SG11202112885XA - Baffle implementation for improving bottom purge gas flow uniformity - Google Patents

Baffle implementation for improving bottom purge gas flow uniformity

Info

Publication number
SG11202112885XA
SG11202112885XA SG11202112885XA SG11202112885XA SG11202112885XA SG 11202112885X A SG11202112885X A SG 11202112885XA SG 11202112885X A SG11202112885X A SG 11202112885XA SG 11202112885X A SG11202112885X A SG 11202112885XA SG 11202112885X A SG11202112885X A SG 11202112885XA
Authority
SG
Singapore
Prior art keywords
baffle
implementation
gas flow
purge gas
flow uniformity
Prior art date
Application number
SG11202112885XA
Other languages
English (en)
Inventor
Nitin Pathak
Kartik Shah
Amit Kumar Bansal
Tuan Anh Nguyen
Juan Carlos Rocha
David Blahnik
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202112885XA publication Critical patent/SG11202112885XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202112885XA 2019-06-06 2020-06-02 Baffle implementation for improving bottom purge gas flow uniformity SG11202112885XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN201941022440 2019-06-06
PCT/US2020/035764 WO2020247397A1 (en) 2019-06-06 2020-06-02 Baffle implementation for improving bottom purge gas flow uniformity

Publications (1)

Publication Number Publication Date
SG11202112885XA true SG11202112885XA (en) 2021-12-30

Family

ID=73650795

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202112885XA SG11202112885XA (en) 2019-06-06 2020-06-02 Baffle implementation for improving bottom purge gas flow uniformity

Country Status (7)

Country Link
US (1) US20200388470A1 (zh)
JP (1) JP2022535430A (zh)
KR (1) KR20220027888A (zh)
CN (1) CN113906159A (zh)
SG (1) SG11202112885XA (zh)
TW (1) TW202113143A (zh)
WO (1) WO2020247397A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023034003A (ja) * 2021-08-30 2023-03-13 東京エレクトロン株式会社 基板に成膜を行う装置及び基板に成膜を行う方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100274754B1 (ko) * 1993-08-18 2000-12-15 히가시 데쓰로 성막장치 및 성막방법
JP3430277B2 (ja) * 1995-08-04 2003-07-28 東京エレクトロン株式会社 枚葉式の熱処理装置
US6013319A (en) * 1998-04-28 2000-01-11 Dietze; Gerald R. Method and apparatus for increasing deposition quality of a chemical vapor deposition system
KR100406176B1 (ko) * 2000-06-19 2003-11-19 주식회사 하이닉스반도체 샤워헤드 및 이를 이용한 액체 원료 공급 장치
US20030198754A1 (en) * 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
KR20070069122A (ko) * 2007-06-20 2007-07-02 주식회사 테스 반도체 제조 장치
JP4985183B2 (ja) * 2007-07-26 2012-07-25 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP5820143B2 (ja) * 2010-06-22 2015-11-24 株式会社ニューフレアテクノロジー 半導体製造装置、半導体製造方法及び半導体製造装置のクリーニング方法
FR3002242B1 (fr) * 2013-02-21 2015-04-03 Altatech Semiconductor Dispositif de depot chimique en phase vapeur
FR3002241B1 (fr) * 2013-02-21 2015-11-20 Altatech Semiconductor Dispositif de depot chimique en phase vapeur
CN105981140B (zh) * 2014-03-26 2018-08-31 株式会社日立国际电气 衬底处理装置以及半导体器件的制造方法
US10312076B2 (en) * 2017-03-10 2019-06-04 Applied Materials, Inc. Application of bottom purge to increase clean efficiency
JP6749295B2 (ja) * 2017-08-22 2020-09-02 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長による成膜方法、および、エピタキシャル成長装置

Also Published As

Publication number Publication date
JP2022535430A (ja) 2022-08-08
WO2020247397A1 (en) 2020-12-10
TW202113143A (zh) 2021-04-01
CN113906159A (zh) 2022-01-07
US20200388470A1 (en) 2020-12-10
KR20220027888A (ko) 2022-03-08

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