SG11202110566PA - Showerhead shroud - Google Patents
Showerhead shroudInfo
- Publication number
- SG11202110566PA SG11202110566PA SG11202110566PA SG11202110566PA SG11202110566PA SG 11202110566P A SG11202110566P A SG 11202110566PA SG 11202110566P A SG11202110566P A SG 11202110566PA SG 11202110566P A SG11202110566P A SG 11202110566PA SG 11202110566P A SG11202110566P A SG 11202110566PA
- Authority
- SG
- Singapore
- Prior art keywords
- showerhead
- shroud
- showerhead shroud
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/0049—Casings being metallic containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0266—Shields electromagnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Glass Compositions (AREA)
- Massaging Devices (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Vehicle Body Suspensions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962825344P | 2019-03-28 | 2019-03-28 | |
PCT/US2020/024549 WO2020198267A1 (en) | 2019-03-28 | 2020-03-25 | Showerhead shroud |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202110566PA true SG11202110566PA (en) | 2021-10-28 |
Family
ID=72611750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202110566PA SG11202110566PA (en) | 2019-03-28 | 2020-03-25 | Showerhead shroud |
Country Status (6)
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102445935B1 (ko) * | 2019-03-28 | 2022-09-20 | 램 리써치 코포레이션 | 샤워헤드 슈라우드 |
CN119054061A (zh) * | 2022-04-22 | 2024-11-29 | 朗姆研究公司 | 热保护件 |
WO2024097853A1 (en) * | 2022-11-03 | 2024-05-10 | Lam Research Corporation | Segregated reactant delivery using showerhead and shroud |
US20250022688A1 (en) * | 2023-07-11 | 2025-01-16 | Tokyo Electron Limited | Plasma processing method and apparatus |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2488710A (en) * | 1946-09-23 | 1949-11-22 | Allegheny Ludlum Steel | Enclosing shield for electrical applications |
US4806703A (en) * | 1988-01-11 | 1989-02-21 | The Curran Company | Panel system for EMI shielded enclosures |
US4831211A (en) * | 1988-06-08 | 1989-05-16 | Rockwell International Corporation | EMI/RFI sealed microphonics isolation apparatus and methods |
JP3342189B2 (ja) * | 1994-08-18 | 2002-11-05 | 富士通株式会社 | 電子装置の筐体構造 |
DE59605897D1 (de) * | 1995-02-14 | 2000-10-26 | Knuerr Mechanik Ag | Rahmenkonstruktion für Gestelle und Gehäuse von Baugruppenträgern und Schränken zur Aufnahme von elektrischen und/oder elektronischen Bauteilen |
US6193802B1 (en) * | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment |
US5661640A (en) * | 1996-01-05 | 1997-08-26 | Dell Usa, L.P. | Computer chassis having a size-adjustable, TEM-shielded circuit board support plate structure therein |
JPH1156248A (ja) * | 1997-06-09 | 1999-03-02 | Ajinomoto Co Inc | 油糧種子から高濃度油脂含有物と未変性タンパク質を分離、製造する方法 |
JPH11312886A (ja) * | 1998-04-28 | 1999-11-09 | Mitsubishi Electric Corp | 通信機器装置の筐体構造 |
JP4064540B2 (ja) | 1998-08-11 | 2008-03-19 | 株式会社日立国際電気 | プラズマcvd処理装置 |
JP3863352B2 (ja) | 2000-06-26 | 2006-12-27 | テクトロニクス・インターナショナル・セールス・ゲーエムベーハー | 電子機器筐体 |
JP2009260377A (ja) | 2001-12-25 | 2009-11-05 | Tokyo Electron Ltd | 成膜方法及び処理装置 |
US9345183B2 (en) * | 2005-03-15 | 2016-05-17 | Stealthdrive Canada Corp. | EMI-shielding solutions for electronics enclosures using opposing three-dimensional shapes and channels formed in sheet metal |
AU2007284072B2 (en) * | 2006-08-15 | 2011-01-20 | Scott Hope | A cage frame |
US9184072B2 (en) | 2007-07-27 | 2015-11-10 | Mattson Technology, Inc. | Advanced multi-workpiece processing chamber |
US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
US20090095218A1 (en) * | 2007-10-16 | 2009-04-16 | Novellus Systems, Inc. | Temperature controlled showerhead |
US8137467B2 (en) * | 2007-10-16 | 2012-03-20 | Novellus Systems, Inc. | Temperature controlled showerhead |
