SG11202112557VA - Process chamber with reduced plasma arc - Google Patents

Process chamber with reduced plasma arc

Info

Publication number
SG11202112557VA
SG11202112557VA SG11202112557VA SG11202112557VA SG11202112557VA SG 11202112557V A SG11202112557V A SG 11202112557VA SG 11202112557V A SG11202112557V A SG 11202112557VA SG 11202112557V A SG11202112557V A SG 11202112557VA SG 11202112557V A SG11202112557V A SG 11202112557VA
Authority
SG
Singapore
Prior art keywords
process chamber
plasma arc
reduced plasma
reduced
arc
Prior art date
Application number
SG11202112557VA
Other languages
English (en)
Inventor
Fei Wu
Abdul Aziz Khaja
Sungwon Ha
Vinay K Prabhakar
Ganesh Balasubramanian
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202112557VA publication Critical patent/SG11202112557VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202112557VA 2019-05-15 2020-04-23 Process chamber with reduced plasma arc SG11202112557VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962848281P 2019-05-15 2019-05-15
PCT/US2020/029545 WO2020231615A1 (en) 2019-05-15 2020-04-23 Process chamber with reduced plasma arc

Publications (1)

Publication Number Publication Date
SG11202112557VA true SG11202112557VA (en) 2021-12-30

Family

ID=73228158

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202112557VA SG11202112557VA (en) 2019-05-15 2020-04-23 Process chamber with reduced plasma arc

Country Status (6)

Country Link
US (1) US11875969B2 (zh)
KR (1) KR20220018978A (zh)
CN (1) CN114175207A (zh)
SG (1) SG11202112557VA (zh)
TW (1) TW202101506A (zh)
WO (1) WO2020231615A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115341198B (zh) * 2022-07-05 2023-08-04 湖南红太阳光电科技有限公司 一种平板式pecvd设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100460143B1 (ko) 2002-08-02 2004-12-03 삼성전자주식회사 반도체 제조설비용 프로세스 챔버
US20070227663A1 (en) * 2006-03-28 2007-10-04 Tokyo Electron Limited Substrate processing apparatus and side wall component
JP4838736B2 (ja) * 2007-01-25 2011-12-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2010524225A (ja) * 2007-04-02 2010-07-15 ソースル シーオー エルティディー 基板支持装置及びこれを備えるプラズマエッチング装置
JP2013526778A (ja) 2010-05-12 2013-06-24 アプライド マテリアルズ インコーポレイテッド 限定プロセス容積ｐｅｃｖｄチャンバ
WO2012046706A1 (ja) * 2010-10-06 2012-04-12 株式会社アルバック 誘電体薄膜の成膜方法
WO2014149259A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Apparatus and method for tuning a plasma profile using a tuning ring in a processing chamber
KR102306695B1 (ko) 2014-03-14 2021-09-28 어플라이드 머티어리얼스, 인코포레이티드 스마트 챔버 및 스마트 챔버 컴포넌트들

Also Published As

Publication number Publication date
JP2022533615A (ja) 2022-07-25
WO2020231615A1 (en) 2020-11-19
KR20220018978A (ko) 2022-02-15
TW202101506A (zh) 2021-01-01
CN114175207A (zh) 2022-03-11
US11875969B2 (en) 2024-01-16
US20200365370A1 (en) 2020-11-19

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