SG11202111070YA - Polycrystalline silicon material - Google Patents

Polycrystalline silicon material

Info

Publication number
SG11202111070YA
SG11202111070YA SG11202111070YA SG11202111070YA SG11202111070YA SG 11202111070Y A SG11202111070Y A SG 11202111070YA SG 11202111070Y A SG11202111070Y A SG 11202111070YA SG 11202111070Y A SG11202111070Y A SG 11202111070YA SG 11202111070Y A SG11202111070Y A SG 11202111070YA
Authority
SG
Singapore
Prior art keywords
polycrystalline silicon
silicon material
polycrystalline
silicon
Prior art date
Application number
SG11202111070YA
Other languages
English (en)
Inventor
Takuya Asano
Kouichi Saiki
Miki Emoto
Tooru ONODA
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11202111070YA publication Critical patent/SG11202111070YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
SG11202111070YA 2019-04-05 2020-04-02 Polycrystalline silicon material SG11202111070YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019073019 2019-04-05
PCT/JP2020/015224 WO2020204141A1 (ja) 2019-04-05 2020-04-02 多結晶シリコン原料

Publications (1)

Publication Number Publication Date
SG11202111070YA true SG11202111070YA (en) 2021-11-29

Family

ID=72668138

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202111070YA SG11202111070YA (en) 2019-04-05 2020-04-02 Polycrystalline silicon material

Country Status (8)

Country Link
US (1) US20220204349A1 (ko)
EP (1) EP3936641A4 (ko)
JP (1) JPWO2020204141A1 (ko)
KR (1) KR20210149714A (ko)
CN (1) CN113661277A (ko)
SG (1) SG11202111070YA (ko)
TW (1) TW202100462A (ko)
WO (1) WO2020204141A1 (ko)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004250317A (ja) 2002-12-24 2004-09-09 Tokuyama Corp クロロシラン類の精製方法
JP4908730B2 (ja) * 2003-04-21 2012-04-04 株式会社Ｓｕｍｃｏ 高抵抗シリコン単結晶の製造方法
JP2005067979A (ja) 2003-08-27 2005-03-17 Tokuyama Corp クロロシラン類の精製方法
JP2005172512A (ja) 2003-12-09 2005-06-30 Toshiba Corp 不純物分析方法、不純物分析ガス採取装置、不純物ガス分析装置及び半導体装置の製造方法
JP5542026B2 (ja) 2010-10-27 2014-07-09 信越化学工業株式会社 クロロシラン類の精製方法
DE102011089479A1 (de) 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristallines Silicium
DE102012200992A1 (de) * 2012-01-24 2013-07-25 Wacker Chemie Ag Dotierstoffarmes polykristallines Siliciumstück
JP5915565B2 (ja) * 2013-02-18 2016-05-11 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウェーハの製造方法
JP6387811B2 (ja) * 2014-12-02 2018-09-12 株式会社Sumco シリコン単結晶の育成方法
KR101674819B1 (ko) * 2015-08-12 2016-11-09 주식회사 엘지실트론 단결정 성장 방법
JP6472732B2 (ja) 2015-09-15 2019-02-20 信越化学工業株式会社 樹脂材料、ビニール製袋、多結晶シリコン棒、多結晶シリコン塊
JP6447439B2 (ja) 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
CN105970284B (zh) * 2016-05-30 2019-08-16 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法
KR102303581B1 (ko) * 2016-06-23 2021-09-16 미쓰비시 마테리알 가부시키가이샤 다결정 실리콘 로드 및 그 제조 방법
JP2018090466A (ja) 2016-12-07 2018-06-14 信越半導体株式会社 シリコン単結晶の製造方法
JP6662280B2 (ja) * 2016-12-14 2020-03-11 株式会社Sumco シリコン原料の融解方法

Also Published As

Publication number Publication date
CN113661277A (zh) 2021-11-16
KR20210149714A (ko) 2021-12-09
EP3936641A4 (en) 2022-09-14
JPWO2020204141A1 (ko) 2020-10-08
US20220204349A1 (en) 2022-06-30
TW202100462A (zh) 2021-01-01
WO2020204141A1 (ja) 2020-10-08
EP3936641A1 (en) 2022-01-12

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