KR200454281Y1 (ko) * | 2007-10-16 | 2011-06-23 | 노벨러스 시스템즈, 인코포레이티드 | 온도 제어 샤워헤드 |
WO2011041332A2 (en) * | 2009-09-29 | 2011-04-07 | Applied Materials, Inc. | Off-center ground return for rf-powered showerhead |
CN103403843B (zh) | 2011-03-04 | 2016-12-14 | 诺发系统公司 | 混合型陶瓷喷淋头 |
US9293353B2 (en) * | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
CN102802386B (zh) * | 2011-05-25 | 2016-04-20 | 莱尔德电子材料(深圳)有限公司 | 电磁干扰屏蔽组件 |
US9947512B2 (en) * | 2011-10-25 | 2018-04-17 | Lam Research Corporation | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
US8780004B1 (en) * | 2012-01-31 | 2014-07-15 | Western Digital Technologies, Inc. | Dual configuration enclosure with optional shielding |
US8987872B2 (en) * | 2013-03-11 | 2015-03-24 | Qualcomm Incorporated | Electromagnetic interference enclosure for radio frequency multi-chip integrated circuit packages |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9758349B2 (en) * | 2013-08-09 | 2017-09-12 | Man-D-Tec, Inc. | Elevator ventilation fan assembly |
US20150129131A1 (en) * | 2013-11-14 | 2015-05-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processing apparatus and pre-clean system |
US20150185792A1 (en) * | 2013-12-26 | 2015-07-02 | Shih-Wun Li | DUAL-layer SYSTEM COMPUTER ENCLOSURE |
US10081869B2 (en) * | 2014-06-10 | 2018-09-25 | Lam Research Corporation | Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates |
US10047438B2 (en) * | 2014-06-10 | 2018-08-14 | Lam Research Corporation | Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas |
WO2017004050A1 (en) * | 2015-06-29 | 2017-01-05 | Applied Materials, Inc. | Temperature controlled substrate processing |
US10879041B2 (en) * | 2015-09-04 | 2020-12-29 | Applied Materials, Inc. | Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers |
US10373794B2 (en) * | 2015-10-29 | 2019-08-06 | Lam Research Corporation | Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber |
US20170194174A1 (en) * | 2015-12-30 | 2017-07-06 | Applied Materials, Inc. | Quad chamber and platform having multiple quad chambers |
US9773643B1 (en) * | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
JP2018014406A (ja) * | 2016-07-21 | 2018-01-25 | 富士通株式会社 | 筐体及び電子機器 |
WO2018026731A1 (en) * | 2016-08-01 | 2018-02-08 | Applied Materials, Inc. | Large-area vhf pecvd chamber for low-damage and high-throughput plasma processing |
KR102330098B1 (ko) * | 2017-04-24 | 2021-11-23 | 주성엔지니어링(주) | 기판 처리 장치 |
KR102445935B1 (ko) | 2019-03-28 | 2022-09-20 | 램 리써치 코포레이션 | 샤워헤드 슈라우드 |
-
2020
- 2020-03-25 KR KR1020217034994A patent/KR102445935B1/ko active Active
- 2020-03-25 JP JP2021557604A patent/JP7547362B2/ja active Active
- 2020-03-25 CN CN202080025678.9A patent/CN113646466A/zh active Pending
- 2020-03-25 KR KR1020227032315A patent/KR20220132047A/ko not_active Ceased
- 2020-03-25 US US17/598,433 patent/US20220093372A1/en active Pending
- 2020-03-25 WO PCT/US2020/024549 patent/WO2020198267A1/en active IP Right Grant
- 2020-03-25 CN CN202310180191.3A patent/CN116334588A/zh active Pending
- 2020-03-25 SG SG11202110566PA patent/SG11202110566PA/en unknown
-
2021
- 2021-12-10 US US17/643,718 patent/US11488810B2/en active Active
-
2024
- 2024-08-28 JP JP2024146066A patent/JP2024167308A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20220132047A (ko) | 2022-09-29 |
WO2020198267A1 (en) | 2020-10-01 |
US11488810B2 (en) | 2022-11-01 |
US20220110230A1 (en) | 2022-04-07 |
JP7547362B2 (ja) | 2024-09-09 |
JP2024167308A (ja) | 2024-12-03 |
KR20210134427A (ko) | 2021-11-09 |
TW202104656A (zh) | 2021-02-01 |
CN116334588A (zh) | 2023-06-27 |
JP2022523262A (ja) | 2022-04-21 |
CN113646466A (zh) | 2021-11-12 |
KR102445935B1 (ko) | 2022-09-20 |
US20220093372A1 (en) | 2022-03-24 |
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