Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/185—Joining of semiconductor bodies for junction formation
  • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Pressure Welding/Diffusion-Bonding (AREA)
• Recrystallisation Techniques (AREA)
• Element Separation (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=67742638

Family Applications (1)

Country Status (9)

Families Citing this family (1)

Family Cites Families (12)

• 2019
  • 2019-03-29 FR FR1903387A patent/FR3094563A1/fr active Pending
• 2020
  • 2020-03-26 JP JP2021557505A patent/JP7535058B2/ja active Active
  • 2020-03-26 EP EP20713004.8A patent/EP3948941B1/fr active Active
  • 2020-03-26 CN CN202080021426.9A patent/CN113597668B/zh active Active
  • 2020-03-26 KR KR1020217035050A patent/KR20210139456A/ko active Search and Examination
  • 2020-03-26 TW TW109110307A patent/TWI828893B/zh active
  • 2020-03-26 SG SG11202109934R patent/SG11202109934RA/en unknown
  • 2020-03-26 WO PCT/EP2020/058529 patent/WO2020201003A1/fr unknown
  • 2020-03-26 US US17/435,017 patent/US20220139768A1/en active Pending

Also Published As

Similar Documents