식회사 에칭 조성물, 에칭 방법, 반도체 디바이스의 제조 방법 및 게이트 올 어라운드형 트랜지스터의 제조 방법
US20220290049A1 (en) * 2021-03-12 2022-09-15 LCY Chemical Corp. Composition of etchant, method for forming semiconductor device using the same, and semiconductor device
TW202342821A (zh) * 2022-02-24 2023-11-01 日商三菱瓦斯化學股份有限公司 組成物、以及使用其之半導體基板之製造方法及蝕刻方法
WO2023163878A1 (en) * 2022-02-28 2023-08-31 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
US20230407176A1 (en) * 2022-06-16 2023-12-21 Entegris, Inc. Method for etching polysilicon
WO2024076536A1 (en) 2022-10-06 2024-04-11 Basf Se Use of a composition and a process for selectively etching silicon
WO2024166976A1 (ja) * 2023-02-10 2024-08-15 三菱ケミカル株式会社 エッチング組成物、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法
CN117417747A (zh) * 2023-09-13 2024-01-19 湖北兴福电子材料股份有限公司 一种相对于硅锗的硅选择性蚀刻液

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US4490181A (en) * 1980-06-27 1984-12-25 Amchem Products, Inc. Alkaline cleaning of tin surfaces
US8092707B2 (en) * 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US6905976B2 (en) * 2003-05-06 2005-06-14 International Business Machines Corporation Structure and method of forming a notched gate field effect transistor
JP4684869B2 (ja) * 2004-11-30 2011-05-18 株式会社トクヤマ シリコンエッチング液
US7294279B2 (en) * 2005-03-17 2007-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method for releasing a micromechanical structure
JP4999800B2 (ja) * 2008-08-07 2012-08-15 株式会社トクヤマ シリコンエッチング液
EP2226374B1 (en) * 2009-03-06 2012-05-16 S.O.I. TEC Silicon Etching composition, in particular for silicon materials, method for characterizing defects of such materials and process of treating such surfaces with etching composition
JP5869368B2 (ja) * 2011-03-04 2016-02-24 富士フイルム株式会社 キャパシタ構造の形成方法及びこれに用いられるシリコンエッチング液
WO2012154498A2 (en) * 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
US9546321B2 (en) * 2011-12-28 2017-01-17 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
US10475658B2 (en) * 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
US10301580B2 (en) * 2014-12-30 2019-05-28 Versum Materials Us, Llc Stripping compositions having high WN/W etching selectivity
KR102468776B1 (ko) * 2015-09-21 2022-11-22 삼성전자주식회사 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법
US10934485B2 (en) * 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device

Also Published As

Publication number Publication date
WO2020252272A1 (en) 2020-12-17
EP3983499A1 (en) 2022-04-20
KR20220024514A (ko) 2022-03-03
JP2022536501A (ja) 2022-08-17
TW202108746A (zh) 2021-03-01
US20220298417A1 (en) 2022-09-22
TWI760768B (zh) 2022-04-11
CN113950520B (zh) 2024-03-01
CN113950520A (zh) 2022-01-18
JP7527313B2 (ja) 2024-08-02
EP3983499A4 (en) 2023-08-02

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