FR2894067B1 - Procede de collage par adhesion moleculaire - Google Patents

Procede de collage par adhesion moleculaire

Info

Publication number
FR2894067B1
FR2894067B1 FR0512008A FR0512008A FR2894067B1 FR 2894067 B1 FR2894067 B1 FR 2894067B1 FR 0512008 A FR0512008 A FR 0512008A FR 0512008 A FR0512008 A FR 0512008A FR 2894067 B1 FR2894067 B1 FR 2894067B1
Authority
FR
France
Prior art keywords
bonding
molecular adhesion
adhesion
molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0512008A
Other languages
English (en)
Other versions
FR2894067A1 (fr
Inventor
Sebastien Kerdiles
Frederic Metral
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0512008A priority Critical patent/FR2894067B1/fr
Priority to US11/357,771 priority patent/US7601271B2/en
Priority to EP06819601.3A priority patent/EP1964166B1/fr
Priority to CN2006800443126A priority patent/CN101317258B/zh
Priority to JP2008541715A priority patent/JP5079706B2/ja
Priority to KR1020087012379A priority patent/KR101041015B1/ko
Priority to PCT/EP2006/068647 priority patent/WO2007060145A1/fr
Priority to TW095143196A priority patent/TWI358084B/zh
Publication of FR2894067A1 publication Critical patent/FR2894067A1/fr
Application granted granted Critical
Publication of FR2894067B1 publication Critical patent/FR2894067B1/fr
Priority to US12/489,800 priority patent/US8091601B2/en
Priority to US12/490,132 priority patent/US8158013B2/en
Priority to JP2012161929A priority patent/JP5663535B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
FR0512008A 2005-11-28 2005-11-28 Procede de collage par adhesion moleculaire Active FR2894067B1 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FR0512008A FR2894067B1 (fr) 2005-11-28 2005-11-28 Procede de collage par adhesion moleculaire
US11/357,771 US7601271B2 (en) 2005-11-28 2006-02-17 Process and equipment for bonding by molecular adhesion
PCT/EP2006/068647 WO2007060145A1 (fr) 2005-11-28 2006-11-20 Procede et equipement de liaison par adherence moleculaire
CN2006800443126A CN101317258B (zh) 2005-11-28 2006-11-20 通过分子黏附进行键合的方法和设备
JP2008541715A JP5079706B2 (ja) 2005-11-28 2006-11-20 分子接合による結合のためのプロセスおよび装置
KR1020087012379A KR101041015B1 (ko) 2005-11-28 2006-11-20 분자 접착에 의한 결합 방법 및 장치
EP06819601.3A EP1964166B1 (fr) 2005-11-28 2006-11-20 Procede de liaison par adherence moleculaire
TW095143196A TWI358084B (en) 2005-11-28 2006-11-22 Process and equipment for bonding by molecular adh
US12/489,800 US8091601B2 (en) 2005-11-28 2009-06-23 Equipment for bonding by molecular adhesion
US12/490,132 US8158013B2 (en) 2005-11-28 2009-06-23 Process for bonding by molecular adhesion
JP2012161929A JP5663535B2 (ja) 2005-11-28 2012-07-20 分子接合による結合のためのプロセスおよび装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0512008A FR2894067B1 (fr) 2005-11-28 2005-11-28 Procede de collage par adhesion moleculaire

Publications (2)

Publication Number Publication Date
FR2894067A1 FR2894067A1 (fr) 2007-06-01
FR2894067B1 true FR2894067B1 (fr) 2008-02-15

Family

ID=36716597

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0512008A Active FR2894067B1 (fr) 2005-11-28 2005-11-28 Procede de collage par adhesion moleculaire

Country Status (1)

Country Link
FR (1) FR2894067B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3036845B1 (fr) * 2015-05-28 2017-05-26 Soitec Silicon On Insulator Procede de transfert d'une couche d'un substrat monocristallin
FR3094563A1 (fr) * 2019-03-29 2020-10-02 Soitec Procede de fabrication d’un substrat de type semi-conducteur sur isolant

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3385972B2 (ja) * 1998-07-10 2003-03-10 信越半導体株式会社 貼り合わせウェーハの製造方法および貼り合わせウェーハ
FR2835096B1 (fr) * 2002-01-22 2005-02-18 Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin
FR2823599B1 (fr) * 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
FR2868599B1 (fr) * 2004-03-30 2006-07-07 Soitec Silicon On Insulator Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur

Also Published As

Publication number Publication date
FR2894067A1 (fr) 2007-06-01

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